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KNAP W
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CAMASSEL J
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Citation: P. Wisniewski et al., INVESTIGATION OF OPTICALLY-ACTIVE E-1 TRANSVERSAL OPTIC PHONON MODES IN ALXGA1-XN LAYERS DEPOSITED ON 6H-SIC SUBSTRATES USING INFRARED REFLECTANCE, Applied physics letters, 73(13), 1998, pp. 1760-1762
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Citation: Mb. Elmekki et al., INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1772-1776
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Citation: Jm. Bluet et al., OPTICAL INVESTIGATION OF THICK 3C-SIC LAYERS DEPOSITED ON BULK SILICON BY CVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1385-1387
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Citation: R. Bonnot et al., COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1463-1466
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Citation: Jm. Bluet et al., COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 152-155
Citation: Al. Syrkin et al., REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 374-378
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Citation: W. Knap et al., CYCLOTRON-RESONANCE AND QUANTUM HALL-EFFECT STUDIES OF THE 2-DIMENSIONAL ELECTRON-GAS CONFINED AT THE GAN ALGAN INTERFACE/, Applied physics letters, 70(16), 1997, pp. 2123-2125
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Citation: J. Rodriguezviejo et al., GROWTH AND CHARACTERIZATION OF SIC FILMS DEPOSITED ON A-SIO2 SI(100) SUBSTRATES/, Materials science and technology, 12(1), 1996, pp. 98-101
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Citation: P. Perlin et al., DETERMINATION OF THE EFFECTIVE-MASS OF GAN FROM INFRARED REFLECTIVITYAND HALL-EFFECT, Applied physics letters, 68(8), 1996, pp. 1114-1116
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