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Results:
1-17
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Results: 17
Authors:
Defives, D
Durand, O
Wyczisk, F
Noblanc, O
Brylinski, C
Meyer, F
Citation: D. Defives et al., Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC, MICROEL ENG, 55(1-4), 2001, pp. 369-374
Authors:
Amy, F
Enriquez, H
Soukiassian, P
Storino, PF
Chabal, YJ
Mayne, AJ
Dujardin, G
Hwu, YK
Brylinski, C
Citation: F. Amy et al., Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3), PHYS REV L, 86(19), 2001, pp. 4342-4345
Authors:
Chaussende, D
Ferro, G
Monteil, Y
Brylinski, C
Bouix, J
Citation: D. Chaussende et al., Thermochemistry of silicon carbide growth by chemical transport reactions, J MATER SCI, 36(2), 2001, pp. 335-342
Authors:
Amy, F
Enriquez, H
Soukiassian, P
Brylinski, C
Mayne, A
Dujardin, G
Citation: F. Amy et al., Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer, APPL PHYS L, 79(6), 2001, pp. 767-769
Authors:
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
Citation: F. Amy et al., Identification of the 6H-SiC(0001) 3 x 3 surface reconstruction core-levelshifted components, SURF SCI, 464(1), 2000, pp. L691-L696
Authors:
di Forte-Poisson, MA
Bernard, S
Teisseire, L
Brylinski, C
Cassette, S
di Persio, J
Citation: Ma. Di Forte-poisson et al., Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistorbase layer, J CRYST GR, 221, 2000, pp. 717-721
Authors:
Brisset, C
Noblanc, O
Picard, C
Joffre, F
Brylinski, C
Citation: C. Brisset et al., 4H-SiC MESFETs behavior after high dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 598-603
Authors:
Royet, AS
Ouisse, T
Cabon, B
Noblanc, O
Arnodo, C
Brylinski, C
Citation: As. Royet et al., Self-heating effects in silicon carbide MESFETs, IEEE DEVICE, 47(11), 2000, pp. 2221-2227
Authors:
Chaussende, D
Monteil, Y
Aboughe-nze, P
Brylinski, C
Bouix, J
Citation: D. Chaussende et al., Thermodynamical calculations on the chemical vapour transport of silicon carbide, MAT SCI E B, 61-2, 1999, pp. 98-101
Authors:
Noblanc, O
Arnodo, C
Dua, C
Chartier, E
Brylinski, C
Citation: O. Noblanc et al., Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs, MAT SCI E B, 61-2, 1999, pp. 339-344
Authors:
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Meyer, F
Citation: D. Defives et al., Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts, MAT SCI E B, 61-2, 1999, pp. 395-401
Authors:
Kakanakova-Georgieva, A
Kassamakova, L
Marinova, T
Kakanakov, R
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., Interface chemistry of WN/4H-SiC structures, APPL SURF S, 151(3-4), 1999, pp. 225-232
Authors:
Kakanakova-Georgieva, A
Marinova, T
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., Characterization of ohmic and Schottky contacts on SiC, THIN SOL FI, 344, 1999, pp. 637-641
Authors:
Kakanakova-Georgieva, A
Marinova, T
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., XPS characterization of tungsten-based contact layers on 4H-SiC, THIN SOL FI, 337(1-2), 1999, pp. 180-183
Authors:
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Aubry-Fortuna, V
Meyer, F
Citation: D. Defives et al., Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers, IEEE DEVICE, 46(3), 1999, pp. 449-455
Authors:
Siriex, D
Noblanc, O
Barataud, D
Chartier, E
Brylinski, C
Quere, R
Citation: D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584
Authors:
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
Citation: F. Amy et al., SiO2/6H-SiC(0001)3x3 initial interface formation by Si overlayer oxidation, APPL PHYS L, 75(21), 1999, pp. 3360-3362
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