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Results: 1-25 | 26-50 | 51-64
Results: 1-25/64
BLUESHIFTING OF INGAASP-INP LASER-DIODES USING A LOW-ENERGY ION-IMPLANTATION TECHNIQUE - COMPARISON BETWEEN STRAINED AND LATTICE-MATCHED QUANTUM-WELL STRUCTURES
Authors: PAQUETTE M AIMEZ V BEAUVAIS J BEERENS J POOLE PJ CHARBONNEAU S ROTH AP
Citation: M. Paquette et al., BLUESHIFTING OF INGAASP-INP LASER-DIODES USING A LOW-ENERGY ION-IMPLANTATION TECHNIQUE - COMPARISON BETWEEN STRAINED AND LATTICE-MATCHED QUANTUM-WELL STRUCTURES, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 741-745
PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION
Authors: CHARBONNEAU S KOTELES ES POOLE PJ HE JJ AERS GC HAYSOM J BUCHANAN M FENG Y DELAGE A YANG F DAVIES M GOLDBERG RD PIVA PG MITCHELL IV
Citation: S. Charbonneau et al., PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 772-793
REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES
Authors: PIVA PG GOLDBERG RD MITCHELL IV FAFARD S DION M BUCHANAN M CHARBONNEAU S HILLIER G MINER C
Citation: Pg. Piva et al., REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1790-1793
TEMPERATURE INDEPENDENT LIFETIME IN INALAS QUANTUM DOTS
Authors: ARLETT J YANG F HINZER K FAFARD S FENG Y CHARBONNEAU S LEON R
Citation: J. Arlett et al., TEMPERATURE INDEPENDENT LIFETIME IN INALAS QUANTUM DOTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 578-581
TEMPERATURE EFFECTS IN SEMICONDUCTOR QUANTUM-DOT LASERS
Authors: FAFARD S HINZER K SPRINGTHORPE AJ FENG Y MCCAFFREY J CHARBONNEAU S GRISWOLD EM
Citation: S. Fafard et al., TEMPERATURE EFFECTS IN SEMICONDUCTOR QUANTUM-DOT LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 114-117
GROWTH AND CHARACTERIZATION OF GAN THIN-FILMS BY MAGNETRON SPUTTER EPITAXY
Authors: SINGH P CORBETT JM WEBB JB CHARBONNEAU S YANG F ROBERTSON MD
Citation: P. Singh et al., GROWTH AND CHARACTERIZATION OF GAN THIN-FILMS BY MAGNETRON SPUTTER EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 786-789
LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING
Authors: HAYSOM JE POOLE PJ FENG Y KOTELES ES HE JJ CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Je. Haysom et al., LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 817-820
TIME AND FREQUENCY-RESOLVED PHOTOLUMINESCENCE UP CONVERSION USING BROADLY TUNABLE PICOSECOND INFRARED PULSES
Authors: POOLE PJ HONG J STOLOW A CHARBONNEAU S
Citation: Pj. Poole et al., TIME AND FREQUENCY-RESOLVED PHOTOLUMINESCENCE UP CONVERSION USING BROADLY TUNABLE PICOSECOND INFRARED PULSES, Review of scientific instruments, 69(5), 1998, pp. 1943-1948
PASSIVATION OF INGAAS SURFACES AND INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS BY SULFUR TREATMENT/
Authors: DRIAD R LU ZH CHARBONNEAU S MCKINNON WR LAFRAMBOISE S POOLE PJ MCALISTER SP
Citation: R. Driad et al., PASSIVATION OF INGAAS SURFACES AND INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS BY SULFUR TREATMENT/, Applied physics letters, 73(5), 1998, pp. 665-667
ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES
Authors: PIVA PG CHARBONNEAU S GOLDBERG RD MITCHELL IV HILLIER G MINER C
Citation: Pg. Piva et al., ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES, Applied physics letters, 73(1), 1998, pp. 67-69
A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/
Authors: PIVA PG GOLDBERG RD MITCHELL IV CHEN HJ FEENSTRA RM WEATHERLY GC MCCOMB DW AERS GC POOLE PJ CHARBONNEAU S
Citation: Pg. Piva et al., A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(13), 1998, pp. 1599-1601
THE EPR - THE VENDORS VIEW
Authors: BURKLE W CHARBONNEAU S
Citation: W. Burkle et S. Charbonneau, THE EPR - THE VENDORS VIEW, ATW-INTERNATIONALE ZEITSCHRIFT FUR KERNENERGIE, 42(12), 1997, pp. 761-764
STATE-FILLING AND MAGNETOPHOTOLUMINESCENCE OF EXCITED-STATES IN INGAAS GAAS SELF-ASSEMBLED QUANTUM DOTS/
