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Results: 1-25/225
CHARACTERISTICS OF ALPHA-RADIATION-INDUCED DEEP-LEVEL DEFECTS IN P-TYPE INP GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KHAN A IQBAL MZ QURASHI US YAMAGUCHI M ZAFAR N DADGAR A BIMBERG D
Citation: A. Khan et al., CHARACTERISTICS OF ALPHA-RADIATION-INDUCED DEEP-LEVEL DEFECTS IN P-TYPE INP GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(8), 1998, pp. 4595-4602
LASING IN SUBMONOLAYER INAS ALGAAS STRUCTURES WITHOUT EXTERNAL OPTICAL CONFINEMENT/
Authors: VOLOVIK BV TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV SAKHAROV AV EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM KOPEV PS ALFEROV ZI KOZIN IE BELOUSOV MV BIMBERG D
Citation: Bv. Volovik et al., LASING IN SUBMONOLAYER INAS ALGAAS STRUCTURES WITHOUT EXTERNAL OPTICAL CONFINEMENT/, Technical physics letters, 24(7), 1998, pp. 567-569
OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION
Authors: SHERNYAKOV YM EGOROV AY VOLOVIK BV ZHUKOV AE KOVSH AR LUNEV AV LEDENTSOV NN MAKSIMOV MV SAKHAROV AV USTINOV VM ZHAO Z KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ym. Shernyakov et al., OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION, Technical physics letters, 24(5), 1998, pp. 351-353
FABRICATION OF INAS QUANTUM DOTS ON SILICON
Authors: CIRLIN GE PETROV VN DUBROVSKII VG MASALOV SA GOLUBOK AO KOMYAK NI LEDENTSOV NN ALFEROV ZI BIMBERG D
Citation: Ge. Cirlin et al., FABRICATION OF INAS QUANTUM DOTS ON SILICON, Technical physics letters, 24(4), 1998, pp. 290-292
CARRIER STATISTICS IN QUANTUM-DOT LASERS
Authors: GRUNDMANN M HEITZ R BIMBERG D
Citation: M. Grundmann et al., CARRIER STATISTICS IN QUANTUM-DOT LASERS, Physics of the solid state, 40(5), 1998, pp. 772-774
STRUCTURAL CHARACTERIZATION OF SELF-ORGANIZED NANOSTRUCTURES
Authors: RUVIMOV S LILIENTALWEBER Z WASHBURN J LEDENTSOV NN USTINOV VM SHCHUKIN VA KOPEV PS ALFEROV ZI BIMBERG D
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF SELF-ORGANIZED NANOSTRUCTURES, Physics of the solid state, 40(5), 1998, pp. 781-783
EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS
Authors: KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV LUNEV AV LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ar. Kovsh et al., EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 997-1000
QUANTUM-DOT HETEROSTRUCTURES - FABRICATION, PROPERTIES, LASERS (REVIEW)
Authors: LEDENTSOV NN USTINOV VM SHCHUKIN VA KOPEV PS ALFEROV ZI BIMBERG D
Citation: Nn. Ledentsov et al., QUANTUM-DOT HETEROSTRUCTURES - FABRICATION, PROPERTIES, LASERS (REVIEW), Semiconductors, 32(4), 1998, pp. 343-365
FORMATION OF INAS QUANTUM DOTS IN A GAAS MATRIX DURING GROWTH ON MISORIENTED SUBSTRATES
Authors: TSATSULNIKOV AF VOLOVIK BV LEDENTSOV NN MAKSIMOV MV EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM CHEN C KOPEV PS ALFEROV ZI PETROV VN TSIRLIN GE BIMBERG D
