AAAAAA
Results: 1-25/1117
Authors:
Chobola, Z
Citation: Z. Chobola, Impulse noise in silicon solar cells, MICROELEC J, 32(9), 2001, pp. 707-711
Authors:
Pesic, T
Jankovic, N
Citation: T. Pesic et N. Jankovic, An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors, MICROELEC J, 32(9), 2001, pp. 713-718
Authors:
Rimada, JC
Hernandez, L
Citation: Jc. Rimada et L. Hernandez, Modelling of ideal AlGaAs quantum well solar cells, MICROELEC J, 32(9), 2001, pp. 719-723
Authors:
Goh, WL
Yeo, KS
Lazuardi, S
Peng, W
Leong, KC
Chan, L
See, A
Citation: Wl. Goh et al., Latchup characterization of 0.18-micron STI cobalt silicided test structures, MICROELEC J, 32(9), 2001, pp. 725-731
Authors:
Wang, AZ
Feng, HG
Gong, K
Zhan, RY
Stine, J
Citation: Az. Wang et al., On-chip ESD protection design for integrated circuits: an overview for IC designers, MICROELEC J, 32(9), 2001, pp. 733-747
Authors:
Kang, EG
Kim, S
Sung, MY
Citation: Eg. Kang et al., Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics, MICROELEC J, 32(9), 2001, pp. 749-753
Authors:
Huang, S
Amaratunga, GAJ
Udrea, F
Sheng, K
Waind, P
Coulbeck, L
Taylor, P
Citation: S. Huang et al., A dual-channel IEGT, MICROELEC J, 32(9), 2001, pp. 755-761
Authors:
He, J
Zhang, X
Citation: J. He et X. Zhang, A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P-N junction terminated with finite field plate, MICROELEC J, 32(9), 2001, pp. 763-767
Authors:
Jansen, H
de Boer, M
Wensink, H
Kloeck, B
Elwenspoek, M
Citation: H. Jansen et al., The black silicon method. VIII. A study of the performance of etching silicon using SF6/O-2-based chemistry with cryogenical wafer cooling and a highdensity ICP source, MICROELEC J, 32(9), 2001, pp. 769-777
Authors:
Sellai, A
Dawson, P
Citation: A. Sellai et P. Dawson, Scheme for enhancing efficiency in resonant-cavity Schottky photodetectors, MICROELEC J, 32(9), 2001, pp. 779-782
Authors:
Alves, MAR
Rossetto, JF
Balachova, O
Braga, ED
Cescato, L
Citation: Mar. Alves et al., Some optical properties of amorphous hydrogenated carbon thin films prepared by rf plasma deposition using methane, MICROELEC J, 32(9), 2001, pp. 783-786
Authors:
Rajendran, K
Schoenmaker, W
Citation: K. Rajendran et W. Schoenmaker, Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs, MICROELEC J, 32(8), 2001, pp. 631-639
Authors:
Kang, EG
Moon, SH
Sung, MY
Citation: Eg. Kang et al., A new trench electrode IGBT having superior electrical characteristics forpower IC systems, MICROELEC J, 32(8), 2001, pp. 641-647
Authors:
Rane, S
Puri, V
Citation: S. Rane et V. Puri, Thick film dielectric overlay effects on thin and thick film microstrip bandpass filter, MICROELEC J, 32(8), 2001, pp. 649-654
Authors:
He, J
Zhang, X
Citation: J. He et X. Zhang, Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor, MICROELEC J, 32(8), 2001, pp. 655-663
Authors:
Moisiadis, Y
Bouras, I
Arapoyanni, A
Dermentzoglou, L
Citation: Y. Moisiadis et al., A static differential double edge-triggered flip-flop based on clock racing, MICROELEC J, 32(8), 2001, pp. 665-671
Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealing
Authors:
Balachova, OV
Swart, JW
Braga, ES
Cescato, L
Citation: Ov. Balachova et al., Permittivity of amorphous hydrogenated carbon (alpha-C : H) films as a function of thermal annealing, MICROELEC J, 32(8), 2001, pp. 673-678
Authors:
Fairus, ATM
Arora, VK
Citation: Atm. Fairus et Vk. Arora, Quantum engineering of nanoelectronic devices: the role of quantum confinement on mobility degradation, MICROELEC J, 32(8), 2001, pp. 679-686
Modelling and simulations for 40 nm lines/spaces in 1 mu m Shipley SPR510Aresist using PRIME process
Authors:
Arshak, K
Arshak, A
Mihov, M
McDonagh, D
Citation: K. Arshak et al., Modelling and simulations for 40 nm lines/spaces in 1 mu m Shipley SPR510Aresist using PRIME process, MICROELEC J, 32(8), 2001, pp. 687-697
Citation: Patents Alert - Abstracts, MICROELEC J, 32(8), 2001, pp. 701-706
Authors:
Atanassova, E
Paskaleva, A
Konakova, R
Spassov, D
Mitin, VF
Citation: E. Atanassova et al., Influence of gamma radiation on thin Ta2O5-Si structures, MICROELEC J, 32(7), 2001, pp. 553-562
Authors:
Kim, ES
Oh, C
Lee, S
Lee, B
Yun, I
Citation: Es. Kim et al., Modeling and optimization of process parameters for GaAs/AlGaAs multiple quantum well avalanche photodiodes using genetic algorithms, MICROELEC J, 32(7), 2001, pp. 563-567
Authors:
Hirayama, K
Taniguchi, Y
Hayashi, Y
Koshiba, M
Citation: K. Hirayama et al., Finite element analysis of the transmission characteristics of quantum wires in a magnetic field, MICROELEC J, 32(7), 2001, pp. 569-577
Authors:
Teh, WH
Koh, LT
Chen, SM
Xie, J
Li, CY
Foo, PD
Citation: Wh. Teh et al., Study of microstructure and resistivity evolution for electroplated copperfilms at near-room temperature, MICROELEC J, 32(7), 2001, pp. 579-585
Authors:
Yang, CY
Wang, Z
Tan, CH
Xu, MZ
Citation: Cy. Yang et al., The degradation of p-MOSFETs under off-state stress, MICROELEC J, 32(7), 2001, pp. 587-591