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Results:
1-14
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Results: 14
Authors:
LIN LY
ZHONG XR
CHEN NF
Citation: Ly. Lin et al., IMPROVEMENT OF STOICHIOMETRY IN SEMIINSULATING GALLIUM-ARSENIDE GROWNUNDER MICROGRAVITY, Journal of crystal growth, 191(3), 1998, pp. 586-588
Authors:
LIN LY
CHEN NF
ZHONG XR
HE HJ
LI CJ
Citation: Ly. Lin et al., RELATIONSHIP BETWEEN DEEP-LEVEL CENTERS AND STOICHIOMETRY IN SEMIINSULATING GALLIUM-ARSENIDE, Journal of applied physics, 84(10), 1998, pp. 5826-5827
Authors:
CHEN NF
RASENICK M
Citation: Nf. Chen et M. Rasenick, TUBULIN G-PROTEIN INTERACTION REGULATES CYTOSKELETAL MEDIATED CELL PROCESSES, Molecular biology of the cell, 8, 1997, pp. 839-839
Authors:
CHEN NF
HE HJ
WANG YT
LIN LY
Citation: Nf. Chen et al., PROPERTIES OF GAAS SINGLE-CRYSTALS GROWN BY MOLECULAR-BEAM EPITAXY ATLOW-TEMPERATURES, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 40(2), 1997, pp. 214-218
Authors:
CHEN NF
HE HJ
WANG YT
LIN LY
Citation: Nf. Chen et al., STOICHIOMETRIC DEFECTS IN SEMIINSULATING GAAS, Journal of crystal growth, 173(3-4), 1997, pp. 325-329
Authors:
CHEN NF
WANG YT
HE HJ
LIN LY
Citation: Nf. Chen et al., EXCESS ARSENIC IN GAAS GROWN AT LOW-TEMPERATURES BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 35(10A), 1996, pp. 1238-1240
Authors:
CHEN NF
WANG YT
HE HJ
LIN LY
Citation: Nf. Chen et al., EFFECTS OF POINT-DEFECTS ON LATTICE-PARAMETERS OF SEMICONDUCTORS, Physical review. B, Condensed matter, 54(12), 1996, pp. 8516-8521
Authors:
CHEN NF
HE HJ
WANG YT
PAN K
LIN LY
Citation: Nf. Chen et al., DISLOCATIONS AND PRECIPITATES IN SEMIINSULATING GALLIUM-ARSENIDE REVEALED BY ULTRASONIC ABRAHAMS-BUIOCCHI ETCHING, Journal of crystal growth, 167(3-4), 1996, pp. 766-768
Authors:
CHEN NF
WANG YT
HE HJ
WANG ZG
LIN LY
ODA O
Citation: Nf. Chen et al., NONDESTRUCTIVE MEASUREMENTS OF STOICHIOMETRY IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE BY X-RAY BOND METHOD, Applied physics letters, 69(25), 1996, pp. 3890-3892
Authors:
LIU WJ
CHEN NF
Citation: Wj. Liu et Nf. Chen, DECREASE OF DISLOCATIONS IN GAAS BY ISOELECTRONIC DOPING OF LIQUID-PHASE EPITAXIAL LAYERS, Journal of crystal growth, 154(1-2), 1995, pp. 19-22
Authors:
CHEN NF
ZHANG XL
DEN YW
Citation: Nf. Chen et al., DEGRADATION RELATED DEFECTS IN ALGAAS GAAS VISIBLE LASERS/, Journal of crystal growth, 148(3), 1995, pp. 219-222
Authors:
CHEN NF
KAN R
MILLER MH
Citation: Nf. Chen et al., ARE THE DISCOUNTS ON CLOSED-END FUNDS A SENTIMENT INDEX, The Journal of finance, 48(2), 1993, pp. 795-800
Authors:
CHEN NF
KAN R
MILLER MH
Citation: Nf. Chen et al., YES, DISCOUNTS ON CLOSED-END FUNDS ARE A SENTIMENT INDEX - A REJOINDER, The Journal of finance, 48(2), 1993, pp. 809-810
Authors:
CHEN NF
Citation: Nf. Chen, ULTRASONIC ETCHING OF GAAS IN CRO3-HF AQUEOUS-SOLUTIONS, Journal of crystal growth, 129(3-4), 1993, pp. 777-778
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