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Results: 1-9 |
Results: 9
COMPOSITION STUDY OF HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAXAS1-X FILMS
Authors: SEGUIN JL ELHADADI B CARCHANO H AGUIR K
Citation: Jl. Seguin et al., COMPOSITION STUDY OF HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAXAS1-X FILMS, Journal of non-crystalline solids, 238(3), 1998, pp. 253-258
RAMAN AND ELECTRICAL CHARACTERIZATIONS OF A-GAAS1-XNX THIN-FILMS GROWN ON C-SI(P) SUBSTRATES BY N-2 REACTIVE SPUTTERING
Authors: BANDET J AGUIR K LOLLMAN D FENNOUH A CARCHANO H
Citation: J. Bandet et al., RAMAN AND ELECTRICAL CHARACTERIZATIONS OF A-GAAS1-XNX THIN-FILMS GROWN ON C-SI(P) SUBSTRATES BY N-2 REACTIVE SPUTTERING, JPN J A P 1, 36(1A), 1997, pp. 11-18
AMORPHOUS GAAS1-XNX THIN-FILMS ON CRYSTALLINE SI SUBSTRATES - GROWTH AND CHARACTERIZATIONS
Authors: LOLLMAN D AGUIR K ROUMIGUIERES B CARCHANO H
Citation: D. Lollman et al., AMORPHOUS GAAS1-XNX THIN-FILMS ON CRYSTALLINE SI SUBSTRATES - GROWTH AND CHARACTERIZATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1568-1571
THE EVOLUTION OF A-GAAS1-XNX C-GAAS INTERFACE STATES AS A FUNCTION OFAR-NH3 PLASMA/
Authors: AGUIR K LOLLMAN DBB CARCHANO H
Citation: K. Aguir et al., THE EVOLUTION OF A-GAAS1-XNX C-GAAS INTERFACE STATES AS A FUNCTION OFAR-NH3 PLASMA/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 157-160
III-V NITRIDE MATERIALS - AN APPROACH THROUGH AMORPHOUS GAAS1-XNX THIN-FILMS
Authors: LOLLMAN D AGUIR K BANDET J ROUMIGUIERES B CARCHANO H
Citation: D. Lollman et al., III-V NITRIDE MATERIALS - AN APPROACH THROUGH AMORPHOUS GAAS1-XNX THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 283-287
ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/
Authors: AGUIR K FENNOUH A CARCHANO H LOLLMAN D
Citation: K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/, Journal de physique. III, 5(10), 1995, pp. 1573-1585
ELECTRICAL CHARACTERISTICS OF AMORPHOUS GAAS-N-CRYSTALLINE SI HETEROJUNCTIONS
Authors: FENNOUH A AGUIR K CARCHANO H SEGUIN JL
Citation: A. Fennouh et al., ELECTRICAL CHARACTERISTICS OF AMORPHOUS GAAS-N-CRYSTALLINE SI HETEROJUNCTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 27-31
ELECTRICAL-PROPERTIES OF A-GAAS C-SI(P) HETEROJUNCTIONS/
Authors: AGUIR K FENNOUH A CARCHANO H SEGUIN JL ELHADADI B LALANDE F
Citation: K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-SI(P) HETEROJUNCTIONS/, Thin solid films, 257(1), 1995, pp. 98-103
HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAAS
Authors: SEGUIN JL ELHADADI B CARCHANO H FENNOUH A AGUIR K
Citation: Jl. Seguin et al., HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAAS, Journal of non-crystalline solids, 183(1-2), 1995, pp. 175-181
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