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Results: 51-75/1514
Authors:
BIEFELD RM
ALLERMAN AA
BAUCOM KC
Citation: Rm. Biefeld et al., THE GROWTH OF ALINSB BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 27(6), 1998, pp. 43-46
Authors:
AMIRTHARAJ PM
BHAT IB
Citation: Pm. Amirtharaj et Ib. Bhat, 1997 US WORKSHOP ON THE PHYSICS AND CHEMISTRY OF II-VI MATERIALS - FOREWORD, Journal of electronic materials, 27(6), 1998, pp. 489-489
Authors:
SPICER WE
Citation: We. Spicer, THE ORGANIZATION OF THE MCT WORKSHOP - AN INNOVATIVE APPROACH TO UNIVERSITIES, INDUSTRY, AND GOVERNMENT WORKING TOGETHER, Journal of electronic materials, 27(6), 1998, pp. 490-493
Authors:
JENSEN JE
ROTH JA
BREWER PD
OLSON GL
DUBRAY JJ
WU OK
RAJAVEL RD
DELYON TJ
Citation: Je. Jensen et al., INTEGRATED MULTISENSOR CONTROL OF II-VI MBE FOR GROWTH OF COMPLEX IR DETECTOR STRUCTURES, Journal of electronic materials, 27(6), 1998, pp. 494-499
Authors:
ALMEIDA LA
JOHNSON JN
BENSON JD
DINAN JH
JOHS B
Citation: La. Almeida et al., AUTOMATED COMPOSITIONAL CONTROL OF HG1-XCDXTE DURING MBE, USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of electronic materials, 27(6), 1998, pp. 500-503
Authors:
VYDYANATH HR
AQARIDEN F
WIJEWARNASURIYA PS
SIVANATHAN S
CHAMBERS G
BECKER L
Citation: Hr. Vydyanath et al., ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 504-506
Authors:
VYDYANATH HR
AQARIDEN F
WIJEWARNASURIYA PS
SIVANANTHAN S
NATHAN V
Citation: Hr. Vydyanath et al., OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 507-509
Authors:
MITRA P
CASE FC
REINE MB
Citation: P. Mitra et al., PROGRESS IN MOVPE OF HGCDTE FOR ADVANCED INFRARED DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 510-520
Authors:
DAKSHINAMURTHY S
BHAT I
Citation: S. Dakshinamurthy et I. Bhat, MONITORING OF CDTE ATOMIC LAYER EPITAXY USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of electronic materials, 27(6), 1998, pp. 521-526
Authors:
YASUDA K
KOJIMA K
MORI K
KUBOTA Y
NIMURA T
INUKAI F
ASAI Y
Citation: K. Yasuda et al., ELECTRICAL AND OPTICAL-PROPERTIES OF IODINE-DOPED CDZNTE LAYERS GROWNBY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(6), 1998, pp. 527-531
Authors:
GOSCHENHOFER F
GERSCHUTZ J
PFEUFFERJESCHKE A
HELLMIG R
BECKER CR
LANDWEHR G
Citation: F. Goschenhofer et al., INVESTIGATION OF IODINE AS A DONOR IN MBE GROWN HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 532-535
Authors:
LANGE MD
STORM DF
COLE T
Citation: Md. Lange et al., MOLECULAR-BEAM EPITAXY OF INTLAS, Journal of electronic materials, 27(6), 1998, pp. 536-541
Authors:
ZANATTA JP
FERRET P
THERET G
MILLION A
WOLNY M
CHAMONAL JP
DESTEFANIS G
Citation: Jp. Zanatta et al., HETEROEPITAXY OF HGCDTE (211)B ON GE SUBSTRATES BY MOLECULAR-BEAM EPITAXY FOR INFRARED DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 542-545
Authors:
WIJEWARNASURIYA PS
ZANDIAN M
EDWALL DD
MCLEVIGE WV
CHEN CA
PASKO JG
HILDEBRANDT G
CHEN AC
ARIAS JM
DSOUZA AI
RUJIRAWAT S
SIVANATHAN S
Citation: Ps. Wijewarnasuriya et al., MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 546-549
Authors:
DELYON TJ
RAJAVEL RD
VIGIL JA
JENSEN JE
WU OK
COCKRUM CA
JOHNSON SM
VENZOR GM
BAILEY SL
KASAI I
AHLGREN WL
SMITH MS
Citation: Tj. Delyon et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE INFRARED FOCAL-PLANE ARRAYSON SILICON SUBSTRATES FOR MIDWAVE INFRARED APPLICATIONS, Journal of electronic materials, 27(6), 1998, pp. 550-555
Authors:
RAGHOTHAMACHAR B
CHUNG H
DUDLEY M
LARSON DJ
Citation: B. Raghothamachar et al., EFFECT OF CONSTRAINED GROWTH ON DEFECT STRUCTURES IN MICROGRAVITY GROWN ON CDZNTE BOULES, Journal of electronic materials, 27(6), 1998, pp. 556-563
Authors:
PRICE SL
HETTICH HL
SEN S
CURRIE MC
RHIGER DR
MCLEAN EO
Citation: Sl. Price et al., PROGRESS IN CDZNTE SUBSTRATE PRODUCIBILITY AND CRITICAL DRIVERS OF IRFPA YIELD ORIGINATING WITH CDZNTE SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 564-572
Authors:
BERDING MA
SHER A
VANSCHILFGAARDE M
Citation: Ma. Berding et al., LITHIUM, SODIUM, AND COPPER IN HG0.78CD0.22TE AND CDTE-BASED SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 573-578
Authors:
TANAKA N
OZAKI K
NISHINO H
EBE H
MIYAMOTO Y
Citation: N. Tanaka et al., ELECTRICAL-PROPERTIES OF HGCDTE EPILAYERS DOPED WITH SILVER USING AN AGNO3 SOLUTION, Journal of electronic materials, 27(6), 1998, pp. 579-582
Authors:
WILLIAMS BL
ROBINSON HG
HELMS CR
Citation: Bl. Williams et al., MERCURY INTERSTITIAL GENERATION IN ION-IMPLANTED MERCURY CADMIUM TELLURIDE, Journal of electronic materials, 27(6), 1998, pp. 583-588
Authors:
ROBINSON H
Citation: H. Robinson, PROCESS MODELING OF HGCDTE INFRARED PHOTODETECTORS, Journal of electronic materials, 27(6), 1998, pp. 589-594
Authors:
CHEN AC
ZANDIAN M
EDWALL DD
DEWAMES RE
WIJEWARNASURIYA PS
ARIAS JM
SIVANANTHAN S
BERDING M
SHER A
Citation: Ac. Chen et al., MBE GROWTH AND CHARACTERIZATION OF IN-SITU ARSENIC DOPED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 595-599
Authors:
ZHANG LH
PEARSON SD
TONG W
WAGNER BK
BENSON JD
SUMMERS CJ
Citation: Lh. Zhang et al., P-TYPE AS-DOPING OF HG1-XCDXTE GROWN BY MOMBE, Journal of electronic materials, 27(6), 1998, pp. 600-604
Authors:
BERDING MA
SHER A
VANSCHILFGAARDE M
CHEN AC
ARIAS J
Citation: Ma. Berding et al., MODELING OF ARSENIC ACTIVATION IN HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 605-609
Authors:
HOONNIVATHANA E
JONES ED
VINEY IVF
DUCKERS LJ
Citation: E. Hoonnivathana et al., DIFFUSION OF PHOSPHORUS IN CDTE, Journal of electronic materials, 27(6), 1998, pp. 610-614