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Results: 1-12 |
Results: 12
OXIDE THICKNESS-DEPENDENCE AND BIAS-DEPENDENCE OF POSTMETALLIZATION ANNEALING OF INTERFACE STATES IN METAL-OXIDE-SILICON DIODES
Authors: RAGNARSSON LA LUNDGREN P OVUKA Z ANDERSSON MO
Citation: La. Ragnarsson et al., OXIDE THICKNESS-DEPENDENCE AND BIAS-DEPENDENCE OF POSTMETALLIZATION ANNEALING OF INTERFACE STATES IN METAL-OXIDE-SILICON DIODES, Journal of the Electrochemical Society, 144(5), 1997, pp. 1866-1869
WEAK FLUENCE DEPENDENCE OF CHARGE GENERATION IN ULTRA-THIN OXIDES ON SILICON
Authors: FARMER KR DEBAUCHE CP GIORDANO AR LUNDGREN P ANDERSSON MO BUCHANAN DA
Citation: Kr. Farmer et al., WEAK FLUENCE DEPENDENCE OF CHARGE GENERATION IN ULTRA-THIN OXIDES ON SILICON, Applied surface science, 104, 1996, pp. 369-372
ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS
Authors: AFANASEV VV STESMANS A ANDERSSON MO
Citation: Vv. Afanasev et al., ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS, Physical review. B, Condensed matter, 54(15), 1996, pp. 10820-10826
TEMPERATURE-DEPENDENCE CONFIRMATION OF TUNNELING THROUGH 2-6 NM SILICON DIOXIDE
Authors: LUNDGREN P ANDERSSON MO
Citation: P. Lundgren et Mo. Andersson, TEMPERATURE-DEPENDENCE CONFIRMATION OF TUNNELING THROUGH 2-6 NM SILICON DIOXIDE, Solid-state electronics, 39(8), 1996, pp. 1143-1147
ELECTRICAL INSTABILITY OF ULTRATHIN THERMAL OXIDES ON SILICON
Authors: LUNDGREN P ANDERSSON MO FARMER KR ENGSTROM O
Citation: P. Lundgren et al., ELECTRICAL INSTABILITY OF ULTRATHIN THERMAL OXIDES ON SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 67-70
INSTABILITY OF CHARGED DEFECTS IN ELECTRICALLY STRESSED METAL-TUNNEL OXIDE-SILICON DIODES
Authors: LUNDGREN P ANDERSSON MO FARMER KR ENGSTROM O
Citation: P. Lundgren et al., INSTABILITY OF CHARGED DEFECTS IN ELECTRICALLY STRESSED METAL-TUNNEL OXIDE-SILICON DIODES, Journal of non-crystalline solids, 187, 1995, pp. 140-143
SURFACE-POTENTIAL DEPENDENCE OF INTERFACE STATE PASSIVATION IN METAL-TUNNEL OXIDE-SILICON DIODES
Authors: ANDERSSON MO LUNDGREN A LUNDGREN P
Citation: Mo. Andersson et al., SURFACE-POTENTIAL DEPENDENCE OF INTERFACE STATE PASSIVATION IN METAL-TUNNEL OXIDE-SILICON DIODES, Journal of non-crystalline solids, 187, 1995, pp. 273-277
THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING
Authors: LJUNGBERG K BACKLUND Y SODERBARG A BERGH M ANDERSSON MO BENGTSSON S
Citation: K. Ljungberg et al., THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(4), 1995, pp. 1297-1303
WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON
Authors: AFANASEV VV ERICSSON P BENGTSSON S ANDERSSON MO
Citation: Vv. Afanasev et al., WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON, Applied physics letters, 66(13), 1995, pp. 1653-1655
SURFACE-POTENTIAL DEPENDENCE OF INTERFACE-STATE PASSIVATION IN METAL-TUNNEL-OXIDE-SILICON DIODES
Authors: ANDERSSON MO LUNDGREN A LUNDGREN P
Citation: Mo. Andersson et al., SURFACE-POTENTIAL DEPENDENCE OF INTERFACE-STATE PASSIVATION IN METAL-TUNNEL-OXIDE-SILICON DIODES, Physical review. B, Condensed matter, 50(16), 1994, pp. 11666-11676
ANNEALING AND CHARGING OF SLOW AND FAST STATES IN METAL-TUNNEL OXIDE-SILICON DIODES MEASURED USING CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE TECHNIQUES
Authors: ANDERSSON MO LUNDGREN P ENGSTROM O FARMER KR
Citation: Mo. Andersson et al., ANNEALING AND CHARGING OF SLOW AND FAST STATES IN METAL-TUNNEL OXIDE-SILICON DIODES MEASURED USING CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE TECHNIQUES, Microelectronic engineering, 22(1-4), 1993, pp. 235-238
POST-METALLIZATION ANNEALING OF METAL-TUNNEL OXIDE-SILICON DIODES
Authors: LUNDGREN P ANDERSSON MO FARMER KR
Citation: P. Lundgren et al., POST-METALLIZATION ANNEALING OF METAL-TUNNEL OXIDE-SILICON DIODES, Journal of applied physics, 74(7), 1993, pp. 4780-4782
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