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Results: 1-25 | 26-35
Results: 1-25/35
CHARGE INJECTION USING GATE-INDUCED-DRAIN-LEAKAGE CURRENT FOR CHARACTERIZATION OF PLASMA EDGE DAMAGE IN CMOS DEVICES
Authors: BROZEK T RAO VR SRIDHARAN A WERKING JD CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., CHARGE INJECTION USING GATE-INDUCED-DRAIN-LEAKAGE CURRENT FOR CHARACTERIZATION OF PLASMA EDGE DAMAGE IN CMOS DEVICES, IEEE transactions on semiconductor manufacturing, 11(2), 1998, pp. 211-216
HALF-LIFE OF TI-44
Authors: NORMAN EB BROWNE E CHAN YD GOLDMAN ID LARIMER RM LESKO KT NELSON M WIETFELDT FE ZLIMEN I
Citation: Eb. Norman et al., HALF-LIFE OF TI-44, Physical review. C. Nuclear physics, 57(4), 1998, pp. 2010-2016
COSMIC-RAY HALF-LIFE OF PM-144
Authors: ZAERPOOR K CHAN YD DIGREGORIO DE DRAGOWSKY MR HINDI MM ISAAC MCP KRANE KS LARIMER RM MACCHIAVELLI AO MACLEOD RW MIOCINOVIC P NORMAN EB ROBINSON SJ
Citation: K. Zaerpoor et al., COSMIC-RAY HALF-LIFE OF PM-144, Physical review. C. Nuclear physics, 57(4), 1998, pp. 2046-2048
SEARCH FOR STRANGE MATTER BY HEAVY-ION ACTIVATION
Authors: ISAAC MCP CHAN YD CLARK R DELEPLANQUE MA DRAGOWSKY MR FALLON P GOLDMAN ID LARIMER RM LEE IY MACCHIAVELLI AO MACLEOD RW NISHIIZUMI K NORMAN EB SCHROEDER LS STEPHENS FS
Citation: Mcp. Isaac et al., SEARCH FOR STRANGE MATTER BY HEAVY-ION ACTIVATION, Physical review letters, 81(12), 1998, pp. 2416-2419
GATE OXIDE LEAKAGE DUE TO TEMPERATURE ACCELERATED DEGRADATION UNDER PLASMA CHARGING CONDITIONS
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., GATE OXIDE LEAKAGE DUE TO TEMPERATURE ACCELERATED DEGRADATION UNDER PLASMA CHARGING CONDITIONS, Microelectronics and reliability, 38(1), 1998, pp. 73-79
CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING
Authors: OKANDAN M FONASH SJ OZAITA M PREUNINGER F CHAN YD WERKING J
Citation: M. Okandan et al., CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING, IEEE electron device letters, 18(10), 1997, pp. 495-498
FOWLER-NORDHEIM STRESSING OF POLYCRYSTALLINE SI OXIDE SI STRUCTURES -OBSERVATION OF STRESS-INDUCED DEFECTS IN THE OXIDE, OXIDE SI INTERFACE, AND IN BULK SILICON/
Authors: JIANG J AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: J. Jiang et al., FOWLER-NORDHEIM STRESSING OF POLYCRYSTALLINE SI OXIDE SI STRUCTURES -OBSERVATION OF STRESS-INDUCED DEFECTS IN THE OXIDE, OXIDE SI INTERFACE, AND IN BULK SILICON/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 875-879
RADIOISOTOPE YIELDS FROM 1.85-GEV PROTONS ON MO AND 1.85 AND 5.0-GEV PROTONS ON TE
Authors: BARDAYAN DW DACRUZ MTF HINDI MM BARGHOUTY AF CHAN YD GARCIA A LARIMER RM LESKO KT NORMAN EB ROSSI DF WIETFELDT FE ZLIMEN I
Citation: Dw. Bardayan et al., RADIOISOTOPE YIELDS FROM 1.85-GEV PROTONS ON MO AND 1.85 AND 5.0-GEV PROTONS ON TE, Physical review. C. Nuclear physics, 55(2), 1997, pp. 820-827
ON THE HALF-LIFE OF TI-44
