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Results: 1-14 |
Results: 14
Towards Si1-xGex quantum-well resonant-state terahertz laser
Authors: Altukhov, IV Chirkova, EG Sinis, VP Kagan, MS Gousev, YP Thomas, SG Wang, KL Odnoblyudov, MA Yassievich, IN
Citation: Iv. Altukhov et al., Towards Si1-xGex quantum-well resonant-state terahertz laser, APPL PHYS L, 79(24), 2001, pp. 3909-3911
Far IR radiation of GeSi/Si quantum wells
Authors: Altukhov, IV Kagan, MS Korolev, KA Sinis, VP Tomas, SG Wang, KL
Citation: Iv. Altukhov et al., Far IR radiation of GeSi/Si quantum wells, IAN FIZ, 64(2), 2000, pp. 242-244
Hole transport due to shallow acceptors along boron doped SiGe quantum wells
Authors: Altukhov, IV Kagan, MS Sinis, VP Thomas, SG Wang, KL Blom, A Odnoblyudov, MO
Citation: Iv. Altukhov et al., Hole transport due to shallow acceptors along boron doped SiGe quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 218-220
Terahertz emission of SiGe/Si quantum wells
Authors: Kagan, MS Altukhov, IV Sinis, VP Thomas, SG Wang, KL Chao, KA Yassievich, IN
Citation: Ms. Kagan et al., Terahertz emission of SiGe/Si quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 237-239
Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium
Authors: Altukhov, IV Kagan, MS Korolev, KA Sinis, VP Chirkova, EG Odnoblyudov, MA Yassievich, IN
Citation: Iv. Altukhov et al., Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium, J EXP TH PH, 88(1), 1999, pp. 51-57
Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium
Authors: Altukhov, IV Kagan, MS Gousev, YP Sinis, VP Korolev, KA Olsson, HK Galperin, YM Odnoblyudov, MA Yassievich, IN Chao, KA
Citation: Iv. Altukhov et al., Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium, PHYSICA B, 272(1-4), 1999, pp. 458-460
Lateral transport in boron doped SiGe quantum wells
Authors: Kagan, MS Altukhov, IV Korolev, KA Orlov, DV Sinis, VP Thomas, SG Wang, KL
Citation: Ms. Kagan et al., Lateral transport in boron doped SiGe quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 203-206
Lateral transport in strained SiGe quantum wells doped with boron
Authors: Kagan, MS Altukhov, IV Korolev, KA Orlov, DV Sinis, VP Thomas, SG Wang, KL Yassievich, IN
Citation: Ms. Kagan et al., Lateral transport in strained SiGe quantum wells doped with boron, PHYS ST S-B, 211(1), 1999, pp. 495-499
Acceptor states in boron doped SiGe quantum wells
Authors: Kagan, MS Altukhov, IV Korolev, KA Orlov, DV Sinis, VP Thomas, SG Wang, KL Schmaltz, K Yassievich, IN
Citation: Ms. Kagan et al., Acceptor states in boron doped SiGe quantum wells, IAN FIZ, 63(2), 1999, pp. 359-363
Widely tunable continuous-wave THz laser
Authors: Gousev, YP Altukhov, IV Korolev, KA Sinis, VP Kagan, MS Haller, EE Odnoblyudov, MA Yassievich, IN Chao, KA
Citation: Yp. Gousev et al., Widely tunable continuous-wave THz laser, APPL PHYS L, 75(6), 1999, pp. 757-759
Shallow acceptor states in SiGe quantum wells
Authors: Kagan, MS Altukhov, IV Korolev, KA Orlov, DV Sinis, VP Schmalz, K Thomas, SG Wang, KL Yassievich, IN
Citation: Ms. Kagan et al., Shallow acceptor states in SiGe quantum wells, PHYS ST S-B, 210(2), 1998, pp. 667-670
Long-living excited state of the Te donor in GaP
Authors: Pokrovskii, YE Altukhov, IV Smirnova, OI Khvalkovskii, NA
Citation: Ye. Pokrovskii et al., Long-living excited state of the Te donor in GaP, PHYS ST S-B, 210(2), 1998, pp. 809-813
Competition between long-living and D-(A(+)) states of donors and acceptors in silicon
Authors: Pokrovskii, YE Altukhov, IV Smirnova, OI Khvalkovskii, NA
Citation: Ye. Pokrovskii et al., Competition between long-living and D-(A(+)) states of donors and acceptors in silicon, PHYS ST S-B, 210(2), 1998, pp. 815-819
Mobility edge in nondegenerate semiconductor with random potential of charged impurities
Authors: Kagan, MS Landsberg, EG Zhdanova, NG Altukhov, IV
Citation: Ms. Kagan et al., Mobility edge in nondegenerate semiconductor with random potential of charged impurities, PHYS ST S-B, 210(2), 1998, pp. 891-895
Risultati: 1-14 |