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Results: 1-13 |
Results: 13
ISOLATION PROCESS DEPENDENCE OF CHANNEL MOBILITY IN THIN-FILM SOI DEVICES
Authors: HUANG CL SOLEIMANI H GRULA G ARORA ND ANTONIADIS D
Citation: Cl. Huang et al., ISOLATION PROCESS DEPENDENCE OF CHANNEL MOBILITY IN THIN-FILM SOI DEVICES, IEEE electron device letters, 17(6), 1996, pp. 291-293
MODELING AND EXTRACTION OF INTERCONNECT CAPACITANCES FOR MULTILAYER VLSI CIRCUITS
Authors: ARORA ND RAOL KV SCHUMANN R RICHARDSON LM
Citation: Nd. Arora et al., MODELING AND EXTRACTION OF INTERCONNECT CAPACITANCES FOR MULTILAYER VLSI CIRCUITS, IEEE transactions on computer-aided design of integrated circuits and systems, 15(1), 1996, pp. 58-67
EFFECTS OF SOURCE DRAIN IMPLANTS ON SHORT-CHANNEL MOSFET-I-V AND C-V CHARACTERISTICS/
Authors: HUANG CL KHALIL NA ARORA ND ZETTERLUND B BAIR LA
Citation: Cl. Huang et al., EFFECTS OF SOURCE DRAIN IMPLANTS ON SHORT-CHANNEL MOSFET-I-V AND C-V CHARACTERISTICS/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1255-1261
MODELING THE POLYSILICON DEPLETION EFFECT AND ITS IMPACT ON SUBMICROMETER CMOS CIRCUIT PERFORMANCE
Authors: ARORA ND RIOS R HUANG CL
Citation: Nd. Arora et al., MODELING THE POLYSILICON DEPLETION EFFECT AND ITS IMPACT ON SUBMICROMETER CMOS CIRCUIT PERFORMANCE, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 935-943
AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS
Authors: RIOS R ARORA ND HUANG CL
Citation: R. Rios et al., AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS, IEEE electron device letters, 15(4), 1994, pp. 129-131
SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING
Authors: SU LT ANTONIADIS DA ARORA ND DOYLE BS KRAKAUER DB
Citation: Lt. Su et al., SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING, IEEE electron device letters, 15(10), 1994, pp. 374-376
CHARACTERIZATION AND MODELING OF THE N-CHANNEL AND P-CHANNEL MOSFETS INVERSION-LAYER MOBILITY IN THE RANGE 25-125-DEGREES-C
Authors: HUANG CL ARORA ND
Citation: Cl. Huang et Nd. Arora, CHARACTERIZATION AND MODELING OF THE N-CHANNEL AND P-CHANNEL MOSFETS INVERSION-LAYER MOBILITY IN THE RANGE 25-125-DEGREES-C, Solid-state electronics, 37(1), 1994, pp. 97-103
PCIM - A PHYSICALLY-BASED CONTINUOUS SHORT-CHANNEL IGFET MODEL FOR CIRCUIT SIMULATION
Authors: ARORA ND RIOS R HUANG CL RAOL K
Citation: Nd. Arora et al., PCIM - A PHYSICALLY-BASED CONTINUOUS SHORT-CHANNEL IGFET MODEL FOR CIRCUIT SIMULATION, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 988-997
OPTIMA - A NONLINEAR MODEL PARAMETER EXTRACTION PROGRAM WITH STATISTICAL CONFIDENCE REGION ALGORITHMS
Authors: SHARMA MS ARORA ND
Citation: Ms. Sharma et Nd. Arora, OPTIMA - A NONLINEAR MODEL PARAMETER EXTRACTION PROGRAM WITH STATISTICAL CONFIDENCE REGION ALGORITHMS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(7), 1993, pp. 982-987
CIRCUIT-DESIGN GUIDELINES FOR N-CHANNEL MOSFET HOT-CARRIER ROBUSTNESS
Authors: MISTRY KR FOX TF PRESTON RP ARORA ND DOYLE BS NELSEN DE
Citation: Kr. Mistry et al., CIRCUIT-DESIGN GUIDELINES FOR N-CHANNEL MOSFET HOT-CARRIER ROBUSTNESS, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1284-1295
A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY
Authors: HUANG CL FARICELLI JV ARORA ND
Citation: Cl. Huang et al., A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1134-1139
MEASUREMENTS AND MODELING OF MOSFET-IV CHARACTERISTICS WITH POLYSILICON DEPLETION EFFECT
Authors: HUANG CL ARORA ND
Citation: Cl. Huang et Nd. Arora, MEASUREMENTS AND MODELING OF MOSFET-IV CHARACTERISTICS WITH POLYSILICON DEPLETION EFFECT, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2330-2337
EFFECT OF POLYSILICON DEPLETION ON MOSFET IV CHARACTERISTICS
Authors: HUANG CL ARORA ND NASR AI BELL DA
Citation: Cl. Huang et al., EFFECT OF POLYSILICON DEPLETION ON MOSFET IV CHARACTERISTICS, Electronics Letters, 29(13), 1993, pp. 1208-1209
Risultati: 1-13 |