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Results: 1-22 |
Results: 22

Authors: BIANCONI M ALBERTAZZI E CARNERA A LULLI G NIPOTI R SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING ANALYSIS OF VIRGIN 6H-SIC - EXPERIMENTS AND MONTE-CARLO SIMULATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1267-1271

Authors: BIANCONI M
Citation: M. Bianconi, MACROECONOMICS AND THE JAPANESE ECONOMY - YOSHIKAWA,H, Journal of Japanese studies, 24(1), 1998, pp. 160-163

Authors: LEVY P BIANCONI M CORRERA L
Citation: P. Levy et al., WET ETCHING OF AL2O3 FOR SELECTIVE PATTERNING OF MICROSTRUCTURES USING AR-IMPLANTATION AND H3PO4( ION), Journal of the Electrochemical Society, 145(1), 1998, pp. 344-347

Authors: LEVY P NICOLETTI S CORRERA L CERVERA M BIANCONI M BISCARINI F CORTICELLI F GABILLI E
Citation: P. Levy et al., FABRICATION OF STEP-EDGE STRUCTURES ON R-PLANE SAPPHIRE USING A SELECTIVE WET ETCH PROCESS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(8-9), 1997, pp. 1389-1395

Authors: BIANCONI M LULLI G SPALLACCI F ALBERTAZZI E NIPOTI R CARNERA A CELLINI C
Citation: M. Bianconi et al., RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 689-695

Authors: LULLI G ALBERTAZZI E BIANCONI M NIPOTI R CERVERA M CAMERA A CELLINI C
Citation: G. Lulli et al., STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI, Journal of applied physics, 82(12), 1997, pp. 5958-5964

Authors: LARSEN AN ORAIFEARTAIGH C BARKLIE RC HOLM B PRIOLO F FRANZO G LULLI G BIANCONI M NIPOTI R LINDNER JKN MESLI A GROB JJ CRISTIANO F HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218

Authors: BIANCONI M TURNOVSKY SJ
Citation: M. Bianconi et Sj. Turnovsky, INTERNATIONAL EFFECTS OF GOVERNMENT EXPENDITURE IN INTERDEPENDENT ECONOMIES, Canadian journal of economics, 30(1), 1997, pp. 57-84

Authors: NIPOTI R ALBERTAZZI E BIANCONI M LOTTI R LULLI G CERVERA M CARNERA A
Citation: R. Nipoti et al., ION-IMPLANTATION INDUCED SWELLING IN 6H-SIC, Applied physics letters, 70(25), 1997, pp. 3425-3427

Authors: CAPUZZO M BIANCONI M CONTU P PAVONI V GRITTI G
Citation: M. Capuzzo et al., SURVIVAL AND QUALITY-OF-LIFE AFTER INTENSIVE-CARE, Intensive care medicine, 22(9), 1996, pp. 947-953

Authors: NIPOTI R SERVIDORI M BIANCONI M MILITA S
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED [100]SI CRYSTALS - STRAIN BY X-RAY-DIFFRACTOMETRY VERSUS INTERSTITIALS BY RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 64-67

Authors: ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168

Authors: ALBERTAZZI E BIANCONI M LULLI G NIPOTI R CANTIANO M
Citation: E. Albertazzi et al., DIFFERENT METHODS FOR THE DETERMINATION OF DAMAGE PROFILES IN SI FROMRBS-CHANNELING SPECTRA - A COMPARISON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 128-132

Authors: ALBERTAZZI E BIANCONI M LULLI G NIPOTI R CARNERA A CELLINI C
Citation: E. Albertazzi et al., DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 152-155

Authors: PRIOLO F SPINELLA C ALBERTAZZI E BIANCONI M LULLI G NIPOTI R LINDNER JKN MESLI A BARKLIE RC SEALY L HOLM B LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304

Authors: RADICIONI E BENVENUTI C BIANCONI M CORRERA L
Citation: E. Radicioni et al., LASER ANNEALING OF NB COATINGS FOR SUPERCONDUCTING RF ACCELERATING CAVITIES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(1), 1995, pp. 28-35

Authors: BIANCONI M
Citation: M. Bianconi, FISCAL-POLICY IN A SIMPLE 2-COUNTRY DYNAMIC-MODEL, Journal of economic dynamics & control, 19(1-2), 1995, pp. 395-419

Authors: BIANCONI M
Citation: M. Bianconi, ON DYNAMIC REAL TRADE MODELS, Economics letters, 47(1), 1995, pp. 47-52

Authors: BIANCONI M
Citation: M. Bianconi, INFLATION AND THE REAL PRICE OF EQUITIES - THEORY WITH SOME EMPIRICAL-EVIDENCE, Journal of macroeconomics, 17(3), 1995, pp. 495-514

Authors: CARLUCCIO R STOEMENOS J FORTUNATO G MEAKIN DB BIANCONI M
Citation: R. Carluccio et al., MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING, Applied physics letters, 66(11), 1995, pp. 1394-1396

Authors: BIANCONI M NIPOTI R CANTIANO M GASPAROTTO A SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING SPECTRA - SIMULATION OF AS-IMPLANTED SI SAMPLES THROUGH AN EMPIRICAL-FORMULA FOR (100) AXIAL DECHANNELING OF HE IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(4), 1994, pp. 507-511

Authors: BENTINI GG BIANCONI M NIPOTI R
Citation: Gg. Bentini et al., ENERGY-LOSS AND EQUILIBRIUM CHARGE-DISTRIBUTION OF NITROGEN-IONS TRANSMITTED THROUGH THIN SILICON-CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 33-36
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