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Results: 1-25/33
Authors:
VAZQUEZ L
SALVAREZZA RC
ALBANO E
ARVIA AJ
CREUS AH
LEVY RA
ALBELLA JM
Citation: L. Vazquez et al., SURFACE-MORPHOLOGY EVOLUTION OF CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILMS ON SI(100), CHEMICAL VAPOR DEPOSITION, 4(3), 1998, pp. 89
Authors:
OJEDA F
CASTROGARCIA A
GOMEZALEIXANDRE C
ALBELLA JM
Citation: F. Ojeda et al., GROWTH-KINETICS OF CHEMICALLY VAPOR-DEPOSITED SIO2-FILMS FROM SILANE OXIDATION, Journal of materials research, 13(8), 1998, pp. 2308-2314
Authors:
LOPEZ JM
BABAEV VG
KHVOSTOV VV
ALBELLA JM
Citation: Jm. Lopez et al., HIGHLY ADHERENT DIAMOND COATINGS DEPOSITED ONTO WC-CO CEMENTED CARBIDES VIA BARRIER INTERLAYERS, Journal of materials research, 13(10), 1998, pp. 2841-2846
Authors:
OLIVARESROZA J
SANCHEZ O
ALBELLA JM
Citation: J. Olivaresroza et al., PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION SILICON OXYNITRIDE FILMS GROWN FROM SIH4-2 GAS-MIXTURES(NH3+O), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2757-2761
Authors:
JIMENEZ I
GARCIA MM
ALBELLA JM
TERMINELLO LJ
Citation: I. Jimenez et al., ORIENTATION OF GRAPHITIC PLANES DURING THE BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON - AN X-RAY-ABSORPTION NEAR-EDGE STUDY, Applied physics letters, 73(20), 1998, pp. 2911-2913
Authors:
GARCIA MM
JIMENEZ I
VAZQUEZ L
GOMEZALEIXANDRE C
ALBELLA JM
SANCHEZ O
TERMINELLO LJ
HIMPSEL FJ
Citation: Mm. Garcia et al., X-RAY-ABSORPTION SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY STUDY OF BIAS-ENHANCED NUCLEATION OF DIAMOND FILMS, Applied physics letters, 72(17), 1998, pp. 2105-2107
Authors:
NAJMI O
MONTERO I
GALAN L
ALBELLA JM
Citation: O. Najmi et al., CARBON INCORPORATION DURING THE DIELECTRIC-BREAKDOWN PROCESS OF SILICON-OXIDE, Surface and interface analysis, 25(2), 1997, pp. 94-98
Authors:
GOMEZALEIXANDRE C
GARCIA MM
SANCHEZ O
ALBELLA JM
Citation: C. Gomezaleixandre et al., INFLUENCE OF OXYGEN ON THE NUCLEATION AND GROWTH OF DIAMOND FILMS, Thin solid films, 303(1-2), 1997, pp. 34-38
Authors:
SANCHEZGARRIDO O
GOMEZALEIXANDRE C
OLIAS JS
ALBELLA JM
HERNANDEZVELEZ M
GUTIERREZ FF
Citation: O. Sanchezgarrido et al., DIELECTRIC AND RAMAN-SPECTROSCOPY OF MWCVD DIAMOND THIN-FILMS, Journal of materials science. Materials in electronics, 7(4), 1996, pp. 297-303
PREPARATION OF SI-N-B FILMS BY CVD TECHNIQUES - EFFECT OF SIH4 ADDITION TO B2H6 AND NH3 GAS-MIXTURES
Authors:
ESSAFTI A
GOMEZALEIXANDRE C
ALBELLA JM
Citation: A. Essafti et al., PREPARATION OF SI-N-B FILMS BY CVD TECHNIQUES - EFFECT OF SIH4 ADDITION TO B2H6 AND NH3 GAS-MIXTURES, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 580-583
Authors:
ESSAFTI A
GOMEZALEIXANDRE C
FIERRO JLG
FERNANDEZ M
ALBELLA JM
Citation: A. Essafti et al., CHEMICAL-VAPOR-DEPOSITION SYNTHESIS AND CHARACTERIZATION OF CO-DEPOSITED SILICON-NITROGEN-BORON MATERIALS, Journal of materials research, 11(10), 1996, pp. 2565-2574
Authors:
SANCHEZ O
AGUILAR MA
FALCONY C
MARTINEZDUART JM
ALBELLA JM
Citation: O. Sanchez et al., SIOXNY FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SICL4, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2088-2093
