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Results:
1-14
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Results: 14
Authors:
Zymierska, D
Auleytner, J
Choinski, J
Perchuc, L
Godwod, K
Domagala, J
Adamczewska, J
Paszkowicz, W
Reginski, K
Citation: D. Zymierska et al., Structural changes induced by fast nitrogen ions in GaAs single crystals, J ALLOY COM, 328(1-2), 2001, pp. 112-118
Authors:
Zymierska, D
Auleytner, J
Godwod, K
Domagala, J
Datsenko, L
Choinski, J
Citation: D. Zymierska et al., X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions, J ALLOY COM, 328(1-2), 2001, pp. 237-241
Authors:
Klinger, D
Lefeld-Sosnowska, M
Auleytner, J
Zymierska, D
Nowicki, L
Stonert, A
Kwiatkowski, S
Citation: D. Klinger et al., Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal, J ALLOY COM, 328(1-2), 2001, pp. 242-247
Authors:
Borowski, J
Nietubye, R
Auleytner, J
Plugaru, R
Citation: J. Borowski et al., Orthorhombic microdefects in Si crystals, J PHYS D, 34(10), 2001, pp. 1540-1542
Authors:
Zymierska, D
Auleytner, J
Kobiela, T
Dus, R
Citation: D. Zymierska et al., Comparative study of the surface roughness by AFM and GIXR, PHYS ST S-A, 180(2), 2000, pp. 479-485
Authors:
Cobianu, C
Plugaru, R
Nastase, N
Nastase, S
Flueraru, C
Modreanu, M
Adamczevska, J
Paszkowicz, W
Auleytner, J
Cosmin, P
Citation: C. Cobianu et al., Phase and surface roughness evolution for as-deposited LPCVD silicon films, J PHYS IV, 9(P8), 1999, pp. 1083-1090
Authors:
Auleytner, J
Datsenko, L
Klad'ko, V
Machulin, V
Melnyk, V
Prokopenko, I
Bak-Misiuk, J
Misiuk, A
Citation: J. Auleytner et al., Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon, J ALLOY COM, 286(1-2), 1999, pp. 246-249
Authors:
Dmitruk, I
Dmitruk, N
Domagala, J
Klinger, D
Zymierska, D
Auleytner, J
Citation: I. Dmitruk et al., X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching, J ALLOY COM, 286(1-2), 1999, pp. 289-296
Authors:
Dmitruk, I
Mikhailik, T
Zymierska, D
Auleytner, J
Citation: I. Dmitruk et al., Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering, J ALLOY COM, 286(1-2), 1999, pp. 302-308
Authors:
Pelka, JB
Auleytner, J
Domagala, J
Werner, Z
Janik-Czachor, M
Citation: Jb. Pelka et al., Study of near-surface layers modified by ion implantation in Si wafers by grazing incidence X-ray reflectometry, J ALLOY COM, 286(1-2), 1999, pp. 337-342
Authors:
Auleytner, J
Czachor, A
Dobrzynski, L
Citation: J. Auleytner et al., Proceedings of the III International School and Symposium on Physics in Materials Science Modification and Characterization of Materials Using Nuclear Methods - September 13-19, 1998, Jaszowiec, Poland - Preface, ACT PHY P A, 96(1), 1999, pp. 5-6
Authors:
Datsenko, L
Zymierska, D
Auleytner, J
Klinger, D
Machulin, V
Klad'ko, V
Melnik, V
Prokopenko, I
Czosnyka, T
Choinski, J
Citation: L. Datsenko et al., Structure changes in Cz-Si single crystals irradiated with fast oxygen andneon ions, ACT PHY P A, 96(1), 1999, pp. 137-142
Authors:
Klinger, D
Lefeld-Sosnowska, M
Zymierska, D
Auleytner, J
Kozankiewicz, B
Reginski, K
Citation: D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Authors:
Zymierska, D
Klinger, D
Auleytner, J
Czosnyka, T
Datsenko, L
Citation: D. Zymierska et al., Studies of the near-surface layers of silicon crystals implanted with fastions, NUCL INST B, 146(1-4), 1998, pp. 350-355
Risultati:
1-14
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