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Results: 1-25 | 26-27
Results: 1-25/27
PVT-GROWN SINGLE-CRYSTALS OF CD1-XZNXTE (X-LESS-THAN-OR-EQUAL-TO-0.25) AND ZNTE AS SUBSTRATES FOR EPITAXY
Authors: MYCIELSKI A SZADKOWSKI A LUSAKOWSKA E KOWALCZYK L DOMAGALA J BAKMISIUK J WILAMOWSKI Z WITKOWSKA B
Citation: A. Mycielski et al., PVT-GROWN SINGLE-CRYSTALS OF CD1-XZNXTE (X-LESS-THAN-OR-EQUAL-TO-0.25) AND ZNTE AS SUBSTRATES FOR EPITAXY, Acta Physica Polonica. A, 94(3), 1998, pp. 441-445
MBE GROWTH AND PROPERTIES OF GAMNAS(100) FILMS
Authors: SADOWSKI J DOMAGALA J BAKMISIUK J SWIATEK K KANSKI J ILVER L OSCARSSON H
Citation: J. Sadowski et al., MBE GROWTH AND PROPERTIES OF GAMNAS(100) FILMS, Acta Physica Polonica. A, 94(3), 1998, pp. 509-513
ZINC-BLEND MG1-XMNXTE - A NEW DILUTED MAGNETIC SEMICONDUCTOR SYSTEM
Authors: JANIK E DYNOWSKA E BAKMISIUK J WOJTOWICZ T KARCZEWSKI G KOSSUT J STACHOWWOJCIK A TWARDOWSKI A MAC W ANDO K
Citation: E. Janik et al., ZINC-BLEND MG1-XMNXTE - A NEW DILUTED MAGNETIC SEMICONDUCTOR SYSTEM, Journal of crystal growth, 185, 1998, pp. 976-979
ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY
Authors: ZYTKIEWICZ ZR DOMAGALA J BAKMISIUK J DOBOSZ D LESZCZYNSKI M
Citation: Zr. Zytkiewicz et al., ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY, Acta Physica Polonica. A, 92(5), 1997, pp. 1092-1096
STUDY OF SI(111) IMPLANTED WITH AS IONS BY X-RAY-DIFFRACTION AND GRAZING-INCIDENCE METHODS
Authors: PELKA JB GORECKA J AULEYTNER J DOMAGALA J BAKMISIUK J
Citation: Jb. Pelka et al., STUDY OF SI(111) IMPLANTED WITH AS IONS BY X-RAY-DIFFRACTION AND GRAZING-INCIDENCE METHODS, Acta Physica Polonica. A, 91(5), 1997, pp. 905-910
EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES
Authors: BAKMISIUK J DOMAGALA J PASZKOWICZ W TRELA J ZYTKIEWICZ ZR LESZCZYNSKI M REGINSKI K MUSZALSKI J HARTWIG J OHLER M
Citation: J. Bakmisiuk et al., EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES, Acta Physica Polonica. A, 91(5), 1997, pp. 911-915
DEFECT STRUCTURE OF PRESSURE TREATED CZOCHRALSKI-GROWN SILICON INVESTIGATED BY X-RAY TOPOGRAPHY AND DIFFRACTOMETRY
Authors: MISIUK A HARTWIG J PRIEUR E OHLER M BAKMISIUK J DOMAGALA J SURMA B
Citation: A. Misiuk et al., DEFECT STRUCTURE OF PRESSURE TREATED CZOCHRALSKI-GROWN SILICON INVESTIGATED BY X-RAY TOPOGRAPHY AND DIFFRACTOMETRY, Acta Physica Polonica. A, 91(5), 1997, pp. 987-991
PHYSICAL-PROPERTIES OF ALGAAS EPILAYERS SUBJECTED TO HIGH-PRESSURE-HIGH-TEMPERATURE TREATMENT
Authors: SZUSZKIEWICZ W GEBICKI W BAKMISIUK J DOMAGALA J LESZCZYNSKI M HARTWIG J
