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Results:
1-14
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Results: 14
Authors:
BEZ R
CANTARELLI D
MOIOLI L
ORTOLANI G
SERVALLI G
VILLA C
DALLABORA M
Citation: R. Bez et al., A NEW ERASING METHOD FOR A SINGLE-VOLTAGE LONG-ENDURANCE FLASH MEMORY, IEEE electron device letters, 19(2), 1998, pp. 37-39
Authors:
PACELLI A
LACAITA AL
SPINELLI A
BEZ R
Citation: A. Pacelli et al., EFFECT OF N2O NITRIDATION ON THE ELECTRICAL-PROPERTIES OF MOS GATE OXIDES, Microelectronics and reliability, 38(2), 1998, pp. 239-242
Authors:
VILLA S
LACAITA AL
PERRON LM
BEZ R
Citation: S. Villa et al., PHYSICALLY-BASED MODEL OF THE EFFECTIVE MOBILITY IN HEAVILY-DOPED N-MOSFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 110-115
Authors:
PERRON L
LACAITA AL
PACELLI A
BEZ R
Citation: L. Perron et al., ELECTRON-MOBILITY IN ULSI MOSFETS - EFFECT OF INTERFACE TRAPS AND OXIDE NITRIDATION, IEEE electron device letters, 18(5), 1997, pp. 235-237
Authors:
SELMI L
GHETTI A
BEZ R
SANGIORGI E
Citation: L. Selmi et al., TRADE-OFFS BETWEEN TUNNELING AND HOT-CARRIER INJECTION IN SHORT-CHANNEL FLOATING-GATE MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 293-296
Authors:
CAPPELLETTI P
BEZ R
CANTARELLI D
NAHMAD D
RAVAZZI L
Citation: P. Cappelletti et al., CAST - AN ELECTRICAL STRESS TEST TO MONITOR SINGLE-BIT FAILURES IN FLASH-EEPROM STRUCTURES, Microelectronics and reliability, 37(3), 1997, pp. 473-481
Authors:
FISCHER B
GHETTI A
SELMI L
BEZ R
SANGIORGI E
Citation: B. Fischer et al., BIAS AND TEMPERATURE-DEPENDENCE OF HOMOGENEOUS HOT-ELECTRON INJECTIONFROM SILICON INTO SILICON DIOXIDE AT LOW VOLTAGES, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 288-296
Authors:
PAVAN P
BEZ R
OLIVO P
ZANONI E
Citation: P. Pavan et al., FLASH MEMORY CELLS - AN OVERVIEW, Proceedings of the IEEE, 85(8), 1997, pp. 1248-1271
Authors:
ESSENI D
SELMI L
SANGIORGI E
BEZ R
RICCO B
Citation: D. Esseni et al., TEMPERATURE-DEPENDENCE OF GATE AND SUBSTRATE CURRENTS IN THE CHE CROSSOVER REGIME, IEEE electron device letters, 16(11), 1995, pp. 506-508
Authors:
SELMI L
SANGIORGI E
BEZ R
Citation: L. Selmi et al., NONLOCAL EFFECTS IN P-MOSFET SUBSTRATE HOT-HOLE INJECTION EXPERIMENTS, IEEE electron device letters, 16(10), 1995, pp. 442-444
Authors:
MOSES F
LEBET JP
BEZ R
Citation: F. Moses et al., APPLICATIONS OF FIELD TESTING TO BRIDGE EVALUATION, Journal of structural engineering, 120(6), 1994, pp. 1745-1762
Authors:
CONCANNON A
MATHEWSON A
PICCININI F
MEI GL
BEZ R
LOMBARDI C
Citation: A. Concannon et al., A MODEL FOR HOT-ELECTRON AND HOT-HOLE INJECTION IN FLASH EEPROM PROGRAMMING, Microelectronics, 25(7), 1994, pp. 469-473
Authors:
SELMI L
FIEGNA C
BEZ R
Citation: L. Selmi et al., CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1677-1679
Authors:
CONCANNON A
KEENEY S
MATHEWSON A
BEZ R
LOMBARDI C
Citation: A. Concannon et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1258-1262
Risultati:
1-14
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