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Results:
1-18
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Results: 18
Authors:
Karpovich, IA
Gorshkov, AP
Levichev, SB
Morozov, SV
Zvonkov, BN
Filatov, DO
Citation: Ia. Karpovich et al., Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a Semiconductor/Electrolyte system, SEMICONDUCT, 35(5), 2001, pp. 543-549
Authors:
Zvonkov, BN
Karpovich, IA
Baidus', NV
Filatov, DO
Morozov, SV
Citation: Bn. Zvonkov et al., Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition, SEMICONDUCT, 35(1), 2001, pp. 93-98
Authors:
Zvonkov, BN
Zinov'ev, KE
Nurligareev, DK
Salakhutdinov, IF
Svetikov, VV
Sychugov, VA
Citation: Bn. Zvonkov et al., Tunable wide-aperture semiconductor laser with an external waveguide-grating mirror, QUANTUM EL, 31(1), 2001, pp. 35-38
Authors:
Kul'bachinskii, VA
Lunin, RA
Kytin, VG
Golikov, AV
Demin, AV
Rogozin, VA
Zvonkov, BN
Nekorkin, SM
Filatov, DO
Citation: Va. Kul'Bachinskii et al., Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures, J EXP TH PH, 93(4), 2001, pp. 815-823
Authors:
Baidus, NV
Salakhutdinov, IF
Hoekstra, HJWM
Zvonkov, BN
Nekorkin, SM
Sychugov, VA
Citation: Nv. Baidus et al., A compact tunable narrow-band LD based on emission through the substrate and an external abnormal-reflection mirror, IEEE PHOTON, 13(11), 2001, pp. 1155-1157
Authors:
Shastin, VN
Zvonkov, BN
Zhukavin, RK
Orlova, EE
Pavlov, SG
Citation: Vn. Shastin et al., Population inversion and THz amplification based on the optically pumped coulomb centers in MQW, IAN FIZ, 65(2), 2001, pp. 246-248
Authors:
Karpovich, IA
Baidus, NV
Zvonkov, BN
Filatov, DO
Levichev, SB
Zdoroveishev, AV
Perevoshikov, VA
Citation: Ia. Karpovich et al., Investigation of the buried InAs/GaAs quantum dots by atomic force microscopy combined with selective chemical etching, PHYS LOW-D, 3-4, 2001, pp. 341-348
Authors:
Minkov, GM
Germanenko, AV
Rut, OE
Sherstobitov, AA
Zvonkov, BN
Uskova, EA
Birukov, AA
Citation: Gm. Minkov et al., Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures - art. no. 193309, PHYS REV B, 6419(19), 2001, pp. 3309
Authors:
Aleshkin, VY
Gaponova, DM
Gavrilenko, VI
Krasil'nik, ZF
Revin, DG
Zvonkov, BN
Uskova, EA
Citation: Vy. Aleshkin et al., Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field, SEMICONDUCT, 34(9), 2000, pp. 1073-1078
Authors:
Zvonkov, BN
Karpovich, IA
Baidus, NV
Filatov, DO
Morozov, SV
Gushina, YY
Citation: Bn. Zvonkov et al., Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs, NANOTECHNOL, 11(4), 2000, pp. 221-226
Authors:
Aleshkin, VY
Andronov, AA
Antonov, AV
Gaponova, DM
Gavrilenko, VI
Revin, DG
Zvonkov, BN
Uskova, EA
Citation: Vy. Aleshkin et al., Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells, IAN FIZ, 64(2), 2000, pp. 302-307
Authors:
Karpovich, IA
Filatov, DO
Morozov, SV
Baidus, NV
Zvonkov, BN
Gushina, JJ
Citation: Ia. Karpovich et al., On relation of the photo-electric sensitivity and photoluminescence spectra to the geometrical parameters of the quantum dot layer in the InAs/GaAs heterostructures, IAN FIZ, 64(2), 2000, pp. 313-319
Authors:
Kul'bachinskii, VA
Kytin, VG
Lunin, RA
Golikov, AV
Malkina, IG
Zvonkov, BN
Saf'yanov, YN
Citation: Va. Kul'Bachinskii et al., Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots, SEMICONDUCT, 33(3), 1999, pp. 318-322
Authors:
Aleshkin, VY
Bekin, NA
Buyanova, MN
Murel', AV
Zvonkov, BN
Citation: Vy. Aleshkin et al., Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method, SEMICONDUCT, 33(10), 1999, pp. 1133-1138
Authors:
Zvonkov, NB
Akhlestina, SA
Ershov, AV
Zvonkov, BN
Maksimov, GA
Uskova, EA
Citation: Nb. Zvonkov et al., Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm, QUANTUM EL, 29(3), 1999, pp. 217-218
Authors:
Aleshkin, VY
Andronov, AA
Antonov, AV
Demidov, EV
Gavrilenko, VI
Revin, DG
Zvonkov, BN
Zvonkov, NB
Uskova, EA
Citation: Vy. Aleshkin et al., Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing, PHYSICA B, 272(1-4), 1999, pp. 139-142
Authors:
Kulbachinskii, VA
Kytin, VG
Lunin, RA
Golikov, AV
Malkina, IG
Zvonkov, BN
Safyanov, YN
Citation: Va. Kulbachinskii et al., Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots, PHYSICA B, 266(3), 1999, pp. 185-191
Authors:
Aleshkin, VY
Zvonkov, BN
Malkina, IG
Chernov, AL
Romanov, YA
Citation: Vy. Aleshkin et al., The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures, PHYS LOW-D, 12, 1999, pp. 15-21
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