Citation: W. Szuszkiewicz et al., PHYSICAL-PROPERTIES OF ALGAAS EPILAYERS SUBJECTED TO HIGH-PRESSURE-HIGH-TEMPERATURE TREATMENT, Acta Physica Polonica. A, 91(5), 1997, pp. 1003-1007
INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S BAKMISIUK J DOMAGALA J
Citation: M. Leszczynski et al., INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 585-590
THERMAL-EXPANSION OF GAAS-TE AND ALGAAS-TE AT LOW-TEMPERATURES
Authors: LESZCZYNSKI M PLUZHNIKOV VB CZOPNIK A BAKMISIUK J SLUPINSKI T
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAAS-TE AND ALGAAS-TE AT LOW-TEMPERATURES, Journal of applied physics, 82(9), 1997, pp. 4678-4680
CHARACTERIZATION AND SELECTED PHYSICAL-PROPERTIES OF CDTE MNTE SHORT-PERIOD STRAINED SUPERLATTICES/
Authors: SZUSZKIEWICZ W DYNOWSKA E BAKMISIUK J KARCZEWSKI G WOJTOWICZ T KOSSUT J JOUANNE M
Citation: W. Szuszkiewicz et al., CHARACTERIZATION AND SELECTED PHYSICAL-PROPERTIES OF CDTE MNTE SHORT-PERIOD STRAINED SUPERLATTICES/, Acta Physica Polonica. A, 90(5), 1996, pp. 1090-1094
TRANSFORMATION OF ALGAAS GAAS INTERFACE UNDER HYDROSTATIC-PRESSURE/
Authors: BAKMISIUK J DOMAGALA J TRELA J LESZCZYNSKI M MISIUK A HARTWIG J PRIEUR E
Citation: J. Bakmisiuk et al., TRANSFORMATION OF ALGAAS GAAS INTERFACE UNDER HYDROSTATIC-PRESSURE/, Acta Physica Polonica. A, 89(3), 1996, pp. 405-409
INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS
Authors: BAKMISIUK J LESZCZYNSKI M PASZKOWICZ W DOMAGALA J
Citation: J. Bakmisiuk et al., INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS, Applied physics letters, 69(22), 1996, pp. 3366-3368
ZINCBLENDE MNTE(111) ON BAF2(111) SUBSTRATES FOR OPTICAL MEASUREMENTS
Authors: JANIK E DYNOWSKA E BAKMISIUK J DOMAGALA J KUTROWSKI M WOJTOWICZ T STACHOW A
Citation: E. Janik et al., ZINCBLENDE MNTE(111) ON BAF2(111) SUBSTRATES FOR OPTICAL MEASUREMENTS, Applied physics letters, 68(26), 1996, pp. 3796-3798
LATTICE-CONSTANT OF DOPED SEMICONDUCTOR
Authors: LESZCZYNSKI M LITWINSTASZEWSKA E SUSKI T BAKMISIUK J DOMAGALA J
Citation: M. Leszczynski et al., LATTICE-CONSTANT OF DOPED SEMICONDUCTOR, Acta Physica Polonica. A, 88(5), 1995, pp. 837-840
MBE GROWTH AND CHARACTERIZATION OF CUBIC MNTE(111) ON BAF2 SUBSTRATES
Authors: JANIK E WOJTOWICZ T DYNOWSKA E BAKMISIUK J DOMAGALA J KARCZEWSKI G KOSSUT J
Citation: E. Janik et al., MBE GROWTH AND CHARACTERIZATION OF CUBIC MNTE(111) ON BAF2 SUBSTRATES, Acta Physica Polonica. A, 88(5), 1995, pp. 982-984
CUBIC MNTE - GROWTH BY MOLECULAR-BEAM EPITAXY AND BASIC STRUCTURAL CHARACTERIZATION
Authors: ZAKRZEWSKI AK JANIK E DYNOWSKA E LESZCZYNSKI M KUTROWSKI M WOJTOWICZ T KARCZEWSKI G BAKMISIUK J DOMAGALA J KOSSUT J
Citation: Ak. Zakrzewski et al., CUBIC MNTE - GROWTH BY MOLECULAR-BEAM EPITAXY AND BASIC STRUCTURAL CHARACTERIZATION, Acta Physica Polonica. A, 87(2), 1995, pp. 433-436