Authors: NORMAN EB BROWNE E CHAN YD GOLDMAN ID LARIMER RM LESKO KT NELSON M WIETFELDT FE ZLIMEN I
Citation: Eb. Norman et al., ON THE HALF-LIFE OF TI-44, Nuclear physics. A, 621(1-2), 1997, pp. 92-95
A STUDY OF CARRIER-TRAP GENERATION BY FOWLER-NORDHEIM TUNNELING STRESS ON POLYCRYSTALLINE-SILICON SIO2/SILICON STRUCTURES/
Authors: JIANG J AWADELKARIM OO CHAN YD
Citation: J. Jiang et al., A STUDY OF CARRIER-TRAP GENERATION BY FOWLER-NORDHEIM TUNNELING STRESS ON POLYCRYSTALLINE-SILICON SIO2/SILICON STRUCTURES/, Solid-state electronics, 41(1), 1997, pp. 41-46
GALACTIC CONFINEMENT TIME OF IRON-GROUP COSMIC-RAYS DERIVED FROM THE MN-54 CHRONOMETER
Authors: ZAERPOOR K CHAN YD DIGREGORIO DE DRAGOWSKY MR HINDI MM ISAAC MCP KRANE KS LARIMER RM MACCHIAVELLI AO MACLEOD RW MIOCINOVIC P NORMAN EB
Citation: K. Zaerpoor et al., GALACTIC CONFINEMENT TIME OF IRON-GROUP COSMIC-RAYS DERIVED FROM THE MN-54 CHRONOMETER, Physical review letters, 79(22), 1997, pp. 4306-4309
COMPARISON BETWEEN DIRECT-CURRENT AND SINUSOIDAL CURRENT STRESSING OFGATE OXIDES AND OXIDE SILICON INTERFACES IN METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS/
Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: L. Trabzon et al., COMPARISON BETWEEN DIRECT-CURRENT AND SINUSOIDAL CURRENT STRESSING OFGATE OXIDES AND OXIDE SILICON INTERFACES IN METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(3), 1997, pp. 1575-1580
HOLE TRAP GENERATION IN THE GATE OXIDE DUE TO PLASMA-INDUCED CHARGING
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., HOLE TRAP GENERATION IN THE GATE OXIDE DUE TO PLASMA-INDUCED CHARGING, IEEE electron device letters, 17(9), 1996, pp. 440-442
SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE
Authors: OKANDAN M FONASH SJ AWADELKARIM OO CHAN YD PREUNINGER F
Citation: M. Okandan et al., SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE, IEEE electron device letters, 17(8), 1996, pp. 388-390
TEMPERATURE ACCELERATED GATE OXIDE DEGRADATION UNDER PLASMA-INDUCED CHARGING
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., TEMPERATURE ACCELERATED GATE OXIDE DEGRADATION UNDER PLASMA-INDUCED CHARGING, IEEE electron device letters, 17(6), 1996, pp. 288-290
SINUSOIDAL AC STRESSING OF THIN-GATE OXIDES AND OXIDE SILICON INTERFACES IN 0.5-MU-M N-MOSFETS/
Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: L. Trabzon et al., SINUSOIDAL AC STRESSING OF THIN-GATE OXIDES AND OXIDE SILICON INTERFACES IN 0.5-MU-M N-MOSFETS/, IEEE electron device letters, 17(12), 1996, pp. 569-571
CROSS-SECTIONS FOR SC-45(P,2N)TI-44 AND RELATED REACTIONS
Authors: EJNISMAN R GOLDMAN ID PASCHOLATI PR DACRUZ MTF OLIVEIRA RM NORMAN EB ZLIMEN I WIETFELDT FE LARIMER RM CHAN YD LESKO KT GARCIA A
Citation: R. Ejnisman et al., CROSS-SECTIONS FOR SC-45(P,2N)TI-44 AND RELATED REACTIONS, Physical review. C. Nuclear physics, 54(4), 1996, pp. 2047-2050
PRELIMINARY-RESULTS FROM A STUDY OF THE DOUBLE-BETA DECAY OF ND-150