Citation: Af. Tsatsulnikov et al., FORMATION OF INAS QUANTUM DOTS IN A GAAS MATRIX DURING GROWTH ON MISORIENTED SUBSTRATES, Semiconductors, 32(1), 1998, pp. 84-89
NARROW-BAND PHOTORECEIVER OEIC ON INP OPERATING AT 38 GHZ
Authors: ENGEL T STRITTMATTER A PASSENBERG W UMBACH A SCHLAAK W DROGE E SEEGER A STEINGRUBER R MEKONNEN GG UNTERBORSCH G BACH HG BOTTCHER EH BIMBERG D
Citation: T. Engel et al., NARROW-BAND PHOTORECEIVER OEIC ON INP OPERATING AT 38 GHZ, IEEE photonics technology letters, 10(9), 1998, pp. 1298-1300
BURIED INALGAAS-INP WAVE-GUIDES - ETCHING, OVERGROWTH, AND CHARACTERIZATION
Authors: KOLLAKOWSKI S LEMM C STRITTMATTER A BOTTCHER EH BIMBERG D
Citation: S. Kollakowski et al., BURIED INALGAAS-INP WAVE-GUIDES - ETCHING, OVERGROWTH, AND CHARACTERIZATION, IEEE photonics technology letters, 10(1), 1998, pp. 114-116
STRAIN-DRIVEN SELF-ORGANIZATION OF NANOSTRUCTURES ON SEMICONDUCTOR SURFACES
Authors: SHCHUKIN VA BIMBERG D
Citation: Va. Shchukin et D. Bimberg, STRAIN-DRIVEN SELF-ORGANIZATION OF NANOSTRUCTURES ON SEMICONDUCTOR SURFACES, Applied physics A: Materials science & processing, 67(6), 1998, pp. 687-700
RT EXCITON WAVE-GUIDING AND LASING IN SUBMONOLAYER CDSE-(ZN, MG)(S, SE) STRUCTURES
Authors: KRESTNIKOV IL IVANOV SV KOPEV PS LEDENTSOV NN MAXIMOV MV SAKHAROV AV SOROKIN SV ROSENAUER A GERTHSEN D TORRES CMS BIMBERG D ALFEROV ZI
Citation: Il. Krestnikov et al., RT EXCITON WAVE-GUIDING AND LASING IN SUBMONOLAYER CDSE-(ZN, MG)(S, SE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 26-29
EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE
Authors: NAKASHIMA H KATO T MAEHASHI K NISHIDA T INOUE Y TAKEUCHI T INOUE K FISCHER P CHRISTEN J GRUNDMANN M BIMBERG D
Citation: H. Nakashima et al., EFFECTS OF GROWTH INTERRUPTION ON UNIFORMITY OF GAAS QUANTUM WIRES FORMED ON VICINAL GAAS(110) SURFACES BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 229-232
HIGH MAGNETIC-FIELDS PROBING NANOSTRUCTURES - MAGNETO-CONDENSATION INTO QUANTUM DOTS
Authors: VONORTENBERG M UCHIDA K MIURA N HEINRICHSDORFF F BIMBERG D
Citation: M. Vonortenberg et al., HIGH MAGNETIC-FIELDS PROBING NANOSTRUCTURES - MAGNETO-CONDENSATION INTO QUANTUM DOTS, Physica. B, Condensed matter, 246, 1998, pp. 88-92
GROWTH, SPECTROSCOPY, AND LASER APPLICATION OF SELF-ORDERED III-V QUANTUM DOTS
Authors: BIMBERG D GRUNDMANN M LEDENTSOV NN
Citation: D. Bimberg et al., GROWTH, SPECTROSCOPY, AND LASER APPLICATION OF SELF-ORDERED III-V QUANTUM DOTS, MRS bulletin, 23(2), 1998, pp. 31-34
FORMATION OF INSB QUANTUM DOTS IN A GASB MATRIX
Authors: TSATSULNIKOV AF IVANOV SV KOPEV PS KRYGANOVSKII AK LEDENTSOV NN MAXIMOV MV MELTSER BYA NEKLUDOV PV SUVOROVA AA TITKOV AN VOLOVIK BV GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., FORMATION OF INSB QUANTUM DOTS IN A GASB MATRIX, Journal of electronic materials, 27(5), 1998, pp. 414-417
INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX
Authors: ZHUKOV AE USTINOV VM EGOROV AY KOVSH AR TSATSULNIKOV AF MAXIMOV MV LEDENTSOV NN ZAITSEV SV GORDEEV NY KOPCHATOV VI SHERNYAKOV YM KOPEV PS BIMBERG D ALFEROV ZI
Citation: Ae. Zhukov et al., INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX, Journal of electronic materials, 27(3), 1998, pp. 106-109
RT LASING VIA NANOSCALE CDSE ISLANDS IN A (ZN,MG)(S,SE) MATRIX
Authors: KRESTNIKOV IL IVANOV SV KOPEV PS LEDENTSOV NN MAXIMOV MV SAKHAROV AV SOROKIN SV TORRES CMS BIMBERG D ALFEROV ZI
Citation: Il. Krestnikov et al., RT LASING VIA NANOSCALE CDSE ISLANDS IN A (ZN,MG)(S,SE) MATRIX, Journal of electronic materials, 27(2), 1998, pp. 73-76
FORMATION OF INAS QUANTUM DOTS ON A SILICON(100) SURFACE
Authors: CIRLIN GE DUBROVSKII VG PETROV VN POLYAKOV NK KORNEEVA NP DEMIDOV VN GOLUBOK AO MASALOV SA KUROCHKIN DV GORBENKO OM KOMYAK NI USTINOV VM EGOROV AY KOVSH AR MAXIMOV MV TSATSULNIKOV AF VOLOVIK BV ZHUKOV AE KOPEV PS ALFEROV ZI LEDENTSOV NN GRUNDMANN M BIMBERG D
Citation: Ge. Cirlin et al., FORMATION OF INAS QUANTUM DOTS ON A SILICON(100) SURFACE, Semiconductor science and technology (Print), 13(11), 1998, pp. 1262-1265
FORMATION OF SELF-ORGANIZED QUANTUM DOTS AT SEMICONDUCTOR SURFACES
Authors: BIMBERG D SHCHUKIN VA LEDENTSOV NN KROST A HEINRICHSDORFF F
Citation: D. Bimberg et al., FORMATION OF SELF-ORGANIZED QUANTUM DOTS AT SEMICONDUCTOR SURFACES, Applied surface science, 132, 1998, pp. 713-718
CORRELATION OF INGAAS GAAS QUANTUM-DOT AND WETTING LAYER FORMATION/
Authors: TURCK V HEINRICHSDORFF F VEIT M HEITZ R GRUNDMANN M KROST A BIMBERG D
Citation: V. Turck et al., CORRELATION OF INGAAS GAAS QUANTUM-DOT AND WETTING LAYER FORMATION/, Applied surface science, 123, 1998, pp. 352-355
OPTICAL-PROPERTIES OF INALAS QUANTUM DOTS IN AN ALGAAS MATRIX
Authors: TSATSULNIKOV AF EGOROV AY KOPEV PS KOVSH AR LEDENTSOV NN MAXIMOV MV SUVOROVA AA USTINOV VM VOLOVIK BV ZHUKOV AE GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., OPTICAL-PROPERTIES OF INALAS QUANTUM DOTS IN AN ALGAAS MATRIX, Applied surface science, 123, 1998, pp. 381-384
SELF-ORGANIZED DEFECT-FREE INAS GAAS AND INAS/INGAAS/GAAS QUANTUM DOTS WITH HIGH LATERAL DENSITY GROWN BY MOCVD/
Authors: HEINRICHSDORFF F KROST A BIMBERG D KOSOGOV AO WERNER P
Citation: F. Heinrichsdorff et al., SELF-ORGANIZED DEFECT-FREE INAS GAAS AND INAS/INGAAS/GAAS QUANTUM DOTS WITH HIGH LATERAL DENSITY GROWN BY MOCVD/, Applied surface science, 123, 1998, pp. 725-728
LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS
Authors: TSATSULNIKOV AF BELOUSOV MV BERT NA EGOROV AY KOPEV PS KOVSH AR KRESTNIKOV IL LEDENTSOV NN MAXIMOV MV SUVOROVA AA USTINOV VM VOLOVIK BV ZHUKOV AE GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 37-43
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