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Results: 51-75/109
Authors:
FAY P
WOHLMUTH W
CANEAU C
ADESIDA I
Citation: P. Fay et al., 18.5-GHZ BANDWIDTH MONOLITHIC MSM MODFET PHOTORECEIVER FOR 1.55-MU-M WAVELENGTH COMMUNICATION-SYSTEMS/, IEEE photonics technology letters, 8(5), 1996, pp. 679-681
Authors:
SOOLE JBD
AMERSFOORT MR
LEBLANC HP
ANDREADAKIS NC
RAJHEL A
CANEAU C
BHAT R
KOZA MA
YOUTSEY C
ADESIDA I
Citation: Jbd. Soole et al., USE OF MULTIMODE INTERFERENCE COUPLERS TO BROADEN THE PASSBAND OF WAVELENGTH-DISPERSIVE INTEGRATED WDM FILTERS, IEEE photonics technology letters, 8(10), 1996, pp. 1340-1342
Authors:
HANNAN M
GIANNETTA RW
GRUNDBACHER R
ADESIDA I
EOM J
CHANDRASEKHAR V
Citation: M. Hannan et al., CONDUCTANCE STUDIES IN A DOUBLE-BEND QUANTUM STRUCTURE, Superlattices and microstructures, 20(4), 1996, pp. 427-433
Authors:
PANEPUCCI R
OSOWSKI ML
TURNBULL DA
GU SQ
BISHOP SG
COLEMAN JJ
ADESIDA I
Citation: R. Panepucci et al., INHOMOGENEITY IN THE FABRICATION OF INGAAS GAAS QUANTUM-WIRE ARRAYS BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Superlattices and microstructures, 20(1), 1996, pp. 111-116
Authors:
ARAFA M
FAY P
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451
Authors:
ARAFA M
FAY P
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 17(3), 1996, pp. 124-126
Authors:
ARAFA M
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET, IEEE electron device letters, 17(12), 1996, pp. 586-588
Authors:
XIANG A
WOHLMUTH W
FAY P
KANG SM
ADESIDA I
Citation: A. Xiang et al., MODELING OF INGAAS MSM PHOTODETECTOR FOR CIRCUIT-LEVEL SIMULATION, Journal of lightwave technology, 14(5), 1996, pp. 716-723
Authors:
MELLOCH MR
ADESIDA I
Citation: Mr. Melloch et I. Adesida, SPECIAL ISSUE - III-V NITRIDES AND SILICON - FOREWORD, Journal of electronic materials, 25(5), 1996, pp. 775-775
Authors:
PING AT
KHAN MA
ADESIDA I
Citation: At. Ping et al., OHMIC CONTACTS TO N-TYPE GAN USING PD AL METALLIZATION/, Journal of electronic materials, 25(5), 1996, pp. 819-824
Authors:
PING AT
SCHMITZ AC
KHAN MA
ADESIDA I
Citation: At. Ping et al., DRY-ETCHING OF GAN USING CHEMICALLY ASSISTED ION-BEAM ETCHING WITH HCL AND H-2 CL-2/, Journal of electronic materials, 25(5), 1996, pp. 825-829
Authors:
SCHMITZ AC
PING AT
KHAN MA
CHEN Q
YANG JW
ADESIDA I
Citation: Ac. Schmitz et al., SCHOTTKY-BARRIER PROPERTIES OF VARIOUS METALS ON N-TYPE GAN, Semiconductor science and technology, 11(10), 1996, pp. 1464-1467
Authors:
GRUNDBACHER R
YOUTSEY C
ADESIDA I
Citation: R. Grundbacher et al., 4-LAYER RESIST PROCESS FOR ASYMMETRIC GATE RECESS, Microelectronic engineering, 30(1-4), 1996, pp. 317-320
Authors:
SOOLE JBD
AMERSFOORT MR
LEBLANC HP
ANDREADAKIS NC
RAJHEL A
CANEAU C
KOZA MA
BHAT R
YOUTSEY C
ADESIDA I
Citation: Jbd. Soole et al., POLARIZATION-INDEPENDENT INP ARRAYED-WAVE-GUIDE FILTER USING SQUARE CROSS-SECTION WAVE-GUIDES, Electronics Letters, 32(4), 1996, pp. 323-324
Authors:
WOHLMUTH WA
FAY P
CANEAU C
ADESIDA I
Citation: Wa. Wohlmuth et al., LOW DARK CURRENT, LONG-WAVELENGTH METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Electronics Letters, 32(3), 1996, pp. 249-250
Authors:
SOOLE JBD
AMERSFOORT MR
LEBLANC HP
RAJHEL A
CANEAU C
YOUTSEY C
ADESIDA I
Citation: Jbd. Soole et al., COMPACT POLARIZATION-INDEPENDENT INP REFLECTIVE ARRAYED-WAVE-GUIDE GRATING FILTER, Electronics Letters, 32(19), 1996, pp. 1769-1771
Authors:
SCHMITZ AC
PING AT
KHAN MA
CHEN Q
YANG JW
ADESIDA I
Citation: Ac. Schmitz et al., HIGH-TEMPERATURE CHARACTERISTICS OF PD SCHOTTKY CONTACTS ON N-TYPE GAN, Electronics Letters, 32(19), 1996, pp. 1832-1833
Authors:
MAHAJAN A
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., HIGH-PERFORMANCE ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP, Electronics Letters, 32(11), 1996, pp. 1037-1038
Authors:
PING AT
SCHMITZ AC
KHAN MA
ADESIDA I
Citation: At. Ping et al., CHARACTERIZATION OF PD SCHOTTKY-BARRIER ON N-TYPE GAN, Electronics Letters, 32(1), 1996, pp. 68-70
Authors:
WOHLMUTH WA
ARAFA M
MAHAJAN A
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH ENGINEERED SCHOTTKY-BARRIER HEIGHTS, Applied physics letters, 69(23), 1996, pp. 3578-3580
Authors:
OSOWSKI ML
PANEPUCCI R
TURNBULL DA
GU SQ
JONES AM
BISHOP SG
ADESIDA I
COLEMAN JJ
Citation: Ml. Osowski et al., LATERAL INHOMOGENEITY IN INGAAS-GAAS QUANTUM-WIRE ARRAYS BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(8), 1996, pp. 1087-1089
Authors:
YOUTSEY C
ADESIDA I
Citation: C. Youtsey et I. Adesida, A COMPARATIVE-STUDY OF CL-2 AND HCL GASES FOR THE CHEMICALLY ASSISTEDION-BEAM ETCHING OF INP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2360-2365
Authors:
PANEPUCCI R
YOUTSEY C
TURNBULL DA
GU SQ
CANEAU C
BISHOP SG
ADESIDA I
Citation: R. Panepucci et al., FABRICATION OF INP INGAAS QUANTUM WIRES BY FREE CL-2/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2752-2756
Authors:
MASLAR JE
DORSTEN JF
BOHN PW
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: Je. Maslar et al., STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 988-994
Authors:
PING AT
YOUTSEY C
ADESIDA I
KHAN MA
KUZNIA JN
Citation: At. Ping et al., CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE, Journal of electronic materials, 24(4), 1995, pp. 229-234