Authors:
Ortsiefer, M
Shau, R
Bohm, G
Zigldrum, M
Rosskopf, J
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., 90 degrees C continuous-wave operation of 1.83-mu m Vertical-Cavity Surface-Emitting Lasers, IEEE PHOTON, 12(11), 2000, pp. 1435-1437
Authors:
Effenberger, H
Bohm, G
Huber, M
Lintner, F
Hofer, H
Citation: H. Effenberger et al., Experimental study of bone-implant contact with a parabolic acetabular component (Hofer-Imhof), ARCH ORTHOP, 120(3-4), 2000, pp. 160-165
Citation: G. Bohm et K. Szlachanyi, Weak Hopf algebras II. Representation theory, dimensions, and the Markov trace, J ALGEBRA, 233(1), 2000, pp. 156-212
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Room-temperature operation of index-guided 1.55 mu m InP-based vertical-cavity surface-emitting laser, ELECTR LETT, 36(5), 2000, pp. 437-439
Authors:
Kuang, GK
Bohm, G
Graf, N
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy, ELECTR LETT, 36(22), 2000, pp. 1849-1851
Authors:
Shau, R
Ortsiefer, M
Zigldrum, M
Rosskopf, J
Bohm, G
Kohler, F
Amann, MC
Citation: R. Shau et al., Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 mu m wavelength range, ELECTR LETT, 36(15), 2000, pp. 1286-1287
Authors:
Ortsiefer, M
Shau, R
Zigldrum, M
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation, ELECTR LETT, 36(13), 2000, pp. 1124-1126
Citation: M. Arzberger et al., Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction, ELECTR LETT, 36(1), 2000, pp. 87-88
Authors:
Kuang, GK
Bohm, G
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., 2.12 mu m InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1091-1092
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Low-threshold index-guided 1.5 mu m long-wavelength vertical-cavity surface-emitting laser with high efficiency, APPL PHYS L, 76(16), 2000, pp. 2179-2181
Authors:
Finley, JJ
Skalitz, M
Arzberger, M
Zrenner, A
Bohm, G
Abstreiter, G
Citation: Jj. Finley et al., Optically induced persistent charge storage effects in self assembled InAsquantum dots, JPN J A P 1, 38(1B), 1999, pp. 531-534