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Results: 1-21 |
Results: 21
Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures
Authors: Godlewski, M Goldys, EM Butcher, KSA Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures, PHYS ST S-B, 228(1), 2001, pp. 179-182
Step-like photoluminescence dynamics in field-effect structures containingquantum dots
Authors: Korona, KP Babinski, A Kuhl, J Baranowski, JM Leon, R
Citation: Kp. Korona et al., Step-like photoluminescence dynamics in field-effect structures containingquantum dots, PHYS ST S-B, 227(2), 2001, pp. 605-612
Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
Authors: Wruck, D Lorenz, K Vianden, R Reinhold, B Mahnke, HE Baranowski, JM Pakula, K Parthier, L Henneberger, F
Citation: D. Wruck et al., Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films, SEMIC SCI T, 16(11), 2001, pp. L77-L80
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer
Authors: Godlewski, M Goldys, EM Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer, APPL SURF S, 177(1-2), 2001, pp. 22-31
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205
Authors: Oila, J Ranki, V Kivioja, J Saarinen, K Hautojarvi, P Likonen, J Baranowski, JM Pakula, K Suski, T Leszczynski, M Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap
Authors: Babinski, A Jasinski, J Bozek, R Szepielow, A Baranowski, JM
Citation: A. Babinski et al., Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap, APPL PHYS L, 79(16), 2001, pp. 2576-2578
Electroluminescence from a forward-biased Schottky barrier diode on modulation Si delta-doped GaAs/InGaAs/AlGaAs heterostructure
Authors: Babinski, A Witczak, P Twardowski, A Baranowski, JM
Citation: A. Babinski et al., Electroluminescence from a forward-biased Schottky barrier diode on modulation Si delta-doped GaAs/InGaAs/AlGaAs heterostructure, APPL PHYS L, 78(25), 2001, pp. 3992-3994
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight
Authors: Clerjaud, B Cote, D Lebkiri, A Naud, C Baranowski, JM Pakula, K Wasik, D Suski, T
Citation: B. Clerjaud et al., Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight, PHYS REV B, 61(12), 2000, pp. 8238-8241
Characterization of InGaN/GaN heterostructures by means of RBS/channeling
Authors: Nowicki, L Ratajczak, R Stonert, A Turos, A Baranowski, JM Banasik, R Pakula, K
Citation: L. Nowicki et al., Characterization of InGaN/GaN heterostructures by means of RBS/channeling, NUCL INST B, 161, 2000, pp. 539-543
The effect of electron occupation on the photoluminescence from the self-organised InGaAs/GaAs quantum dots
Authors: Babinski, A Baranowski, JM
Citation: A. Babinski et Jm. Baranowski, The effect of electron occupation on the photoluminescence from the self-organised InGaAs/GaAs quantum dots, PHYS ST S-A, 178(1), 2000, pp. 313-316
Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Authors: Babinski, A Siwiec-Matuszyk, J Baranowski, JM Li, G Jagadish, C
Citation: A. Babinski et al., Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy, APPL PHYS L, 77(7), 2000, pp. 999-1001
Polarised magnetoluminescence of excitons in homoepitaxial GaN layers
Authors: Wysmolek, A Potemski, M Stepniewski, R Lusakowski, J Pakula, K Baranowski, JM Martinez, G Wyder, P Grzegory, I Porowski, S
Citation: A. Wysmolek et al., Polarised magnetoluminescence of excitons in homoepitaxial GaN layers, PHYS ST S-B, 216(1), 1999, pp. 11-15
Excitonic thermalization and recombination in homoepitaxial gallium nitride
Authors: Korona, KP Kuhl, J Baranowski, JM Porowski, S
Citation: Kp. Korona et al., Excitonic thermalization and recombination in homoepitaxial gallium nitride, PHYS ST S-B, 216(1), 1999, pp. 85-89
Emission due to exciton scattering by LO-phonons in gallium nitride
Authors: Wojdak, M Wysmolek, A Pakula, K Baranowski, JM
Citation: M. Wojdak et al., Emission due to exciton scattering by LO-phonons in gallium nitride, PHYS ST S-B, 216(1), 1999, pp. 95-99
Temporally and spatially resolved spectroscopy of GaN
Authors: Korona, KP Kuhl, J Baranowski, JM
Citation: Kp. Korona et al., Temporally and spatially resolved spectroscopy of GaN, PHYS ST S-B, 215(1), 1999, pp. 53-58
Symmetry of excitons in GaN
Authors: Stepniewski, R Potemski, M Wysmolek, A Pakula, K Baranowski, JM Lusakowski, J Grzegory, I Porowski, S Martinez, G Wyder, P
Citation: R. Stepniewski et al., Symmetry of excitons in GaN, PHYS REV B, 60(7), 1999, pp. 4438-4441
Localized vibrational modes of carbon-hydrogen complexes in GaN
Authors: Manasreh, MO Baranowski, JM Pakula, K Jiang, HX Lin, JY
Citation: Mo. Manasreh et al., Localized vibrational modes of carbon-hydrogen complexes in GaN, APPL PHYS L, 75(5), 1999, pp. 659-661
Electron effective mass in hexagonal GaN
Authors: Witowski, AM Pakula, K Baranowski, JM Sadowski, ML Wyder, P
Citation: Am. Witowski et al., Electron effective mass in hexagonal GaN, APPL PHYS L, 75(26), 1999, pp. 4154-4155
Electroreflectance bias-wavelength mapping of the modulation Si delta-doped pseudomorphic GaAs/InGaAs/AlGaAs structure
Authors: Tomaszewicz, T Babinski, A Suska, D Baranowski, JM Tomaszewicz, A
Citation: T. Tomaszewicz et al., Electroreflectance bias-wavelength mapping of the modulation Si delta-doped pseudomorphic GaAs/InGaAs/AlGaAs structure, APPL PHYS L, 75(14), 1999, pp. 2088-2090
Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields
Authors: Stepniewski, R Wysmolek, A Potemski, M Lusakowski, J Korona, K Pakula, K Baranowski, JM Martinez, G Wyder, P Grzegory, I Porowski, S
Citation: R. Stepniewski et al., Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields, PHYS ST S-B, 210(2), 1998, pp. 373-383
Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs
Authors: Trautman, P Baj, M Baranowski, JM
Citation: P. Trautman et al., Hydrostatic pressure and uniaxial stress in investigations of the EL2 defect in GaAs, SEM SEMIMET, 54, 1998, pp. 427-455
Risultati: 1-21 |