Authors:
Defives, D
Durand, O
Wyczisk, F
Noblanc, O
Brylinski, C
Meyer, F
Citation: D. Defives et al., Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC, MICROEL ENG, 55(1-4), 2001, pp. 369-374
Authors:
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
Citation: F. Amy et al., Identification of the 6H-SiC(0001) 3 x 3 surface reconstruction core-levelshifted components, SURF SCI, 464(1), 2000, pp. L691-L696
Authors:
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Aubry-Fortuna, V
Meyer, F
Citation: D. Defives et al., Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers, IEEE DEVICE, 46(3), 1999, pp. 449-455
Authors:
Siriex, D
Noblanc, O
Barataud, D
Chartier, E
Brylinski, C
Quere, R
Citation: D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584