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Results:
1-17
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Results: 17
Authors:
Bonafos, C
Colombeau, B
Altibelli, A
Carrada, M
Assayag, GB
Garrido, B
Lopez, M
Perez-Rodriguez, A
Morante, JR
Claverie, A
Citation: C. Bonafos et al., Kinetic study of group IV nanoparticles ion beam synthesized in SiO2, NUCL INST B, 178, 2001, pp. 17-24
Authors:
Lopez, M
Garrido, B
Bonafos, C
Perez-Rodriguez, A
Morante, JR
Claverie, A
Citation: M. Lopez et al., Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO2, NUCL INST B, 178, 2001, pp. 89-92
Authors:
Lopez, M
Garrido, B
Bonafos, C
Perez-Rodriguez, A
Morante, JR
Citation: M. Lopez et al., Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission, SOL ST ELEC, 45(8), 2001, pp. 1495-1504
Authors:
Colombeau, B
Cristiano, F
Altibelli, A
Bonafos, C
Ben Assayag, G
Claverie, A
Citation: B. Colombeau et al., Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon, APPL PHYS L, 78(7), 2001, pp. 940-942
Authors:
Claverie, A
Colombeau, B
Ben Assayag, G
Bonafos, C
Cristiano, F
Omri, M
de Mauduit, B
Citation: A. Claverie et al., Thermal evolution of extended defects in implanted Si: impact on dopant diffusion, MAT SC S PR, 3(4), 2000, pp. 269-277
Authors:
Bonafos, C
Garrido, B
Lopez, M
Perez-Rodriguez, A
Morante, JR
Kihn, Y
Ben Assayag, G
Claverie, A
Citation: C. Bonafos et al., Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2, MAT SCI E B, 69, 2000, pp. 380-385
Authors:
Perez-Rodriguez, A
Garrido, B
Bonafos, C
Lopez, M
Gonzalez-Varona, O
Morante, JR
Montserrat, J
Rodriguez, R
Garcia-Lorente, JA
Citation: A. Perez-rodriguez et al., Ion Beam synthesis of semiconductor nanocrystals for Si technology devices, B S ESP CER, 39(4), 2000, pp. 458-462
Authors:
Gonzalez-Varona, O
Perez-Rodriguez, A
Garrido, B
Bonafos, C
Lopez, M
Morante, JR
Montserrat, J
Rodriguez, R
Citation: O. Gonzalez-varona et al., Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices, NUCL INST B, 161, 2000, pp. 904-908
Authors:
Cuadras, A
Garrido, B
Bonafos, C
Morante, JR
Fonseca, L
Franz, M
Pressel, K
Citation: A. Cuadras et al., Optical characterization of thermally oxidized Si1-x-yGexCy layers, THIN SOL FI, 364(1-2), 2000, pp. 233-238
Authors:
Cuadras, A
Garrido, B
Bonafos, C
Morante, JR
Fonseca, L
Pressel, K
Citation: A. Cuadras et al., Oxidation of Si1-x-yGexCy strained layers grown on Si: kinetics and inter-face properties, MICROEL REL, 40(4-5), 2000, pp. 829-832
Authors:
Lopez, M
Garrido, B
Bonafos, C
Gonzalez-Varona, O
Perez-Rodriguez, A
Montserrat, J
Morante, JR
Citation: M. Lopez et al., Effect of implantation and annealing conditions on the photoluminescence emission of Si nanocrystals ion beam synthesised in SiO2, MICROEL REL, 40(4-5), 2000, pp. 859-862
Authors:
Gonzalez-Varona, O
Bonafos, C
Lopez, M
Garrido, B
Perez-Rodriguez, A
Morante, JR
Montserrat, J
Rodriguez, R
Citation: O. Gonzalez-varona et al., Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation, MICROEL REL, 40(4-5), 2000, pp. 885-888
Authors:
Garrido, B
Lopez, M
Gonzalez, O
Perez-Rodriguez, A
Morante, JR
Bonafos, C
Citation: B. Garrido et al., Correlation between structural and optical properties of Si nanocrystals embedded in SiO2: The mechanism of visible light emission, APPL PHYS L, 77(20), 2000, pp. 3143-3145
Authors:
Bonafos, C
Garrido, B
Lopez, M
Perez-Rodriguez, A
Morante, JR
Kihn, Y
Ben Assayag, G
Claverie, A
Citation: C. Bonafos et al., An electron microscopy study of the growth of Ge nanoparticles in SiO2, APPL PHYS L, 76(26), 2000, pp. 3962-3964
Authors:
Perez-Rodriguez, A
Garrido, B
Bonafos, C
Lopez, M
Gonzalez-Varona, O
Monrante, JR
Montserrat, J
Rodriguez, R
Citation: A. Perez-rodriguez et al., Ion beam synthesis of compound nanoparticles in SiO2, J MAT S-M E, 10(5-6), 1999, pp. 385-391
Authors:
Bonafos, C
Garrido, B
Lopez, M
Romano-Rodriguez, A
Gonzalez-Varona, O
Perez-Rodriguez, A
Morante, JR
Rodriguez, R
Citation: C. Bonafos et al., Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2, NUCL INST B, 147(1-4), 1999, pp. 373-377
Authors:
Garrido, B
Cuadras, A
Bonafos, C
Morante, JR
Fonseca, L
Franz, M
Pressel, K
Citation: B. Garrido et al., Thermal dry oxidation of Si1-x-yGexCy strained layers grown on silicon, MICROEL ENG, 48(1-4), 1999, pp. 207-210
Risultati:
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