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Results:
1-21
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Results: 21
Authors:
ALLONGUE P
DEVILLENEUVE CH
PINSON J
OZANAM F
CHAZALVIEL JN
WALLART X
Citation: P. Allongue et al., ORGANIC MONOLAYERS ON SI(111) BY ELECTROCHEMICAL METHOD, Electrochimica acta, 43(19-20), 1998, pp. 2791-2798
Authors:
DEVILLENEUVE CH
PINSON J
BERNARD MC
ALLONGUE P
Citation: Ch. Devilleneuve et al., ELECTROCHEMICAL FORMATION OF CLOSE-PACKED PHENYL LAYERS ON SI(111), JOURNAL OF PHYSICAL CHEMISTRY B, 101(14), 1997, pp. 2415-2420
Authors:
ALLONGUE P
DEVILLENEUVE CH
BERNARD MC
PEOU JE
BOUTRYFORVEILLE A
LEVYCLEMENT C
Citation: P. Allongue et al., RELATIONSHIP BETWEEN POROUS SILICON FORMATION AND HYDROGEN INCORPORATION, Thin solid films, 297(1-2), 1997, pp. 1-4
Authors:
KASPARIAN J
ELWENSPOEK M
ALLONGUE P
Citation: J. Kasparian et al., DIGITAL COMPUTATION AND IN-SITU STM APPROACH OF SILICON ANISOTROPIC ETCHING, Surface science, 388(1-3), 1997, pp. 50-62
Authors:
BUBENDORFF JL
CAGNON L
COSTAKIELING V
BUCHER JP
ALLONGUE P
Citation: Jl. Bubendorff et al., ANION PROMOTED NI-UNDERPOTENTIAL DEPOSITION ON AU(111), Surface science, 384(1-3), 1997, pp. 836-843
Authors:
ALLONGUE P
DELAMAR M
DESBAT B
FAGEBAUME O
HITMI R
PINSON J
SAVEANT JM
Citation: P. Allongue et al., COVALENT MODIFICATION OF CARBON SURFACES BY ARYL RADICALS GENERATED FROM THE ELECTROCHEMICAL REDUCTION OF DIAZONIUM SALTS, Journal of the American Chemical Society, 119(1), 1997, pp. 201-207
Authors:
ALLONGUE P
Citation: P. Allongue, MOLECULAR IMAGING AND LOCAL-DENSITY OF STATES CHARACTERIZATION AT THESI(111) NAOH INTERFACE/, Physical review letters, 77(10), 1996, pp. 1986-1989
Authors:
ALLONGUE P
KIELING V
GERISCHER H
Citation: P. Allongue et al., ATOMIC-STRUCTURE OF SI SURFACES ETCHED IN TRITON NAOH SOLUTIONS/, Journal of physical chemistry, 99(23), 1995, pp. 9472-9478
Authors:
ALLONGUE P
KIELING V
GERISCHER H
Citation: P. Allongue et al., ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPAREDIN NH4F, Electrochimica acta, 40(10), 1995, pp. 1353-1360
Authors:
ALLONGUE P
DEVILLENEUVE CH
PINSARD L
BERNARD MC
Citation: P. Allongue et al., EVIDENCE FOR HYDROGEN INCORPORATION DURING POROUS SILICON FORMATION, Applied physics letters, 67(7), 1995, pp. 941-943
Authors:
ALLONGUE P
Citation: P. Allongue, IN-SITU SCANNING-TUNNELING-MICROSCOPY OF THE SEMICONDUCTOR-ELECTROLYTE INTERFACE, Journal de physique. IV, 4(C1), 1994, pp. 323-327
Authors:
ALLONGUE P
KASPARIAN J
Citation: P. Allongue et J. Kasparian, MONTE-CARLO SIMULATIONS OF SI ETCHING - COMPARISON WITH IN-SITU STM IMAGES, Microscopy microanalysis microstructures, 5(4-6), 1994, pp. 257-267
Authors:
ROCHE JR
RAMONDA M
THIBAUDAU F
DUMAS P
MATHIEZ P
SALVAN F
ALLONGUE P
Citation: Jr. Roche et al., STRUCTURE OF SI(111) SURFACES ETCHED IN 40-PERCENT NH4F - INFLUENCE OF THE DOPING, Microscopy microanalysis microstructures, 5(4-6), 1994, pp. 291-299
Authors:
ALLONGUE P
BERTAGNA V
KIELING V
GERISCHER H
Citation: P. Allongue et al., PROBING BY IN-SITU SCANNING-TUNNELING-MICROSCOPY THE INFLUENCE OF AN ORGANIC ADDITIVE ON SI ETCHING IN NAOH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1539-1542
Authors:
ALLONGUE P
Citation: P. Allongue, SCANNING PROBE MICROSCOPY OF SEMICONDUCTOR SURFACES, Analusis, 22(8), 1994, pp. 130000017-130000019
Authors:
ALLONGUE P
SOUTEYRAND E
Citation: P. Allongue et E. Souteyrand, METAL ELECTRODEPOSITION ON SEMICONDUCTORS .2. DESCRIPTION OF THE NUCLEATION PROCESSES, Journal of electroanalytical chemistry [1992], 362(1-2), 1993, pp. 79-87
Authors:
ALLONGUE P
SOUTEYRAND E
ALLEMAND L
Citation: P. Allongue et al., METAL ELECTRODEPOSITION ON SEMICONDUCTORS .3. DESCRIPTION OF CHARGE-TRANSFER AND IMPLICATION FOR THE FORMATION OF SCHOTTKY DIODES, Journal of electroanalytical chemistry [1992], 362(1-2), 1993, pp. 89-95
Authors:
ALLONGUE P
COSTAKIELING V
GERISCHER H
Citation: P. Allongue et al., ETCHING OF SILICON IN NAOH SOLUTIONS .1. INSITU SCANNING TUNNELING MICROSCOPIC INVESTIGATION OF N-SI(111), Journal of the Electrochemical Society, 140(4), 1993, pp. 1009-1018
Authors:
ALLONGUE P
COSTAKIELING V
GERISCHER H
Citation: P. Allongue et al., ETCHING OF SILICON IN NAOH SOLUTIONS .2. ELECTROCHEMICAL STUDIES OF N-SI(111) AND N-SI(100) AND MECHANISM OF THE DISSOLUTION, Journal of the Electrochemical Society, 140(4), 1993, pp. 1018-1026
Authors:
GERISCHER H
ALLONGUE P
KIELING VC
Citation: H. Gerischer et al., THE MECHANISM OF THE ANODIC-OXIDATION OF SILICON IN ACIDIC FLUORIDE SOLUTIONS REVISITED, Berichte der Bunsengesellschaft fur Physikalische Chemie, 97(6), 1993, pp. 753-756
Authors:
ALLONGUE P
BLONKOWSKI S
SOUTEYRAND E
Citation: P. Allongue et al., EXPERIMENTAL INVESTIGATION OF CHARGE-TRANSFER AT THE SEMICONDUCTOR ELECTROLYTE JUNCTION, Electrochimica acta, 37(5), 1992, pp. 781-797
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