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Results: 1-13 |
Results: 13
OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/
Authors: STOCKER D SCHUBERT EF BOUTROS KS FLYNN JS VAUDO RP PHANSE VM REDWING JM
Citation: D. Stocker et al., OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/, Electronics Letters, 34(4), 1998, pp. 373-375
NI AND TI SCHOTTKY BARRIERS ON N-ALGAN GROWN ON SIC SUBSTRATES
Authors: YU LS QIAO DJ XING QJ LAU SS BOUTROS KS REDWING JM
Citation: Ls. Yu et al., NI AND TI SCHOTTKY BARRIERS ON N-ALGAN GROWN ON SIC SUBSTRATES, Applied physics letters, 73(2), 1998, pp. 238-240
FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/
Authors: STOCKER DA SCHUBERT EF GRIESHABER W BOUTROS KS REDWING JM
Citation: Da. Stocker et al., FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/, Applied physics letters, 73(14), 1998, pp. 1925-1927
SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT
Authors: YU ET DANG XZ YU LS QIAO D ASBECK PM LAU SS SULLIVAN GJ BOUTROS KS REDWING JM
Citation: Et. Yu et al., SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT, Applied physics letters, 73(13), 1998, pp. 1880-1882
PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/
Authors: DANG XZ WANG CD YU ET BOUTROS KS REDWING JM
Citation: Xz. Dang et al., PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/, Applied physics letters, 72(21), 1998, pp. 2745-2747
GROWTH AND CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS
Authors: BEDAIR SM MCINTOSH FG ROBERTS JC PINER EL BOUTROS KS ELMASRY NA
Citation: Sm. Bedair et al., GROWTH AND CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS, Journal of crystal growth, 178(1-2), 1997, pp. 32-44
STRESS-RELAXATION IN TUNGSTEN FILMS BY ION IRRADIATION
Authors: SNOEKS E BOUTROS KS BARONE J
Citation: E. Snoeks et al., STRESS-RELAXATION IN TUNGSTEN FILMS BY ION IRRADIATION, Applied physics letters, 71(2), 1997, pp. 267-269
EFFECT OF HYDROGEN ON THE INDIUM INCORPORATION IN INGAN EPITAXIAL-FILMS
Authors: PINER EL BEHBEHANI MK ELMASRY NA MCINTOSH FG ROBERTS JC BOUTROS KS BEDAIR SM
Citation: El. Piner et al., EFFECT OF HYDROGEN ON THE INDIUM INCORPORATION IN INGAN EPITAXIAL-FILMS, Applied physics letters, 70(4), 1997, pp. 461-463
DIRECT WRITING OF GAAS OPTICAL WAVE-GUIDES BY LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION
Authors: BOUTROS KS ROBERTS JC BEDAIR SM
Citation: Ks. Boutros et al., DIRECT WRITING OF GAAS OPTICAL WAVE-GUIDES BY LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(15), 1996, pp. 2041-2042
GROWTH AND CHARACTERIZATION OF ALINGAN QUATERNARY ALLOYS
Authors: MCINTOSH FG BOUTROS KS ROBERTS JC BEDAIR SM PINER EL ELMASRY NA
Citation: Fg. Mcintosh et al., GROWTH AND CHARACTERIZATION OF ALINGAN QUATERNARY ALLOYS, Applied physics letters, 68(1), 1996, pp. 40-42
HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY
Authors: BOUTROS KS MCINTOSH FG ROBERTS JC BEDAIR SM PINER EL ELMASRY NA
Citation: Ks. Boutros et al., HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY, Applied physics letters, 67(13), 1995, pp. 1856-1858
HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR MANUFACTURED ON GAAS BY LOW-TEMPERATURE PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BOUTROS KS ROBERTS JC BEDAIR SM CARRUTHERS TF FRANKEL MY
Citation: Ks. Boutros et al., HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR MANUFACTURED ON GAAS BY LOW-TEMPERATURE PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(26), 1995, pp. 3651-3653
LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: ROBERTS JC BOUTROS KS BEDAIR SM LOOK DC
Citation: Jc. Roberts et al., LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(18), 1994, pp. 2397-2399
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