Authors:
BIANCONI M
ALBERTAZZI E
CARNERA A
LULLI G
NIPOTI R
SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING ANALYSIS OF VIRGIN 6H-SIC - EXPERIMENTS AND MONTE-CARLO SIMULATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1267-1271
Citation: P. Levy et al., WET ETCHING OF AL2O3 FOR SELECTIVE PATTERNING OF MICROSTRUCTURES USING AR-IMPLANTATION AND H3PO4( ION), Journal of the Electrochemical Society, 145(1), 1998, pp. 344-347
Authors:
LEVY P
NICOLETTI S
CORRERA L
CERVERA M
BIANCONI M
BISCARINI F
CORTICELLI F
GABILLI E
Citation: P. Levy et al., FABRICATION OF STEP-EDGE STRUCTURES ON R-PLANE SAPPHIRE USING A SELECTIVE WET ETCH PROCESS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(8-9), 1997, pp. 1389-1395
Authors:
BIANCONI M
LULLI G
SPALLACCI F
ALBERTAZZI E
NIPOTI R
CARNERA A
CELLINI C
Citation: M. Bianconi et al., RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 689-695
Authors:
LULLI G
ALBERTAZZI E
BIANCONI M
NIPOTI R
CERVERA M
CAMERA A
CELLINI C
Citation: G. Lulli et al., STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI, Journal of applied physics, 82(12), 1997, pp. 5958-5964
Citation: M. Bianconi et Sj. Turnovsky, INTERNATIONAL EFFECTS OF GOVERNMENT EXPENDITURE IN INTERDEPENDENT ECONOMIES, Canadian journal of economics, 30(1), 1997, pp. 57-84
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED [100]SI CRYSTALS - STRAIN BY X-RAY-DIFFRACTOMETRY VERSUS INTERSTITIALS BY RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 64-67
Authors:
ORAIFEARTAIGH C
BARKLIE RC
LARSEN AN
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
LINDNER JKN
CRISTIANO F
HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
Authors:
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
CANTIANO M
Citation: E. Albertazzi et al., DIFFERENT METHODS FOR THE DETERMINATION OF DAMAGE PROFILES IN SI FROMRBS-CHANNELING SPECTRA - A COMPARISON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 128-132
Authors:
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
CARNERA A
CELLINI C
Citation: E. Albertazzi et al., DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 152-155
Authors:
PRIOLO F
SPINELLA C
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
LINDNER JKN
MESLI A
BARKLIE RC
SEALY L
HOLM B
LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
Authors:
RADICIONI E
BENVENUTI C
BIANCONI M
CORRERA L
Citation: E. Radicioni et al., LASER ANNEALING OF NB COATINGS FOR SUPERCONDUCTING RF ACCELERATING CAVITIES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(1), 1995, pp. 28-35
Citation: M. Bianconi, INFLATION AND THE REAL PRICE OF EQUITIES - THEORY WITH SOME EMPIRICAL-EVIDENCE, Journal of macroeconomics, 17(3), 1995, pp. 495-514
Authors:
CARLUCCIO R
STOEMENOS J
FORTUNATO G
MEAKIN DB
BIANCONI M
Citation: R. Carluccio et al., MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING, Applied physics letters, 66(11), 1995, pp. 1394-1396
Authors:
BIANCONI M
NIPOTI R
CANTIANO M
GASPAROTTO A
SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING SPECTRA - SIMULATION OF AS-IMPLANTED SI SAMPLES THROUGH AN EMPIRICAL-FORMULA FOR (100) AXIAL DECHANNELING OF HE IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(4), 1994, pp. 507-511
Citation: Gg. Bentini et al., ENERGY-LOSS AND EQUILIBRIUM CHARGE-DISTRIBUTION OF NITROGEN-IONS TRANSMITTED THROUGH THIN SILICON-CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 33-36