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Results: 1-19 |
Results: 19
PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES
Authors: GRUBER O PAILLET P MUSSEAU O MARCANDELLA C ASPAR B AUBERTONHERVE AJ
Citation: O. Gruber et al., PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1402-1406
SMART-CUT - A NEW SILICON-ON-INSULATOR MATERIAL TECHNOLOGY-BASED ON HYDROGEN IMPLANTATION AND WAFER BONDING
Authors: BRUEL M ASPAR B AUBERTONHERVE AJ
Citation: M. Bruel et al., SMART-CUT - A NEW SILICON-ON-INSULATOR MATERIAL TECHNOLOGY-BASED ON HYDROGEN IMPLANTATION AND WAFER BONDING, JPN J A P 1, 36(3B), 1997, pp. 1636-1641
WAFER BONDING AND H-IMPLANTATION MECHANISMS INVOLVED IN THE SMART-CUT(R) TECHNOLOGY
Authors: MALEVILLE C ASPAR B POUMEYROL T MORICEAU H BRUEL M AUBERTONHERVE AJ BARGE T
Citation: C. Maleville et al., WAFER BONDING AND H-IMPLANTATION MECHANISMS INVOLVED IN THE SMART-CUT(R) TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 14-19
CHARACTERIZATION BY ATOMIC-FORCE MICROSCOPY OF THE SOI LAYER TOPOGRAPHY IN LOW-DOSE SIMOX MATERIALS
Authors: GUILHALMENC C MORICEAU H ASPAR B AUBERTONHERVE AJ LAMURE JM
Citation: C. Guilhalmenc et al., CHARACTERIZATION BY ATOMIC-FORCE MICROSCOPY OF THE SOI LAYER TOPOGRAPHY IN LOW-DOSE SIMOX MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 29-32
SMART-CUT(R) - THE BASIC FABRICATION UNIBOND(R) SOI WAFERS
Authors: AUBERTONHERVE AJ BRUEL M ASPAR B MALEVILLE C MORICEAU H
Citation: Aj. Aubertonherve et al., SMART-CUT(R) - THE BASIC FABRICATION UNIBOND(R) SOI WAFERS, IEICE transactions on electronics, E80C(3), 1997, pp. 358-363
BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS
Authors: ASPAR B BRUEL M MORICEAU H MALEVILLE C POUMEYROL T PAPON AM CLAVERIE A BENASSAYAG G AUBERTONHERVE AJ BARGE T
Citation: B. Aspar et al., BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS, Microelectronic engineering, 36(1-4), 1997, pp. 233-240
CHARGE TRAPPING IN SIMOX AND UNIBOND(R) OXIDES
Authors: GRUBER O PAILLET P AUTRAN JL ASPAR B AUBERTONHERVE AJ
Citation: O. Gruber et al., CHARGE TRAPPING IN SIMOX AND UNIBOND(R) OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 387-390
DETAILED CHARACTERIZATION OF UNIBOND MATERIAL
Authors: MUNTEANU D MALEVILLE C CRISTOLOVEANU S MORICEAU H ASPAR B RAYNAUD C FAYNOT O PELLOIE JL AUBERTONHERVE AJ
Citation: D. Munteanu et al., DETAILED CHARACTERIZATION OF UNIBOND MATERIAL, Microelectronic engineering, 36(1-4), 1997, pp. 395-398
X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS
Authors: PAILLET P AUTRAN JL FLAMENT O LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS, IEEE transactions on nuclear science, 43(3), 1996, pp. 821-825
BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES
Authors: ASPAR B GUILHALMENC C PUDDA C GARCIA A PAPON AM AUBERTONHERVE AJ LAMURE JM
Citation: B. Aspar et al., BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES, Microelectronic engineering, 28(1-4), 1995, pp. 411-414
SOI SUBSTRATES FOR LOW-POWER LSIS
Authors: AUBERTONHERVE AJ ASPAR B PELLOIE JL
Citation: Aj. Aubertonherve et al., SOI SUBSTRATES FOR LOW-POWER LSIS, Solid state technology, 38(3), 1995, pp. 87
TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES
Authors: PAILLET P AUTRAN JL LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2108-2113
PERFORMANCE AND POTENTIAL OF ULTRATHIN ACCUMULATION-MODE SIMOX MOSFETS
Authors: FAYNOT O CRISTOLOVEANU S AUBERTONHERVE AJ RAYNAUD C
Citation: O. Faynot et al., PERFORMANCE AND POTENTIAL OF ULTRATHIN ACCUMULATION-MODE SIMOX MOSFETS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 713-719
SOI-BASED DEVICES - STATUS OVERVIEW
Authors: AUBERTONHERVE AJ NISHIMURA T
Citation: Aj. Aubertonherve et T. Nishimura, SOI-BASED DEVICES - STATUS OVERVIEW, Solid state technology, 37(7), 1994, pp. 89
ANALYSIS OF THE LATCH AND BREAKDOWN PHENOMENA IN N AND P CHANNEL THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE
Authors: BALESTRA F JOMAAH J GHIBAUDO G FAYNOT O AUBERTONHERVE AJ GIFFARD B
Citation: F. Balestra et al., ANALYSIS OF THE LATCH AND BREAKDOWN PHENOMENA IN N AND P CHANNEL THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 109-112
SPECIAL SOI-BASED DEVICES
Authors: AUBERTONHERVE AJ
Citation: Aj. Aubertonherve, SPECIAL SOI-BASED DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 339-346
HOT-CARRIER DEGRADATION IN ULTRA-THIN FULLY-DEPLETED ACCUMULATION-MODE SIMOX N-MOSFETS
Authors: FAYNOT O CRISTOLOVEANU S AUBERTONHERVE AJ REIMBOLD G
Citation: O. Faynot et al., HOT-CARRIER DEGRADATION IN ULTRA-THIN FULLY-DEPLETED ACCUMULATION-MODE SIMOX N-MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 407-410
RADIATION HARDENING OF INTEGRATED-CIRCUIT S TECHNOLOGIES
Authors: AUBERTONHERVE AJ LERAY JL
Citation: Aj. Aubertonherve et Jl. Leray, RADIATION HARDENING OF INTEGRATED-CIRCUIT S TECHNOLOGIES, Annales de chimie, 18(2), 1993, pp. 85-99
CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES
Authors: SEGHIR H CRISTOLOVEANU S JERISIAN R OUALID J AUBERTONHERVE AJ
Citation: H. Seghir et al., CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1104-1111
Risultati: 1-19 |