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Results: 1-25 |
Results: 25
Difference mode generation in injection lasers
Authors: Aleshkin, VY Afonenko, AA Zvonkov, NB
Citation: Vy. Aleshkin et al., Difference mode generation in injection lasers, SEMICONDUCT, 35(10), 2001, pp. 1203-1207
Resonant acceptors states in Ge/Ge1-xSix heterostructures with quantum wells
Authors: Aleshkin, VY Andreev, BA Gavrilenko, VI Erofeeva, IV Kozlov, DV Kuznetsov, OA
Citation: Vy. Aleshkin et al., Resonant acceptors states in Ge/Ge1-xSix heterostructures with quantum wells, IAN FIZ, 65(2), 2001, pp. 249-251
Electron transport and shot noise in ultrashort single-barrier semiconductor heterostructures - art. no. 085302
Authors: Aleshkin, VY Reggiani, L Reklaitis, A
Citation: Vy. Aleshkin et al., Electron transport and shot noise in ultrashort single-barrier semiconductor heterostructures - art. no. 085302, PHYS REV B, 6308(8), 2001, pp. 5302
N-type negative differential conductance in quasiballistic single-barrier heterostructures
Authors: Aleshkin, VY Reggiani, L Reklaitis, A
Citation: Vy. Aleshkin et al., N-type negative differential conductance in quasiballistic single-barrier heterostructures, J APPL PHYS, 90(8), 2001, pp. 3979-3983
The use of a scanning tunneling microscope (STM) for investigation of local photoconductivity of quantum-dimensional semiconductor structures
Authors: Aleshkin, VY Biryukov, AV Gaponov, SV Krasil'nik, ZF Mironov, VL
Citation: Vy. Aleshkin et al., The use of a scanning tunneling microscope (STM) for investigation of local photoconductivity of quantum-dimensional semiconductor structures, TECH PHYS L, 26(1), 2000, pp. 1-3
Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field
Authors: Aleshkin, VY Gaponova, DM Gavrilenko, VI Krasil'nik, ZF Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Diagnostics of the hot-hole distribution function in quantum wells in a strong electric field, SEMICONDUCT, 34(9), 2000, pp. 1073-1078
Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells
Authors: Aleshkin, VY Andreev, BA Gavrilenko, VI Erofeeva, IV Kozlov, DV Kuznetsov, OA
Citation: Vy. Aleshkin et al., Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells, SEMICONDUCT, 34(5), 2000, pp. 563-567
Zero-phonon and dipole Gamma-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field
Authors: Aleshkin, VY Andronov, AA
Citation: Vy. Aleshkin et Aa. Andronov, Zero-phonon and dipole Gamma-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field, SEMICONDUCT, 34(5), 2000, pp. 575-582
Optical absorption and birefringence is GaAs/AlAs MQW structures due to intersubband electron transitions
Authors: Vorobjev, LE Danilov, SN Titkov, IE Firsov, DA Shalygin, VA Zhukov, AE Kovsh, AR Ustinov, VM Aleshkin, VY Andreev, BA Andronov, AA Demidov, EV
Citation: Le. Vorobjev et al., Optical absorption and birefringence is GaAs/AlAs MQW structures due to intersubband electron transitions, NANOTECHNOL, 11(4), 2000, pp. 218-220
Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures
Authors: Aleshkin, VY Andreev, BA Gavrilenko, VI Erofeeva, IV Kozlov, DV Kuznetsov, OA
Citation: Vy. Aleshkin et al., Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures, NANOTECHNOL, 11(4), 2000, pp. 348-350
Current instability and shot noise in nanometric semiconductor heterostructures
Authors: Aleshkin, VY Reggiani, L Reklaitis, A
Citation: Vy. Aleshkin et al., Current instability and shot noise in nanometric semiconductor heterostructures, NANOTECHNOL, 11(4), 2000, pp. 370-374
Hot electron intervalley transfer quantum well lasers
Authors: Aleshkin, VY Andronov, AA Demidov, EV
Citation: Vy. Aleshkin et al., Hot electron intervalley transfer quantum well lasers, IAN FIZ, 64(2), 2000, pp. 227-230
Electron heating and inversion in GaAs/AlAs multi quantum well heterostructures
Authors: Aleshkin, VY Andronov, AA Demidov, EV
Citation: Vy. Aleshkin et al., Electron heating and inversion in GaAs/AlAs multi quantum well heterostructures, IAN FIZ, 64(2), 2000, pp. 231-234
Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gaponova, DM Gavrilenko, VI Revin, DG Zvonkov, BN Uskova, EA
Citation: Vy. Aleshkin et al., Distribution function of hot holes and real space transfer in p-type InGaAs/GaAs heterostructures with quantum wells, IAN FIZ, 64(2), 2000, pp. 302-307
Cyclotron resonance of two-dimensional holes in strained multi quantum-well heterostructures Ge/Ge1-xSix in quantizing magnetic fields
Authors: Aleshkin, VY Vaks, VL Veksler, DB Gavrilenko, VI Erofeeva, IV Moldavskaya, MD Kuznetsov, OA Goiran, M Leotin, J Yang, F
Citation: Vy. Aleshkin et al., Cyclotron resonance of two-dimensional holes in strained multi quantum-well heterostructures Ge/Ge1-xSix in quantizing magnetic fields, IAN FIZ, 64(2), 2000, pp. 308-312
STM spectroscopy of local photoconductivity of InGaAs/GaAs heterostructures with quantum wells and dots
Authors: Aleshkin, VY Biryukov, AV Gaponov, SV Krasil'nik, ZF Mironov, VL
Citation: Vy. Aleshkin et al., STM spectroscopy of local photoconductivity of InGaAs/GaAs heterostructures with quantum wells and dots, IAN FIZ, 64(2), 2000, pp. 366-369
Sub- and super-Poissonian shot noise in single-barrier semiconductor structures
Authors: Aleshkin, VY Reggiani, L Reklaitis, A
Citation: Vy. Aleshkin et al., Sub- and super-Poissonian shot noise in single-barrier semiconductor structures, SEMIC SCI T, 15(11), 2000, pp. 1045-1048
Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure
Authors: Aleshkin, VY Andronov, AA Antonov, AV Gavrilenko, VI Gaponova, DM Krasil'nik, ZF Revin, DG Zvonkov, N Uskova, EA
Citation: Vy. Aleshkin et al., Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure, SEMIC SCI T, 15(11), 2000, pp. 1049-1053
Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
Authors: Aleshkin, VY Bekin, NA Buyanova, MN Murel', AV Zvonkov, BN
Citation: Vy. Aleshkin et al., Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method, SEMICONDUCT, 33(10), 1999, pp. 1133-1138
Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing
Authors: Aleshkin, VY Andronov, AA Antonov, AV Demidov, EV Gavrilenko, VI Revin, DG Zvonkov, BN Zvonkov, NB Uskova, EA
Citation: Vy. Aleshkin et al., Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing, PHYSICA B, 272(1-4), 1999, pp. 139-142
Photoluminescence of nanoislands of germanium in silicon
Authors: Aleshkin, VY Bekin, NA Kalugin, NG Krasilnik, ZF Novikov, AV Postnikov, VV Filatov, DO Seyringer, H
Citation: Vy. Aleshkin et al., Photoluminescence of nanoislands of germanium in silicon, IAN FIZ, 63(2), 1999, pp. 301-306
Emission and absorption of IR radiation in Ge/GeSi quantum wells in lateral electric fields
Authors: Vorobiev, LE Donetsky, DV Zibik, EA Firsov, DA Aleshkin, VY Kuznetsov, OA Orlov, LK
Citation: Le. Vorobiev et al., Emission and absorption of IR radiation in Ge/GeSi quantum wells in lateral electric fields, IAN FIZ, 63(2), 1999, pp. 339-347
Cyclotron resonance and intersubband transitions of holes in strained multiquantum-well heterostructures Ge/GeSi
Authors: Aleshkin, VY Bekin, NA Gavrilenko, VI Erofeeva, IV Krasilnik, ZF Moldavskaya, MD Kuznetsov, OA Yakunin, MV Nikonorov, V Helm, M
Citation: Vy. Aleshkin et al., Cyclotron resonance and intersubband transitions of holes in strained multiquantum-well heterostructures Ge/GeSi, IAN FIZ, 63(2), 1999, pp. 352-358
The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures
Authors: Aleshkin, VY Zvonkov, BN Malkina, IG Chernov, AL Romanov, YA
Citation: Vy. Aleshkin et al., The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures, PHYS LOW-D, 12, 1999, pp. 15-21
Far-infrared spectroscopy of shallow acceptors in strained Ge/GeSi quantumwell heterostructures
Authors: Aleshkin, VY Gavrilenko, VI Erofeeva, IV Korotkov, AL Kozlov, DV Kuznetsov, OA Moldavskaya, MD
Citation: Vy. Aleshkin et al., Far-infrared spectroscopy of shallow acceptors in strained Ge/GeSi quantumwell heterostructures, PHYS ST S-B, 210(2), 1998, pp. 649-653
Risultati: 1-25 |