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Results: 1-25 | 26-39
Results: 1-25/39
ON THE IMPROVEMENT IN THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: CHEN WM BUYANOVA IA POZINA G MONEMAR B NI WX HANSSON GV
Citation: Wm. Chen et al., ON THE IMPROVEMENT IN THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1928-1932
PROPERTIES OF ER-RELATED EMISSION IN IN-SITU DOPED SI EPILAYERS GROWNBY MOLECULAR-BEAM EPITAXY
Authors: BUYANOVA IA CHEN WM POZINA G NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., PROPERTIES OF ER-RELATED EMISSION IN IN-SITU DOPED SI EPILAYERS GROWNBY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1732-1736
INCORPORATION AND LUMINESCENCE PROPERTIES OF ER2O3 AND ERF3 DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: NI WX JOELSSON KB DU CX POZINA G BUYANOVA IA CHENA WM HANSSON GV MONEMAR B
Citation: Wx. Ni et al., INCORPORATION AND LUMINESCENCE PROPERTIES OF ER2O3 AND ERF3 DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 223-227
EFFECTS OF DEFECT SCATTERING ON THE PHOTOLUMINESCENCE OF EXCITON-POLARITONS IN N-GAN
Authors: BUYANOVA IA BERGMAN JP MONEMAR B AMANO H AKASAKI I WYSMOLEK A LOMIAK P BARANOWSKI JM PAKULA K STEPNIEWSKI R KORONA KP GRZEGORY I BOCKOWSKI M POROWSKI S
Citation: Ia. Buyanova et al., EFFECTS OF DEFECT SCATTERING ON THE PHOTOLUMINESCENCE OF EXCITON-POLARITONS IN N-GAN, Solid state communications, 105(8), 1998, pp. 497-501
PHOTOLUMINESCENCE OF GAN - EFFECT OF ELECTRON-IRRADIATION
Authors: BUYANOVA IA WAGNER M CHEN WM MONEMAR B LINDSTROM JL AMANO H AKASAKI I
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF GAN - EFFECT OF ELECTRON-IRRADIATION, Applied physics letters, 73(20), 1998, pp. 2968-2970
PHOTOLUMINESCENCE OF EXCITON-POLARITONS IN GAN
Authors: BUYANOVA IA BERGMAN JP MONEMAR B AMANO H AKASAKI I
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF EXCITON-POLARITONS IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 130-133
ELECTRONIC-STRUCTURE AND TEMPERATURE-DEPENDENCE OF EXCITONS IN GAN
Authors: MONEMAR B BUYANOVA IA BERGMAN JP AMANO H AKASAKI I
Citation: B. Monemar et al., ELECTRONIC-STRUCTURE AND TEMPERATURE-DEPENDENCE OF EXCITONS IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 172-175
SILICON-BASED STRUCTURES FOR IR LIGHT-EMISSION
Authors: HANSSON GV NI WX JOELSSON KB BUYANOVA IA
Citation: Gv. Hansson et al., SILICON-BASED STRUCTURES FOR IR LIGHT-EMISSION, Physica scripta. T, T69, 1997, pp. 60-64
STRONG EFFECTS OF CARRIER CONCENTRATION ON THE FERMI-EDGE SINGULARITYIN MODULATION-DOPED INP INXGA1-XAS HETEROSTRUCTURES/
Authors: BUYANOVA IA LUNDSTROM T BUYANOV AV CHEN WM BI WG TU CW
Citation: Ia. Buyanova et al., STRONG EFFECTS OF CARRIER CONCENTRATION ON THE FERMI-EDGE SINGULARITYIN MODULATION-DOPED INP INXGA1-XAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(11), 1997, pp. 7052-7058
THE EXCITONIC BANDGAP OF GAN - DEPENDENCE ON SUBSTRATE
Authors: MONEMAR B BERGMAN JP BUYANOVA IA AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: B. Monemar et al., THE EXCITONIC BANDGAP OF GAN - DEPENDENCE ON SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 239-241
MECHANISM FOR THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURESGROWN BY MOLECULAR-BEAM EPITAXY - ROLE OF NONRADIATIVE DEFECTS/
Authors: BUYANOVA IA CHEN WM POZINA G MONEMAR B NI WX
Citation: Ia. Buyanova et al., MECHANISM FOR THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURESGROWN BY MOLECULAR-BEAM EPITAXY - ROLE OF NONRADIATIVE DEFECTS/, Applied physics letters, 71(25), 1997, pp. 3676-3678
POSTGROWTH HYDROGEN TREATMENTS OF NONRADIATIVE DEFECTS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI
Authors: CHEN WM BUYANOVA IA NI WX HANSSON GV MONEMAR B
Citation: Wm. Chen et al., POSTGROWTH HYDROGEN TREATMENTS OF NONRADIATIVE DEFECTS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI, Applied physics letters, 70(3), 1997, pp. 369-371
ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/
Authors: NI WX JOELSSON KB DU CX BUYANOVA IA POZINA G CHEN WM HANSSON GV MONEMAR B CARDENAS J SVENSSON BG
