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Results: 1-12 |
Results: 12
APPLICATION OF IN-SITU REFLECTANCE MONITORING TO MOLECULAR-BEAM EPITAXY OF VERTICAL-CAVITY STRUCTURES
Authors: KLEM JF BREILAND WG FRITZ IJ DRUMMOND TJ LEE SR
Citation: Jf. Klem et al., APPLICATION OF IN-SITU REFLECTANCE MONITORING TO MOLECULAR-BEAM EPITAXY OF VERTICAL-CAVITY STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1498-1501
GROWTH STUDY OF ALGAAS USING DIMETHYLETHYLAMINE ALANE AS THE ALUMINUMPRECURSOR
Authors: HOU HQ BREILAND WG HAMMONS BE BIEFELD RM BAUCOM KC STALL RA
Citation: Hq. Hou et al., GROWTH STUDY OF ALGAAS USING DIMETHYLETHYLAMINE ALANE AS THE ALUMINUMPRECURSOR, Journal of electronic materials, 26(10), 1997, pp. 1178-1183
TERTIARYBUTYLARSINE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTHOF HIGH-PURITY, HIGH UNIFORMITY FILMS
Authors: CHUI HC BIEFELD RM HAMMONS BE BREILAND WG BRENNAN TM JONES ED MOFFAT HK KIM MH GRODZINSKI P CHANG KH LEE HC
Citation: Hc. Chui et al., TERTIARYBUTYLARSINE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTHOF HIGH-PURITY, HIGH UNIFORMITY FILMS, Journal of electronic materials, 26(1), 1997, pp. 37-42
IN-SITU PRE-GROWTH CALIBRATION USING REFLECTANCE AS A CONTROL STRATEGY FOR MOCVD FABRICATION OF DEVICE STRUCTURES
Authors: BREILAND WG HOU HQ CHUI HC HAMMONS BE
Citation: Wg. Breiland et al., IN-SITU PRE-GROWTH CALIBRATION USING REFLECTANCE AS A CONTROL STRATEGY FOR MOCVD FABRICATION OF DEVICE STRUCTURES, Journal of crystal growth, 174(1-4), 1997, pp. 564-571
HIGHLY UNIFORM AND REPRODUCIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH IN-SITU REFLECTOMETRY
Authors: HOU HQ CHUI HC CHOQUETTE KD HAMMONS BE BREILAND WG
Citation: Hq. Hou et al., HIGHLY UNIFORM AND REPRODUCIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH IN-SITU REFLECTOMETRY, IEEE photonics technology letters, 8(10), 1996, pp. 1285-1287
HIGH-PURITY GAAS AND ALGAAS GROWN USING TERTIARYBUTYLARSINE, TRIMETHYLALUMINUM, AND TRIMETHYLGALLIUM
Authors: BIEFELD RM CHUI HC HAMMONS BE BREILAND WG BRENNAN TM JONES ED KIM MH GRODZINSKI P CHANG KH LEE HC
Citation: Rm. Biefeld et al., HIGH-PURITY GAAS AND ALGAAS GROWN USING TERTIARYBUTYLARSINE, TRIMETHYLALUMINUM, AND TRIMETHYLGALLIUM, Journal of crystal growth, 163(3), 1996, pp. 212-219
A VIRTUAL INTERFACE METHOD FOR EXTRACTING GROWTH-RATES AND HIGH-TEMPERATURE OPTICAL-CONSTANTS FROM THIN SEMICONDUCTOR-FILMS USING IN-SITU NORMAL INCIDENCE REFLECTANCE
Authors: BREILAND WG KILLEEN KP
Citation: Wg. Breiland et Kp. Killeen, A VIRTUAL INTERFACE METHOD FOR EXTRACTING GROWTH-RATES AND HIGH-TEMPERATURE OPTICAL-CONSTANTS FROM THIN SEMICONDUCTOR-FILMS USING IN-SITU NORMAL INCIDENCE REFLECTANCE, Journal of applied physics, 78(11), 1995, pp. 6726-6736
IN-SITU SPECTRAL REFLECTANCE MONITORING OF III-V EPITAXY
Authors: KILLEEN KP BREILAND WG
Citation: Kp. Killeen et Wg. Breiland, IN-SITU SPECTRAL REFLECTANCE MONITORING OF III-V EPITAXY, Journal of electronic materials, 23(2), 1994, pp. 179-183
LARGE-AREA, PRODUCTION MOCVD ROTATING-DISK REACTOR DEVELOPMENT AND CHARACTERISTICS
Authors: TOMPA GS BREILAND WG GURARY A ZAWADZKI PA EVANS GH ESHERICK P KROLL B STALL RA
Citation: Gs. Tompa et al., LARGE-AREA, PRODUCTION MOCVD ROTATING-DISK REACTOR DEVELOPMENT AND CHARACTERISTICS, Microelectronics, 25(8), 1994, pp. 757-765
LASER-INDUCED FLUORESCENCE MEASUREMENTS AND KINETIC-ANALYSIS OF SI ATOM FORMATION IN A ROTATING-DISK CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: HO P COLTRIN ME BREILAND WG
Citation: P. Ho et al., LASER-INDUCED FLUORESCENCE MEASUREMENTS AND KINETIC-ANALYSIS OF SI ATOM FORMATION IN A ROTATING-DISK CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of physical chemistry, 98(40), 1994, pp. 10138-10147
DESIGN AND OPERATING CHARACTERISTICS OF A METALORGANIC VAPOR-PHASE EPITAXY PRODUCTION SCALE, VERTICAL, HIGH-SPEED, ROTATING-DISK REACTOR
Authors: TOMPA GS ZAWADZKI PA MOY K MCKEE M THOMPSON AG GURARY AI WOLAK E ESHERICK P BREILAND WG EVANS GH BULITKA N HENNESSY J MOORE CJL
Citation: Gs. Tompa et al., DESIGN AND OPERATING CHARACTERISTICS OF A METALORGANIC VAPOR-PHASE EPITAXY PRODUCTION SCALE, VERTICAL, HIGH-SPEED, ROTATING-DISK REACTOR, Journal of crystal growth, 145(1-4), 1994, pp. 655-661
TEMPERATURE-DEPENDENCE OF THE REACTIVITY OF OH(X(2)PI) WITH OXIDIZED SILICON-NITRIDE AND PMMA FILM SURFACES
Authors: FISHER ER HO P BREILAND WG BUSS RJ
Citation: Er. Fisher et al., TEMPERATURE-DEPENDENCE OF THE REACTIVITY OF OH(X(2)PI) WITH OXIDIZED SILICON-NITRIDE AND PMMA FILM SURFACES, Journal of physical chemistry, 97(40), 1993, pp. 10287-10294
Risultati: 1-12 |