Authors: ISAAC MCP CHAN YD HURLEY D LESKO KT MCDONALD RJ MOORHEAD ME NORMAN EB SMITH AR STOKSTAD RG
Citation: Mcp. Isaac et al., PRELIMINARY-RESULTS FROM A STUDY OF THE DOUBLE-BETA DECAY OF ND-150, Nuclear physics. B, 1996, pp. 244-246
A COMPARISON BETWEEN PLASMA CHARGING-DAMAGE AND INDUCTIVE-DAMAGE - DAMAGE RESPONSE TO FOWLER-NORDHEIM STRESS
Authors: SALAH A AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: A. Salah et al., A COMPARISON BETWEEN PLASMA CHARGING-DAMAGE AND INDUCTIVE-DAMAGE - DAMAGE RESPONSE TO FOWLER-NORDHEIM STRESS, Solid-state electronics, 39(12), 1996, pp. 1701-1707
THRESHOLD VOLTAGE DEGRADATION IN PLASMA-DAMAGED CMOS TRANSISTORS - ROLE OF ELECTRON AND HOLE TRAPS RELATED TO CHARGING DAMAGE
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., THRESHOLD VOLTAGE DEGRADATION IN PLASMA-DAMAGED CMOS TRANSISTORS - ROLE OF ELECTRON AND HOLE TRAPS RELATED TO CHARGING DAMAGE, Microelectronics and reliability, 36(11-12), 1996, pp. 1627-1630
PLASMA-CHARGING DAMAGE TO GATE SIO2 AND SIO2 SI INTERFACES IN SUBMICRON N-CHANNEL TRANSISTORS - LATENT DEFECTS AND PASSIVATION/DEPASSIVATION OF DEFECTS BY HYDROGEN/
Authors: AWADELKARIM OO FONASH SJ MIKULAN PI CHAN YD
Citation: Oo. Awadelkarim et al., PLASMA-CHARGING DAMAGE TO GATE SIO2 AND SIO2 SI INTERFACES IN SUBMICRON N-CHANNEL TRANSISTORS - LATENT DEFECTS AND PASSIVATION/DEPASSIVATION OF DEFECTS BY HYDROGEN/, Journal of applied physics, 79(1), 1996, pp. 517-525
OBSERVATION OF A NEW-TYPE OF PLASMA-ETCHING DAMAGE - DAMAGE TO N-CHANNEL TRANSISTORS ARISING FROM INDUCTIVE METAL LOOPS
Authors: SALAH A AWADELKARIM OO PREUNINGER F CHAN YD
Citation: A. Salah et al., OBSERVATION OF A NEW-TYPE OF PLASMA-ETCHING DAMAGE - DAMAGE TO N-CHANNEL TRANSISTORS ARISING FROM INDUCTIVE METAL LOOPS, Applied physics letters, 68(12), 1996, pp. 1690-1692
A MODEL FOR THRESHOLD VOLTAGE SHIFT UNDER POSITIVE AND NEGATIVE-HIGH-FIELD ELECTRON INJECTION IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TRANSISTORS
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., A MODEL FOR THRESHOLD VOLTAGE SHIFT UNDER POSITIVE AND NEGATIVE-HIGH-FIELD ELECTRON INJECTION IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TRANSISTORS, JPN J A P 1, 34(2B), 1995, pp. 969-972
FURTHER-STUDIES ON THE EVIDENCE FOR A 17-KEV NEUTRINO IN A C-14 DOPEDGERMANIUM DETECTOR
Authors: WIETFELDT FE NORMAN EB CHAN YD DACRUZ MTF GARCIA A HALLER EE HANSEN WL HINDI MM LARIMER RM LESKO KT LUKE PN STOKSTAD RG SUR B ZLIMEN I
Citation: Fe. Wietfeldt et al., FURTHER-STUDIES ON THE EVIDENCE FOR A 17-KEV NEUTRINO IN A C-14 DOPEDGERMANIUM DETECTOR, Physical review. C. Nuclear physics, 52(2), 1995, pp. 1028-1040
HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING
Authors: AWADELKARIM OO FONASH SJ MIKULAN PI OZAITA M CHAN YD
Citation: Oo. Awadelkarim et al., HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING, Microelectronic engineering, 28(1-4), 1995, pp. 47-50
Risultati: 1-25 | 26-35