Authors:
Zymierska, D
Auleytner, J
Godwod, K
Domagala, J
Datsenko, L
Choinski, J
Citation: D. Zymierska et al., X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions, J ALLOY COM, 328(1-2), 2001, pp. 237-241
Authors:
Klinger, D
Lefeld-Sosnowska, M
Auleytner, J
Zymierska, D
Nowicki, L
Stonert, A
Kwiatkowski, S
Citation: D. Klinger et al., Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal, J ALLOY COM, 328(1-2), 2001, pp. 242-247
Authors:
Dmitruk, I
Dmitruk, N
Domagala, J
Klinger, D
Zymierska, D
Auleytner, J
Citation: I. Dmitruk et al., X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching, J ALLOY COM, 286(1-2), 1999, pp. 289-296
Authors:
Dmitruk, I
Mikhailik, T
Zymierska, D
Auleytner, J
Citation: I. Dmitruk et al., Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering, J ALLOY COM, 286(1-2), 1999, pp. 302-308
Authors:
Datsenko, L
Zymierska, D
Auleytner, J
Klinger, D
Machulin, V
Klad'ko, V
Melnik, V
Prokopenko, I
Czosnyka, T
Choinski, J
Citation: L. Datsenko et al., Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions, ACT PHY P A, 96(1), 1999, pp. 137-142
Authors:
Klinger, D
Lefeld-Sosnowska, M
Zymierska, D
Auleytner, J
Kozankiewicz, B
Reginski, K
Citation: D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Authors:
Zymierska, D
Klinger, D
Auleytner, J
Czosnyka, T
Datsenko, L
Citation: D. Zymierska et al., Studies of the near-surface layers of silicon crystals implanted with fastions, NUCL INST B, 146(1-4), 1998, pp. 350-355