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Results: 1-9 |
Results: 9
Structural changes induced by fast nitrogen ions in GaAs single crystals
Authors: Zymierska, D Auleytner, J Choinski, J Perchuc, L Godwod, K Domagala, J Adamczewska, J Paszkowicz, W Reginski, K
Citation: D. Zymierska et al., Structural changes induced by fast nitrogen ions in GaAs single crystals, J ALLOY COM, 328(1-2), 2001, pp. 112-118
X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions
Authors: Zymierska, D Auleytner, J Godwod, K Domagala, J Datsenko, L Choinski, J
Citation: D. Zymierska et al., X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions, J ALLOY COM, 328(1-2), 2001, pp. 237-241
Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal
Authors: Klinger, D Lefeld-Sosnowska, M Auleytner, J Zymierska, D Nowicki, L Stonert, A Kwiatkowski, S
Citation: D. Klinger et al., Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal, J ALLOY COM, 328(1-2), 2001, pp. 242-247
Comparative study of the surface roughness by AFM and GIXR
Authors: Zymierska, D Auleytner, J Kobiela, T Dus, R
Citation: D. Zymierska et al., Comparative study of the surface roughness by AFM and GIXR, PHYS ST S-A, 180(2), 2000, pp. 479-485
X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching
Authors: Dmitruk, I Dmitruk, N Domagala, J Klinger, D Zymierska, D Auleytner, J
Citation: I. Dmitruk et al., X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching, J ALLOY COM, 286(1-2), 1999, pp. 289-296
Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering
Authors: Dmitruk, I Mikhailik, T Zymierska, D Auleytner, J
Citation: I. Dmitruk et al., Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering, J ALLOY COM, 286(1-2), 1999, pp. 302-308
Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions
Authors: Datsenko, L Zymierska, D Auleytner, J Klinger, D Machulin, V Klad'ko, V Melnik, V Prokopenko, I Czosnyka, T Choinski, J
Citation: L. Datsenko et al., Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions, ACT PHY P A, 96(1), 1999, pp. 137-142
Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals
Authors: Klinger, D Lefeld-Sosnowska, M Zymierska, D Auleytner, J Kozankiewicz, B Reginski, K
Citation: D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Studies of the near-surface layers of silicon crystals implanted with fastions
Authors: Zymierska, D Klinger, D Auleytner, J Czosnyka, T Datsenko, L
Citation: D. Zymierska et al., Studies of the near-surface layers of silicon crystals implanted with fastions, NUCL INST B, 146(1-4), 1998, pp. 350-355
Risultati: 1-9 |