Authors: RAYMOND S FAFARD S POOLE PJ WOJS A HAWRYLAK P GOULD C SACHRAJDA A CHARBONNEAU S LEONARD D LEON R PETROFF PM MERZ JL
Citation: S. Raymond et al., STATE-FILLING AND MAGNETOPHOTOLUMINESCENCE OF EXCITED-STATES IN INGAAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Superlattices and microstructures, 21(4), 1997, pp. 541-558
ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS
Authors: GOLDBERG RD MITCHELL IV POOLE P LABRIE D LAFONTAINE H AERS GC WILLIAMS R DION M CHARBONNEAU S RAMANUJANCHA K WEATHERLY GC
Citation: Rd. Goldberg et al., ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 418-422
EXCITON DROPLETS IN ZERO-DIMENSIONAL SYSTEMS IN A MAGNETIC-FIELD
Authors: RAYMOND S HAWRYLAK P GOULD C FAFARD S SACHRAJDA A POTEMSKI M WOJS A CHARBONNEAU S LEONARD D PETROFF PM MERZ JL
Citation: S. Raymond et al., EXCITON DROPLETS IN ZERO-DIMENSIONAL SYSTEMS IN A MAGNETIC-FIELD, Solid state communications, 101(12), 1997, pp. 883-887
GROWTH BY SELECTIVE-AREA EPITAXY ON PATTERNED SUBSTRATES AND CHARACTERIZATION OF GAINAS INP NANOSTRUCTURES/
Authors: ROTH AP FINNIE P CHARBONNEAU S LACELLE C GUERINI C FRASER J BUCHANAN M FENG Y
Citation: Ap. Roth et al., GROWTH BY SELECTIVE-AREA EPITAXY ON PATTERNED SUBSTRATES AND CHARACTERIZATION OF GAINAS INP NANOSTRUCTURES/, Microelectronics, 28(8-10), 1997, pp. 909-913
CHARACTERIZATION OF BI12GEO20 PROCESSED IN A MICROGRAVITY ENVIRONMENT
Authors: MAFFEI N QUON DHH AOTA J CHEN TT MCCAFFREY J CHARBONNEAU S
Citation: N. Maffei et al., CHARACTERIZATION OF BI12GEO20 PROCESSED IN A MICROGRAVITY ENVIRONMENT, Journal of crystal growth, 181(4), 1997, pp. 382-389
FACETED GAINAS INP NANOSTRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/
Authors: FINNIE P CHARBONNEAU S BUCHANAN M LACELLE C FRASER J ROTH AP
Citation: P. Finnie et al., FACETED GAINAS INP NANOSTRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/, Journal of applied physics, 82(10), 1997, pp. 4883-4888
BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/
Authors: PAQUETTE M BEAUVAIS J BEERENS J POOLE PJ CHARBONNEAU S MINER CJ BLAAUW C
Citation: M. Paquette et al., BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/, Applied physics letters, 71(26), 1997, pp. 3749-3751
REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/
Authors: PIVA PG FAFARD S DION M BUCHANAN M CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pg. Piva et al., REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/, Applied physics letters, 70(13), 1997, pp. 1662-1664
BROADLY TUNABLE FEMTOSECOND PULSE GENERATION IN THE NEAR AND MIDINFRARED
Authors: HONG J BAWAGAN ADO CHARBONNEAU S STOLOW A
Citation: J. Hong et al., BROADLY TUNABLE FEMTOSECOND PULSE GENERATION IN THE NEAR AND MIDINFRARED, Applied optics, 36(9), 1997, pp. 1894-1897
THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION
Authors: POOLE PJ DAVIES M DION M FENG Y CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION, IEEE photonics technology letters, 8(9), 1996, pp. 1145-1147
DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER
Authors: POOLE PJ CHARBONNEAU S DION M AERS GC BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER, IEEE photonics technology letters, 8(1), 1996, pp. 16-18
STATE FILLING AND TIME-RESOLVED PHOTOLUMINESCENCE OF EXCITED-STATES IN INXGA1-XAS GAAS SELF-ASSEMBLED QUANTUM DOTS/
Authors: RAYMOND S FAFARD S POOLE PJ WOJS A HAWRYLAK P CHARBONNEAU S LEONARD D LEON R PETROFF PM MERZ JL
Citation: S. Raymond et al., STATE FILLING AND TIME-RESOLVED PHOTOLUMINESCENCE OF EXCITED-STATES IN INXGA1-XAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 54(16), 1996, pp. 11548-11554
PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP
Authors: BENZAQUEN R CHARBONNEAU S LEONELLI R ROTH AP
Citation: R. Benzaquen et al., PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP, Physical review. B, Condensed matter, 53(7), 1996, pp. 3627-3629
Risultati: 1-25 | 26-50 | 51-64