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Results: 1-12 |

Table of contents of journal:

Results: 12
Silica, silicon nitride and oxynitride thin films - An overview of fabrication techniques, properties and applications
Authors: Balland, B Glachant, A
Citation: B. Balland et A. Glachant, Silica, silicon nitride and oxynitride thin films - An overview of fabrication techniques, properties and applications, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 3-144
A review of buried oxide structures and SOI technologies
Authors: Leray, JL
Citation: Jl. Leray, A review of buried oxide structures and SOI technologies, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 145-231
Dielectric breakdown in SiO2 - A survey of test methods
Authors: Wolters, DR Verwey, JF Zegers-Van Duijnhoven, ATA
Citation: Dr. Wolters et al., Dielectric breakdown in SiO2 - A survey of test methods, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 233-263
Hot carrier injections in SiO2 and related instabilities in submicrometer MOSFETs
Authors: Vuillaume, D
Citation: D. Vuillaume, Hot carrier injections in SiO2 and related instabilities in submicrometer MOSFETs, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 265-339
Multilayer dielectrics for memory applications
Authors: Gentil, P
Citation: P. Gentil, Multilayer dielectrics for memory applications, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 341-404
Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors
Authors: Autran, JL Balland, B Barbottin, G
Citation: Jl. Autran et al., Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 405-493
The study of thermal nitridation and reoxidation mechanisms using isotopictracing methods
Authors: Ganem, JJ Baumvol, JJR
Citation: Jj. Ganem et Jjr. Baumvol, The study of thermal nitridation and reoxidation mechanisms using isotopictracing methods, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 495-520
The space radiation environment
Authors: Braunig, D
Citation: D. Braunig, The space radiation environment, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 525-552
An overview of radiation-matter interactions
Authors: Fahrner, WR
Citation: Wr. Fahrner, An overview of radiation-matter interactions, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 553-637
Radiation effects in electronic components
Authors: Braunig, D Wulf, F
Citation: D. Braunig et F. Wulf, Radiation effects in electronic components, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 639-722
Defects and radiation-induced charge-trapping phenomena in SiO2
Authors: Paillet, P Leray, JL
Citation: P. Paillet et Jl. Leray, Defects and radiation-induced charge-trapping phenomena in SiO2, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 723-780
The effects of cosmic ions on electronic components
Authors: Musseau, O
Citation: O. Musseau, The effects of cosmic ions on electronic components, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 781-890
Risultati: 1-12 |