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Results: 51-75/90
Authors:
Pozina, G
Bergman, JP
Monemar, B
Yamaguchi, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant, APPL PHYS L, 76(23), 2000, pp. 3388-3390
Authors:
Chow, WW
Amano, H
Akasaki, I
Citation: Ww. Chow et al., Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers, APPL PHYS L, 76(13), 2000, pp. 1647-1649
Authors:
Tabuchi, M
Takeda, Y
Matsumoto, N
Amano, H
Akasaki, I
Citation: M. Tabuchi et al., X-ray interference and crystal truncation rod observation of GaN and GaInNlayers grown on sapphire with AlN buffer layer, JPN J A P 1, 38, 1999, pp. 281-284
Authors:
Kariya, M
Nitta, S
Yamaguchi, S
Amano, H
Akasaki, I
Citation: M. Kariya et al., Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy, JPN J A P 2, 38(9AB), 1999, pp. L984-L986
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Low-intensity ultraviolet photodetectors based on AlGaN, JPN J A P 2, 38(5A), 1999, pp. L487-L489
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Kaschner, A
Bechstedt, F
Amano, H
Akasaki, I
Citation: G. Steude et al., Strain modification of GaN in AlGaN/GaN epitaxial films, JPN J A P 2, 38(5A), 1999, pp. L498-L500
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures, JPN J A P 2, 38(2B), 1999, pp. L163-L165
Authors:
Kashima, T
Nakamura, R
Iwaya, M
Katoh, H
Yamaguchi, S
Amano, H
Akasaki, I
Citation: T. Kashima et al., Microscopic investigation of Al0.43Ga0.57N on sapphire, JPN J A P 2, 38(12B), 1999, pp. L1515-L1518
Authors:
Hofmann, DM
Meyer, BK
Leiter, F
von Forster, W
Alves, H
Romanov, N
Amano, H
Akasaki, I
Citation: Dm. Hofmann et al., Optical transitions of the Mg acceptor in GaN, JPN J A P 2, 38(12A), 1999, pp. L1422-L1424
Authors:
Watanabe, A
Takahashi, H
Tanaka, T
Ota, H
Chikuma, K
Amano, H
Kashima, T
Nakamura, R
Akasaki, I
Citation: A. Watanabe et al., Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy, JPN J A P 2, 38(10B), 1999, pp. L1159-L1162
Authors:
Amano, H
Iwaya, M
Katsuragawa, M
Takeuchi, T
Kato, H
Akasaki, I
Citation: H. Amano et al., Growth of GaN on highly mismatched substrate and its application to novel devices, DIAM RELAT, 8(2-5), 1999, pp. 302-304
Authors:
Ambe, C
Takeuchi, T
Katoh, H
Isomura, K
Satoh, T
Mizumoto, R
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, Y
Yamada, N
Citation: C. Ambe et al., GaN-based laser diode with focused ion beam-etched mirrors, MAT SCI E B, 59(1-3), 1999, pp. 382-385
Authors:
Hofmann, DM
Burkhardt, W
Leiter, F
von Forster, W
Alves, H
Hofstaetter, A
Meyer, BK
Romanov, NG
Amano, H
Akasaki, I
Citation: Dm. Hofmann et al., Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration, PHYSICA B, 274, 1999, pp. 43-45
Authors:
Wetzel, C
Ager, JW
Topf, M
Meyer, BK
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Correlation of vibrational modes and DX-like centers in GaN : O, PHYSICA B, 274, 1999, pp. 109-112
Authors:
Hagele, D
Zimmermann, R
Oestreich, M
Hofmann, MR
Ruhle, WW
Meyer, BK
Amano, H
Akasaki, I
Citation: D. Hagele et al., Energy loss rate of excitons in GaN, PHYSICA B, 272(1-4), 1999, pp. 409-411
Authors:
Meyer, BK
Steude, G
Goldner, A
Hoffmann, A
Amano, H
Akasaki, I
Citation: Bk. Meyer et al., Photoluminescence investigations of AlGaN on GaN epitaxial films, PHYS ST S-B, 216(1), 1999, pp. 187-191
Authors:
Watanabe, S
Yamada, N
Yamada, Y
Taguchi, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: S. Watanabe et al., Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements, PHYS ST S-B, 216(1), 1999, pp. 335-339
Authors:
Wetzel, C
Kasumi, M
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Discrete stark-like ladder in piezoelectric GaInN/GaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 399-403
Authors:
Amano, H
Iwaya, M
Hayashi, N
Kashima, T
Nitta, S
Wetzel, C
Akasaki, I
Citation: H. Amano et al., Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer, PHYS ST S-B, 216(1), 1999, pp. 683-689
Authors:
Wagner, M
Buyanova, IA
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: M. Wagner et al., Magnetooptical investigations on electron irradiated GaN, PHYS SCR, T79, 1999, pp. 53-55
Authors:
Dalfors, J
Holtz, PO
Bergman, JP
Monemar, B
Amano, H
Akasaki, I
Citation: J. Dalfors et al., Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy, PHYS SCR, T79, 1999, pp. 60-63
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Edwards, NV
Monemar, B
Lindstrom, JL
Bremser, MD
Davis, RF
Amano, H
Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Authors:
Hagele, D
Zimmermann, R
Oestreich, M
Hofmann, MR
Ruhle, WW
Meyer, BK
Amano, H
Akasaki, I
Citation: D. Hagele et al., Cooling dynamics of excitons in GaN, PHYS REV B, 59(12), 1999, pp. R7797-R7800
Authors:
Takeuchi, T
Detchprohm, T
Yano, M
Yamaguchi, M
Hayashi, N
Iwaya, M
Isomura, K
Kimura, K
Amano, H
Akasaki, I
Kaneko, Y
Watanabe, S
Yamaoka, Y
Shioda, R
Hidaka, T
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer, PHYS ST S-A, 176(1), 1999, pp. 31-34
Authors:
Kaneko, Y
Shioda, R
Yamada, N
Takeuchi, T
Amano, H
Akasaki, I
Citation: Y. Kaneko et al., Sandy on electroluminescence spectrum and waveguide loss of GaInN multiplequantum well lasers, PHYS ST S-A, 176(1), 1999, pp. 137-140