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Authors:
El-Yadouni, A
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Boudrioua, A
Thevenin, P
Bath, A
Loulergue, JC
Citation: A. El-yadouni et al., Investigation of the optical and electro-optical properties of hexagonal boron nitride thin films deposited by PECVD technique, OPT MATER, 17(1-2), 2001, pp. 319-322
Authors:
Ahaitouf, A
Bath, A
Thevenin, P
Abarkan, E
Citation: A. Ahaitouf et al., Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity, MAT SCI E B, 77(1), 2000, pp. 67-72
Citation: A. Ahaitouf et al., On the determination of interface state density in n-InP Schottky structures by current-voltage measurements - Comparison with DLTS results, SOL ST ELEC, 44(3), 2000, pp. 515-520
Citation: A. Koukab et al., Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures, MICROELEC J, 31(8), 2000, pp. 647-651
Authors:
Boudiombo, J
Loulergue, JC
Bath, A
Thevenin, P
Citation: J. Boudiombo et al., Electro-optical characterization of h-BN thin film waveguides by prism coupling technique, MAT SCI E B, 59(1-3), 1999, pp. 244-247
Citation: A. Lindroth et A. Bath, Assessment of regional willow coppice yield in Sweden on basis of water availability, FOREST ECOL, 121(1-2), 1999, pp. 57-65
Citation: A. Koukab et al., Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structures, MICROEL ENG, 49(3-4), 1999, pp. 211-216
Citation: A. Ahaitouf et A. Bath, Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures, THIN SOL FI, 342(1-2), 1999, pp. 136-141
Authors:
Koukab, A
Hoffmann, A
Bath, A
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Citation: A. Koukab et al., A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors, SOL ST ELEC, 43(3), 1999, pp. 641-644