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Results: 1-25/29
Authors:
ILIAS S
STAMBOULI V
PASCALLON J
BOUCHIER D
NOUET G
Citation: S. Ilias et al., MICROSTRUCTURE AND STRESS INVESTIGATIONS OF CUBIC BORON-NITRIDE THIN-FILMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 391-396
Authors:
GRIGOROV KG
GRIGOROV GI
DRAJEVA L
BOUCHIER D
SPORKEN R
CAUDANO R
Citation: Kg. Grigorov et al., SYNTHESIS AND CHARACTERIZATION OF CONDUCTIVE TITANIUM MONOXIDE FILMS - DIFFUSION OF SILICON IN TITANIUM MONOXIDE FILMS, Vacuum, 51(2), 1998, pp. 153-155
Authors:
GUEDJ C
PORTIER X
HAIRIE A
BOUCHIER D
CALVARIN G
PIRIOU B
GAUTIER B
DUPUY JC
Citation: C. Guedj et al., CARBON SELF-ORGANIZATION IN THE TERNARY SI1-X-YGEXCY ALLOY, Journal of applied physics, 83(10), 1998, pp. 5251-5257
Authors:
BOSSEBOEUF A
DUPEUX M
BOUTRY M
BOUROUINA T
BOUCHIER D
DEBARRE D
Citation: A. Bosseboeuf et al., CHARACTERIZATION OF W FILMS ON SI AND SIO2 SI SUBSTRATES BY X-RAY-DIFFRACTION, AFM AND BLISTER TEST ADHESION MEASUREMENTS/, Microscopy microanalysis microstructures, 8(4-5), 1997, pp. 261-272
Authors:
DJOUADI MA
BOUCHIER D
STAMBOULI V
ILIAS S
Citation: Ma. Djouadi et al., MECHANICAL CHARACTERIZATIONS OF NITRIDE FILMS DEPOSITED BY ION-BEAM BASED TECHNIQUES, Surface & coatings technology, 97(1-3), 1997, pp. 39-44
Authors:
THANH VL
BOUCHIER D
DEBARRE D
Citation: Vl. Thanh et al., FABRICATION OF SIGE QUANTUM DOTS ON A SI(100) SURFACE, Physical review. B, Condensed matter, 56(16), 1997, pp. 10505-10510
Authors:
VINH LT
AUBRYFORTUNA V
ZHENG Y
BOUCHIER D
GUEDJ C
HINCELIN G
Citation: Lt. Vinh et al., UHV-CVD HETEROEPITAXIAL GROWTH OF SI1-XGEX ALLOYS ON SI(100) USING SILANE AND GERMANE, Thin solid films, 294(1-2), 1997, pp. 59-63
Authors:
FINKMAN E
RUCKER H
MEYER F
PRAWER SD
BOUCHIER D
BOULMER J
BODNAR S
REGOLINI JL
Citation: E. Finkman et al., LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES, Thin solid films, 294(1-2), 1997, pp. 118-121
Authors:
GUEDJ C
PORTIER X
HAIRIE A
BOUCHIER D
CALVARIN G
PIRIOU B
Citation: C. Guedj et al., CARBON AND GERMANIUM DISTRIBUTIONS IN SI1-X-YGEXCY LAYERS EPITAXIALLYGROWN ON SI(001) BY RTCVD, Thin solid films, 294(1-2), 1997, pp. 129-132
Authors:
MAMOR M
PERROSSIER JL
AUBRYFORTUNA V
MEYER F
BOUCHIER D
BODNAR S
REGOLINI JL
Citation: M. Mamor et al., FERMI-LEVEL PINNING IN SCHOTTKY DIODES ON IV-IV-SEMICONDUCTORS - EFFECT OF GE-INCORPORATION AND C-INCORPORATION, Thin solid films, 294(1-2), 1997, pp. 141-144
Authors:
GRIGOROV K
SPORKEN R
RIGA J
CAUDANO R
BOUCHIER D
GRIGOROV GI
Citation: K. Grigorov et al., AUGER AND XPS ANALYSIS OF THE TIO SI INTE RFACE/, Le Vide, 52(279), 1996, pp. 121-124
Authors:
GRIGOROV KG
CHAKALOV RA
SPASOV A
BENHOCINE A
BOUCHIER D
KARMANENKO SF
DEDYK AI
Citation: Kg. Grigorov et al., LAYERED STRUCTURES HTSC FERROELECTRIC, PREPARED BY SPUTTERING/, Journal de physique. IV, 6(C3), 1996, pp. 301-307
Authors:
ILIAS S
SENE G
MOLLER P
STAMBOULI V
PASCALLON J
BOUCHIER D
GICQUEL A
TARDIEU A
ANGER E