Citation: Wx. Ni et al., ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/, Applied physics letters, 70(25), 1997, pp. 3383-3385
SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS
Authors: BUYANOVA IA GORODETSKII IY KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK MELNIK TN RARENKO IM
Citation: Ia. Buyanova et al., SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS, Semiconductors, 30(8), 1996, pp. 797-801
PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON
Authors: BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 100-103
IMPORTANT DEFECT ASPECTS IN OPTOELECTRONIC APPLICATIONS OF SI- AND SIGE SI-HETEROSTRUCTURES/
Authors: CHEN WM BUYANOVA IA HENRY A NI WX HANSSON GV MONEMAR B
Citation: Wm. Chen et al., IMPORTANT DEFECT ASPECTS IN OPTOELECTRONIC APPLICATIONS OF SI- AND SIGE SI-HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 279-282
INFLUENCE OF GROWTH-CONDITIONS ON THE FORMATION OF DEEP PHOTOLUMINESCENCE BANDS IN MBE-GROWN SI LAYERS AND SIGE SI QUANTUM STRUCTURES/
Authors: BUYANOVA IA CHEN WM HENRY A NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., INFLUENCE OF GROWTH-CONDITIONS ON THE FORMATION OF DEEP PHOTOLUMINESCENCE BANDS IN MBE-GROWN SI LAYERS AND SIGE SI QUANTUM STRUCTURES/, Applied surface science, 102, 1996, pp. 293-297
INTENSE PHOTOLUMINESCENCE OBSERVED IN MODULATION-DOPED SI SIGE QUANTUM-WELL STRUCTURES/
Authors: NI WX BUYANOVA IA HENRY A CHEN WM JOELSSON KB HANSSON GV MONEMAR B
Citation: Wx. Ni et al., INTENSE PHOTOLUMINESCENCE OBSERVED IN MODULATION-DOPED SI SIGE QUANTUM-WELL STRUCTURES/, Applied surface science, 102, 1996, pp. 298-302
FERMI-EDGE SINGULARITY IN P-TYPE MODULATION-DOPED SIGE QUANTUM-WELLS
Authors: BUYANOVA IA CHEN WM HENRY A NI WX HANSSON GV
Citation: Ia. Buyanova et al., FERMI-EDGE SINGULARITY IN P-TYPE MODULATION-DOPED SIGE QUANTUM-WELLS, Physical review. B, Condensed matter, 53(4), 1996, pp. 1701-1704
THERMALLY ACTIVATED INTERSUBBAND AND HOPPING TRANSPORT IN CENTER-DOPED P-TYPE GAAS ALXGA1-XAS QUANTUM-WELLS/
Authors: BUYANOV AV FERREIRA AC SODERSTROM E BUYANOVA IA HOLTZ PO SERNELIUS B MONEMAR B SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Av. Buyanov et al., THERMALLY ACTIVATED INTERSUBBAND AND HOPPING TRANSPORT IN CENTER-DOPED P-TYPE GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1357-1361
PHOTOLUMINESCENCE OF THE 2-DIMENSIONAL HOLE GAS IN P-TYPE DELTA-DOPEDSI LAYERS
Authors: BUYANOVA IA CHEN WM HENRY A NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF THE 2-DIMENSIONAL HOLE GAS IN P-TYPE DELTA-DOPEDSI LAYERS, Physical review. B, Condensed matter, 53(15), 1996, pp. 9587-9590
POLARIZATION SPECTROSCOPY OF LUMINESCENCE EXCITATION AS THE METHOD FOR CONTROL OF ELASTIC PRESSURES IN GAAS EPITAXIAL LAYERS
Authors: BUYANOVA IA OSTAPENKO SS SAVCHUK AU
Citation: Ia. Buyanova et al., POLARIZATION SPECTROSCOPY OF LUMINESCENCE EXCITATION AS THE METHOD FOR CONTROL OF ELASTIC PRESSURES IN GAAS EPITAXIAL LAYERS, Zurnal tehniceskoj fiziki, 66(1), 1996, pp. 79-84
OPTICAL-PROPERTIES OF BORON MODULATION-DOPED SIGE QUANTUM-WELLS AND SI THIN-FILMS
Authors: BUYANOVA IA CHEN WM HENRY A NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., OPTICAL-PROPERTIES OF BORON MODULATION-DOPED SIGE QUANTUM-WELLS AND SI THIN-FILMS, Solid-state electronics, 40(1-8), 1996, pp. 53-57
INTRINSIC DOPING - A NEW APPROACH FOR N-TYPE MODULATION DOPING IN INP-BASED HETEROSTRUCTURES
Authors: CHEN WM BUYANOVA IA BUYANOV AV LUNDSTROM T BI WG TU CW
Citation: Wm. Chen et al., INTRINSIC DOPING - A NEW APPROACH FOR N-TYPE MODULATION DOPING IN INP-BASED HETEROSTRUCTURES, Physical review letters, 77(13), 1996, pp. 2734-2737
INTRINSIC OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN ON SIC SUBSTRATES- EFFECT OF THE BUILT-IN STRAIN
Authors: BUYANOVA IA BERGMAN JP MONEMAR B AMANO H AKASAKI I
Citation: Ia. Buyanova et al., INTRINSIC OPTICAL-PROPERTIES OF GAN EPILAYERS GROWN ON SIC SUBSTRATES- EFFECT OF THE BUILT-IN STRAIN, Applied physics letters, 69(9), 1996, pp. 1255-1257
Risultati: 1-25 | 26-39