AAAAAA

   
Results: 1-13 |
Results: 13
Photoluminescence from(Si/SiO2)(n) superlattices and their use as emittersin [SiO2/Si](n) SiO2[Si/SiO2](m) microcavities
Authors: Pucker, G Bellutti, P Pavesi, L
Citation: G. Pucker et al., Photoluminescence from(Si/SiO2)(n) superlattices and their use as emittersin [SiO2/Si](n) SiO2[Si/SiO2](m) microcavities, SPECT ACT A, 57(10), 2001, pp. 2019-2028
(Si/SiO2)(n) multilayers and microcavities for LED applications
Authors: Pucker, G Bellutti, P Cazzanelli, M Gaburro, Z Pavesi, L
Citation: G. Pucker et al., (Si/SiO2)(n) multilayers and microcavities for LED applications, OPT MATER, 17(1-2), 2001, pp. 27-30
High electric field induced positive charges in thin gate oxide
Authors: Bellutti, P Zorzi, N
Citation: P. Bellutti et N. Zorzi, High electric field induced positive charges in thin gate oxide, SOL ST ELEC, 45(8), 2001, pp. 1333-1338
Porous silicon optical devices and Si/SiO2 quantum wells: recent results
Authors: Mulloni, V Chierchia, R Mazzoleni, C Pucker, G Pavesi, L Bellutti, P
Citation: V. Mulloni et al., Porous silicon optical devices and Si/SiO2 quantum wells: recent results, PHIL MAG B, 80(4), 2000, pp. 705-718
Light emitting diodes based on anodically oxidized silicon/porous silicon heterojunction
Authors: Gaburro, Z Bellutti, P Chierchia, R Mulloni, V Pavesi, L
Citation: Z. Gaburro et al., Light emitting diodes based on anodically oxidized silicon/porous silicon heterojunction, MAT SCI E B, 69, 2000, pp. 109-113
Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers
Authors: Gaburro, Z Pucker, G Bellutti, P Pavesi, L
Citation: Z. Gaburro et al., Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers, SOL ST COMM, 114(1), 2000, pp. 33-37
CMOS fabrication of a light emitting diode based on silicon/porous siliconheterojunction
Authors: Gaburro, Z Bellutti, P Pavesi, L
Citation: Z. Gaburro et al., CMOS fabrication of a light emitting diode based on silicon/porous siliconheterojunction, PHYS ST S-A, 182(1), 2000, pp. 407-412
The effect of stress polarity on positive charging in thin gate oxide
Authors: Bellutti, P Eccel, L Zorzi, N
Citation: P. Bellutti et al., The effect of stress polarity on positive charging in thin gate oxide, MICROEL REL, 40(4-5), 2000, pp. 747-750
Room temperature luminescence from (Si/SiO2)(n) (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor
Authors: Pucker, G Bellutti, P Spinella, C Gatterer, K Cazzanelli, M Pavesi, L
Citation: G. Pucker et al., Room temperature luminescence from (Si/SiO2)(n) (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor, J APPL PHYS, 88(10), 2000, pp. 6044-6051
On the better quality of wet-grown gate oxides
Authors: Bellutti, P Zorzi, N
Citation: P. Bellutti et N. Zorzi, On the better quality of wet-grown gate oxides, EL SOLID ST, 2(10), 1999, pp. 525-526
Gate oxide reliability improvement related to dry local oxidation of silicon
Authors: Bellutti, P Zorzi, N Verzellesi, G
Citation: P. Bellutti et al., Gate oxide reliability improvement related to dry local oxidation of silicon, MICROEL REL, 39(2), 1999, pp. 181-185
An all-implanted p-channel Si JFET fully compatible with CMOS technology
Authors: Dalla Betta, GF Bellutti, P Boscardin, M Ferrario, L Soncini, G Zorzi, N
Citation: Gf. Dalla Betta et al., An all-implanted p-channel Si JFET fully compatible with CMOS technology, MICROELEC J, 30(3), 1999, pp. 281-285
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction
Authors: Pavesi, L Chierchia, R Bellutti, P Lui, A Fuso, F Labardi, M Pardi, L Sbrana, F Allegrini, M Trusso, S Vasi, C Ventura, PJ Costa, LC Carmo, MC Bisi, O
Citation: L. Pavesi et al., Light emitting porous silicon diode based on a silicon/porous silicon heterojunction, J APPL PHYS, 86(11), 1999, pp. 6474-6482
Risultati: 1-13 |