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Results: 1-17 |
Results: 17
High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
Authors: Sebastian, J Beister, G Bugge, F Buhrandt, F Erbert, G Hansel, HG Hulsewede, R Knauer, A Pittroff, W Staske, R Schroder, M Wenzel, H Weyers, M Trankle, G
Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339
Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence
Authors: Zeimer, U Grenzer, J Pietsch, U Gramlich, S Bugge, F Smirnitzki, V Weyers, M Trankle, G
Citation: U. Zeimer et al., Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence, J PHYS D, 34(10A), 2001, pp. A183-A187
High-power diode lasers with small vertical beam divergence emitting at 808 nm
Authors: Wenzel, H Bugge, F Erbert, G Hulsewede, R Staske, R Trankle, G
Citation: H. Wenzel et al., High-power diode lasers with small vertical beam divergence emitting at 808 nm, ELECTR LETT, 37(16), 2001, pp. 1024-1026
12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
Authors: Bugge, F Erbert, G Fricke, J Gramlich, S Staske, R Wenzel, H Zeimer, U Weyers, M
Citation: F. Bugge et al., 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells, APPL PHYS L, 79(13), 2001, pp. 1965-1967
Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
Authors: Zeimer, U Bugge, F Gramlich, S Smirnitski, V Weyers, M Trankle, G Grenzer, J Pietsch, U Cassabois, G Emiliani, V Lienau, C
Citation: U. Zeimer et al., Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy, APPL PHYS L, 79(11), 2001, pp. 1611-1613
Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation
Authors: Knauer, A Bugge, F Erbert, G Wenzel, H Vogel, K Zeimer, U Weyers, M
Citation: A. Knauer et al., Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation, J ELEC MAT, 29(1), 2000, pp. 53-56
MOVPE growth of AlGaAs/GaInP diode lasers
Authors: Bugge, F Knauer, A Gramlich, S Rechenberg, I Beister, G Sebastian, J Wenzel, H Erbert, G Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
Epitaxy of high-power diode laser structures
Authors: Weyers, M Bhattacharya, A Bugge, F Knauer, A
Citation: M. Weyers et al., Epitaxy of high-power diode laser structures, T APPL PHYS, 78, 2000, pp. 83-120
Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm
Authors: Bugge, F Zeimer, U Gramlich, S Rechenberg, I Sebastian, J Erbert, G Weyers, M
Citation: F. Bugge et al., Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm, J CRYST GR, 221, 2000, pp. 496-502
Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes
Authors: Rechenberg, I Klehr, A Richter, U Erfurth, W Bugge, F Klein, A
Citation: I. Rechenberg et al., Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes, J CRYST GR, 210(1-3), 2000, pp. 307-312
180mW DBR lasers with first-order grating in GaAs emitting at 1062nm
Authors: Hofmann, L Klehr, A Bugge, F Wenzel, H Smirnitski, V Sebastian, J Erbert, G
Citation: L. Hofmann et al., 180mW DBR lasers with first-order grating in GaAs emitting at 1062nm, ELECTR LETT, 36(6), 2000, pp. 534-535
Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAslaser structures for lambda approximate to 800 nm
Authors: Oster, A Bugge, F Erbert, G Wenzel, H
Citation: A. Oster et al., Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAslaser structures for lambda approximate to 800 nm, IEEE S T QU, 5(3), 1999, pp. 631-636
High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Authors: Erbert, G Bugge, F Knauer, A Sebastian, J Thies, A Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm, IEEE S T QU, 5(3), 1999, pp. 780-784
Determination of the valence-band offset and its temperature dependence inisotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements
Authors: Zubkov, VI Mel'nik, MA Solomonov, AV Pikhtin, AN Bugge, F
Citation: Vi. Zubkov et al., Determination of the valence-band offset and its temperature dependence inisotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements, SEMICONDUCT, 33(8), 1999, pp. 858-861
7W CW power from tensile-strained GaAsyP1-y/AlGaAs (lambda = 735 nm) QW diode lasers
Authors: Knauer, A Erbert, G Wenzel, H Bhattacharya, A Bugge, F Maege, J Pittroff, W Sebastian, J
Citation: A. Knauer et al., 7W CW power from tensile-strained GaAsyP1-y/AlGaAs (lambda = 735 nm) QW diode lasers, ELECTR LETT, 35(8), 1999, pp. 638-639
MOVPE growth of tunable DBR laser diode emitting at 1060 nm
Authors: Bugge, F Knauer, A Zeimer, U Sebastian, J Smirnitski, VB Klehr, A Erbert, G Weyers, M
Citation: F. Bugge et al., MOVPE growth of tunable DBR laser diode emitting at 1060 nm, J CRYST GR, 195(1-4), 1998, pp. 676-680
Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy
Authors: Knauer, A Oelgart, G Oster, A Gramlich, S Bugge, F Weyers, M
Citation: A. Knauer et al., Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 694-699
Risultati: 1-17 |