RAVET MF
Citation: S. Ilias et al., PLANARIZATION OF DIAMOND THIN-FILM SURFACES BY ION-BEAM ETCHING AT GRAZING-INCIDENCE ANGLE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 835-839
Authors:
SENE G
BOUCHIER D
ILIAS S
DJOUADI MA
PASCALLON J
STAMBOULI V
MOLLER P
HUG G
Citation: G. Sene et al., CORRELATION BETWEEN MICROSTRUCTURE AND COLLISIONAL EFFECTS IN CUBIC BORON-NITRIDE SYNTHETHIZED USING IBAD, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 530-534
Authors:
GUEDJ C
BOUCHIER D
BOUCAUD P
HINCELIN G
PORTIER X
LHOIR A
BODNAR S
REGOLINI JL
Citation: C. Guedj et al., STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 286-290
Authors:
FINKMAN E
BOULMER J
BOUCAUD P
GUEDJ C
BOUCHIER D
NUGENT K
PRAWER S
Citation: E. Finkman et al., RAMAN-SPECTROSCOPY OF SI1-X-YGEXCY LAYERS OBTAINED BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 106, 1996, pp. 171-178
Authors:
GUEDJ C
BOULMER J
BOUCHIER D
CLERC C
CALVARIN G
GODET C
CABARROCAS PRI
HOUZE F
MENCARAGLIA D
Citation: C. Guedj et al., BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 102, 1996, pp. 28-32
Authors:
MAMOR M
MEYER F
BOUCHIER D
VIALARET G
FINKMAN E
BODNAR S
REGOLINI JL
Citation: M. Mamor et al., SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION, Applied surface science, 102, 1996, pp. 134-137
Authors:
GRIGOROV GI
GRIGOROV KG
BOUCHIER D
VIGNES JL
LANGERON JP
Citation: Gi. Grigorov et al., SILICON-NITRIDE FILMS PRODUCED BY ION-BEAM-ASSISTED DEPOSITION - BULKAND NEAR-SURFACE COMPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 85-86
Authors:
LETHANH V
AUBRYFORTUNA V
BOUCHIER D
YOUNSI A
HINCELIN G
Citation: V. Lethanh et al., A METASTABLE (ROOT-3X-ROOT-3)R30-DEGREES RECONSTRUCTION OF THE SI(111) SURFACE, INDUCED BY SILICON ADATOMS, Surface science, 369(1-3), 1996, pp. 85-90
Authors:
TATOULIAN M
AREFIKHONSARI F
MABILLEROUGER I
AMOUROUX J
GHEORGIU M
BOUCHIER D
Citation: M. Tatoulian et al., ROLE OF HELIUM PLASMA PRETREATMENT IN THE STABILITY OF THE WETTABILITY, ADHESION, AND MECHANICAL-PROPERTIES OF AMMONIA PLASMA-TREATED POLYMERS - APPLICATION TO THE AL-POLYPROPYLENE SYSTEM, Journal of adhesion science and technology, 9(7), 1995, pp. 923-934
Authors:
BOUCAUD P
GUEDJ C
BOUCHIER D
JULIEN FH
LOURTIOZ JM
BODNAR S
REGOLINI JL
FINKMAN E
Citation: P. Boucaud et al., OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 410-413
Authors:
BOULMER J
BOUCAUD P
GUEDJ C
DEBARRE D
BOUCHIER D
FINKMAN E
PRAWER S
NUGENT K
DESMURLARRE A
GODET C
CABARROCAS PRI
Citation: J. Boulmer et al., REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/, Journal of crystal growth, 157(1-4), 1995, pp. 436-441
Authors:
BOUCHIER D
Citation: D. Bouchier, 'TOUJOURS ESSEX' - A STORY WITHOUT A MORAL, Confrontation, (54-55), 1995, pp. 63-70
Authors:
BOUCAUD P
FRANCIS C
LARRE A
JULIEN FH
LOURTIOZ JM
BOUCHIER D
BODNAR S
REGOLINI JL
Citation: P. Boucaud et al., PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE, Applied physics letters, 66(1), 1995, pp. 70-72