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Results:
1-14
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Results: 14
Authors:
Phan, AV
Kaplan, T
Gray, LJ
Adalsteinsson, D
Sethian, JA
Barvosa-Carter, W
Aziz, MJ
Citation: Av. Phan et al., Modelling a growth instability in a stressed solid, MODEL SIM M, 9(4), 2001, pp. 309-325
Authors:
Yang, MJ
Meyer, JR
Bewley, WW
Felix, CL
Vurgaftman, I
Barvosa-Carter, W
Whitman, LJ
Bartolo, RE
Stokes, DW
Lee, H
Martinelli, RU
Citation: Mj. Yang et al., Type-II antimonide quantum wells for mid-infrared lasers, OPT MATER, 17(1-2), 2001, pp. 179-183
Authors:
Barvosa-Carter, W
Twigg, ME
Yang, MJ
Whitman, LJ
Citation: W. Barvosa-carter et al., Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311, PHYS REV B, 6324(24), 2001, pp. 5311
Authors:
Nosho, BZ
Shanabrook, BV
Bennett, BR
Barvosa-Carter, W
Weinberg, WH
Whitman, LJ
Citation: Bz. Nosho et al., Initial stages of Sb-2 deposition on InAs(001), SURF SCI, 478(1-2), 2001, pp. 1-8
Authors:
Barvosa-Carter, W
Aziz, MJ
Citation: W. Barvosa-carter et Mj. Aziz, Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si, APPL PHYS L, 79(3), 2001, pp. 356-358
Authors:
Zinck, JJ
Ross, RS
Owen, JHG
Barvosa-Carter, W
Grosse, F
Ratsch, C
Citation: Jj. Zinck et al., In situ threshold photoemission yields correlated to surface reconstructions of InAs (001), APPL PHYS L, 79(15), 2001, pp. 2354-2356
Authors:
Bracker, AS
Nosho, BZ
Barvosa-Carter, W
Whitman, LJ
Bennett, BR
Shanabrook, BV
Culbertson, JC
Citation: As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
Authors:
Ratsch, C
Barvosa-Carter, W
Grosse, F
Owen, JHG
Zinck, JJ
Citation: C. Ratsch et al., Surface reconstructions for InAs(001) studied with density-functional theory and STM, PHYS REV B, 62(12), 2000, pp. R7719-R7722
Authors:
Nosho, BZ
Barvosa-Carter, W
Yang, MJ
Bennett, BR
Whitman, LJ
Citation: Bz. Nosho et al., Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures, SURF SCI, 465(3), 2000, pp. 361-371
Authors:
Barvosa-Carter, W
Bracker, AS
Culbertson, JC
Nosho, BZ
Shanabrook, BV
Whitman, LJ
Kim, H
Modine, NA
Kaxiras, E
Citation: W. Barvosa-carter et al., Structure of III-Sb(001) growth surfaces: The role of heterodimers, PHYS REV L, 84(20), 2000, pp. 4649-4652
Authors:
Sage, JF
Barvosa-Carter, W
Aziz, MJ
Citation: Jf. Sage et al., Morphological instability of growth fronts due to stress-induced mobility variations, APPL PHYS L, 77(4), 2000, pp. 516-518
Authors:
Owen, JHG
Barvosa-Carter, W
Zinck, JJ
Citation: Jhg. Owen et al., Growth oscillation decay rates for control of III-V molecular beam epitaxynear stoichiometry, APPL PHYS L, 76(21), 2000, pp. 3070-3072
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bracker, AS
Magno, R
Bennett, BR
Culbertson, JC
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bennett, BR
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition, APPL PHYS L, 74(12), 1999, pp. 1704-1706
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