STRUCTURAL-PROPERTIES OF CUBIC MNTE LAYERS GROWN BY MBE
Authors: JANIK E DYNOWSKA E BAKMISIUK J LESZCZYNSKI M SZUSZKIEWICZ W WOJTOWICZ T KARCZEWSKI G ZAKRZEWSKI AK KOSSUT J
Citation: E. Janik et al., STRUCTURAL-PROPERTIES OF CUBIC MNTE LAYERS GROWN BY MBE, Thin solid films, 267(1-2), 1995, pp. 74-78
THE OPTIMAL TEMPERATURE PROFILE IN CRYSTAL-GROWTH FROM THE VAPOR
Authors: GRASZA K JANIK E MYCIELSKI A BAKMISIUK J
Citation: K. Grasza et al., THE OPTIMAL TEMPERATURE PROFILE IN CRYSTAL-GROWTH FROM THE VAPOR, Journal of crystal growth, 146(1-4), 1995, pp. 75-79
LATTICE-CONSTANTS AND THERMAL-EXPANSION OF ALXGA1-XAS-TE
Authors: BAKMISIUK J LESZCZYNSKI M DOMAGALA J ZYTKIEWICZ Z
Citation: J. Bakmisiuk et al., LATTICE-CONSTANTS AND THERMAL-EXPANSION OF ALXGA1-XAS-TE, Journal of applied physics, 78(12), 1995, pp. 6994-6998
LATTICE DILATION BY FREE-ELECTRONS IN HEAVILY-DOPED GAAS-SI
Authors: LESZCZYNSKI M BAKMISIUK J DOMAGALA J MUSZALSKI J KANIEWSKA M MARCZEWSKI J
Citation: M. Leszczynski et al., LATTICE DILATION BY FREE-ELECTRONS IN HEAVILY-DOPED GAAS-SI, Applied physics letters, 67(4), 1995, pp. 539-541
COMPOSITION DETERMINATION OF SOME A(II)B(VI) TERNARY SEMICONDUCTORS FROM QUASI-FORBIDDEN REFLECTION INTENSITY
Authors: BAKMISIUK J DOMAGALA J DYNOWSKA E MIOTKOWSKA S PASZKOWICZ W
Citation: J. Bakmisiuk et al., COMPOSITION DETERMINATION OF SOME A(II)B(VI) TERNARY SEMICONDUCTORS FROM QUASI-FORBIDDEN REFLECTION INTENSITY, Acta Physica Polonica. A, 86(4), 1994, pp. 575-578
RAPID STRUCTURE PERFECTION DIAGNOSTICS OF GAAS SINGLE-CRYSTAL BY DIFFRACTION OF WHITE X-RAY-RADIATION
Authors: KHRUPA VI GRIGORYEV DO SKOROKHOD MY DATSENKO LI BAKMISIUK J
Citation: Vi. Khrupa et al., RAPID STRUCTURE PERFECTION DIAGNOSTICS OF GAAS SINGLE-CRYSTAL BY DIFFRACTION OF WHITE X-RAY-RADIATION, Acta Physica Polonica. A, 86(4), 1994, pp. 591-596
COMPARISON OF LATTICE-PARAMETERS OBTAINED FROM AN INTERNAL SILICON MONOCRYSTAL STANDARD
Authors: HARTWIG J BAKMISIUK J BERGER H BRUHL HG OKADA Y GROSSWIG S WOKULSKA K WOLF J
Citation: J. Hartwig et al., COMPARISON OF LATTICE-PARAMETERS OBTAINED FROM AN INTERNAL SILICON MONOCRYSTAL STANDARD, Physica status solidi. a, Applied research, 142(1), 1994, pp. 19-26
APPLICATION OF QUASI-FORBIDDEN REFLECTIONS FOR DETERMINATION OF COMPOSITION OF PSEUDOBINARY SEMICONDUCTORS
Authors: BAKMISIUK J PASZKOWICZ W DOMAGALA J
Citation: J. Bakmisiuk et al., APPLICATION OF QUASI-FORBIDDEN REFLECTIONS FOR DETERMINATION OF COMPOSITION OF PSEUDOBINARY SEMICONDUCTORS, Acta Physica Polonica. A, 84(4), 1993, pp. 681-684
Risultati: 1-25 | 26-27