Authors:
POZA MMG
VELEZ MH
JIMENEZ J
GOMEZALEIXANDRE C
OLIAS JS
MONTES AB
ALBELLA JM
Citation: Mmg. Poza et al., CHARACTERIZATION OF BIAS ENHANCED MWCVD DIAMOND THIN-FILMS, Materials letters, 29(1-3), 1996, pp. 111-115
Authors:
GOMEZALEIXANDRE C
SANCHEZ O
VAZQUEZ L
GARCIA MM
ALBELLA JM
Citation: C. Gomezaleixandre et al., INFLUENCE OF METHANE CONCENTRATION ON THE NUCLEATION AND GROWTH-STAGES IN DIAMOND FILM DEPOSITION, Physica status solidi. a, Applied research, 154(1), 1996, pp. 23-32
Authors:
GOMEZALEIXANDRE C
ESSAFTI A
FERNANDEZ M
FIERRO JLG
ALBELLA JM
Citation: C. Gomezaleixandre et al., INFLUENCE OF DIBORANE FLOW RATE ON THE STRUCTURE AND STABILITY OF CVDBORON-NITRIDE FILMS, Journal of physical chemistry, 100(6), 1996, pp. 2148-2153
Authors:
VASQUEZ L
ALBELLA JM
SALVAREZZA RC
ARVIA AJ
LEVY RA
PERESE D
Citation: L. Vasquez et al., ROUGHENING KINETICS OF CHEMICAL-VAPOR-DEPOSITED COPPER-FILMS ON SI(100), Applied physics letters, 68(9), 1996, pp. 1285-1287
Authors:
GOMEZALEIXANDRE C
SANCHEZ O
ALBELLA JM
SANTISO J
FIGUERAS A
Citation: C. Gomezaleixandre et al., CVD OF COVALENT COMPOUNDS AND HIGH-T-C SUPERCONDUCTORS, Advanced materials, 7(2), 1995, pp. 111-119
Authors:
VAZQUEZ L
MONTERO I
ALBELLA JM
Citation: L. Vazquez et al., AFM STUDY OF THE DIELECTRIC-BREAKDOWN IN TA2O5 FILMS, Chemistry of materials, 7(9), 1995, pp. 1680-1685
Authors:
ALBELLA JM
GOMEZALEIXANDRE C
SANCHEZGARRIDO O
VAZQUEZ L
MARTINEZDUART JM
Citation: Jm. Albella et al., DEPOSITION OF DIAMOND AND BORON-NITRIDE FILMS BY PLASMA CHEMICAL-VAPOR-DEPOSITION, Surface & coatings technology, 70(2-3), 1995, pp. 163-174
Authors:
VAZQUEZ L
SANCHEZ O
ALBELLA JM
Citation: L. Vazquez et al., SCANNING-TUNNELING-MICROSCOPY MORPHOLOGICAL-STUDY OF THE 1ST STAGES OF GROWTH OF MICROWAVE CHEMICAL-VAPOR-DEPOSITED THIN DIAMOND FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 1-7
Authors:
VAZQUEZ L
ALBELLA JM
SANCHEZ O
GOMEZALEIXANDRE C
MARTINEZDUART JM
Citation: L. Vazquez et al., NUCLEATION AND INITIAL-STAGES OF GROWTH OF DIAMOND FILMS ON SILICON, Scripta metallurgica et materialia, 31(8), 1994, pp. 1103-1108
Authors:
SANCHEZ O
GOMEZALEIXANDRE C
AGULLO F
ALBELLA JM
Citation: O. Sanchez et al., STUDY OF THE PLASMA DISCHARGES IN DIAMOND DEPOSITION WITH DIFFERENT O2 CONCENTRATIONS, DIAMOND AND RELATED MATERIALS, 3(9), 1994, pp. 1183-1187
Authors:
VAZQUEZ L
SANCHEZ O
MESSEGUER F
ALBELLA JM
Citation: L. Vazquez et al., STM NANOMETRIC STUDY OF THE INITIAL-STAGES OF DIAMOND FILM GROWTH - QUANTITATIVE MEASUREMENT OF )111( AND )100( SURFACE-ROUGHNESS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 715-719
Authors:
MONTERO I
GALAN L
NAJMI O
ALBELLA JM
Citation: I. Montero et al., DISORDER-INDUCED VIBRATION-MODE COUPLING IN SIO2-FILMS OBSERVED UNDERNORMAL-INCIDENCE INFRARED RADIATION, Physical review. B, Condensed matter, 50(7), 1994, pp. 4881-4884
Authors:
PARKHUTIK VP
MARTINEZDUART JM
MORENO D
ALBELLA JM
GONZALEZVELASCO J
MARCOS ML
Citation: Vp. Parkhutik et al., IN-DEPTH INHOMOGENEOUS PHOTOLUMINESCENT PROPERTIES OF POROUS SILICON LAYERS, Surface and interface analysis, 22(1-12), 1994, pp. 358-362