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Results: 1-25/58
Authors:
KWON YH
CHO YH
CHOE BD
PARK SK
JEONG WG
Citation: Yh. Kwon et al., EFFECTS OF SUBSTRATE MISORIENTATION ON THE FORMATION AND CHARACTERISTICS OF SELF-ASSEMBLED INP INGAP QUANTUM DOTS/, JPN J A P 2, 37(4A), 1998, pp. 366-368
Authors:
LEE NY
HWANG I
KIM JE
PARK HY
KWON HK
CHOE BD
LIM H
Citation: Ny. Lee et al., PHOTOLUMINESCENCE DUE TO HOLE CAPTURING OF DX- CENTERS IN IN0.32GA0.68P-S, Solid state communications, 105(1), 1998, pp. 1-5
Authors:
PARK BH
HYUN SJ
MOON CR
CHOE BD
LEE J
KIM CY
JO W
NOH TW
Citation: Bh. Park et al., IMPRINT FAILURES AND ASYMMETRIC ELECTRICAL-PROPERTIES INDUCED BY THERMAL-PROCESSES IN EPITAXIAL BI4TI3O12 THIN-FILMS, Journal of applied physics, 84(8), 1998, pp. 4428-4435
Authors:
KIM KJ
LEE MH
BAHNG JH
SHIM K
CHOE BD
Citation: Kj. Kim et al., OPTICAL-CONSTANTS AND ELECTRONIC INTERBAND-TRANSITIONS OF DISORDERED GAAS1-XPX ALLOYS, Journal of applied physics, 84(7), 1998, pp. 3696-3699
Authors:
MOON CR
CHOE BD
KWON SD
SHIN HK
LIM H
Citation: Cr. Moon et al., ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-DOPED QUANTUM-WELLS, Journal of applied physics, 84(5), 1998, pp. 2673-2683
Authors:
KIM I
RYU SW
CHOE BD
KIM HD
JEONG WG
Citation: I. Kim et al., MATRIX-METHOD FOR THE X-RAY PECKING CURVE SIMULATION, Journal of applied physics, 83(7), 1998, pp. 3932-3934
Authors:
CHOE JS
RYU SW
CHOE BD
LIM H
Citation: Js. Choe et al., EFFECT OF WET OXIDIZED ALXGA1-XAS LAYER ON THE INTERDIFFUSION OF INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 83(11), 1998, pp. 5779-5782
RECOMBINATION DYNAMICS IN N-ALXGA1-X N-IN0.5GA0.5P TYPE-II HETEROSTRUCTURES (VOL 73, PG 1245, 1998)/
Authors:
CHO YH
SONG JJ
LIM H
CHOE BD
LEE JI
KIM D
Citation: Yh. Cho et al., RECOMBINATION DYNAMICS IN N-ALXGA1-X N-IN0.5GA0.5P TYPE-II HETEROSTRUCTURES (VOL 73, PG 1245, 1998)/, Applied physics letters, 73(15), 1998, pp. 2219-2219
INFLUENCE OF PARTIAL DOPANT IONIZATION ON THE CAPACITANCE-VOLTAGE PROFILES OF DELTA-DOPED STRUCTURES
Authors:
MOON CR
KWON SD
LIM H
CHOE BD
Citation: Cr. Moon et al., INFLUENCE OF PARTIAL DOPANT IONIZATION ON THE CAPACITANCE-VOLTAGE PROFILES OF DELTA-DOPED STRUCTURES, Applied physics letters, 72(26), 1998, pp. 3491-3493
Authors:
MOON CR
CHOE BD
KWON SD
LIM H
Citation: Cr. Moon et al., SPATIAL-RESOLUTION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES, Applied physics letters, 72(10), 1998, pp. 1196-1198
Authors:
RYU SW
KIM HD
PARK SK
JEONG WG
CHOE BD
Citation: Sw. Ryu et al., DEPENDENCE OF ANISOTROPIC STRAIN RELAXATION ON COMPOSITION OF LATTICE-MISMATCHED INGAASP, JPN J A P 2, 36(2A), 1997, pp. 79-81
Authors:
GHO SJ
PARK SH
LIM H
CHOE BD
LEE CW
KO MK
KIM YT
Citation: Sj. Gho et al., NEGATIVE-RESISTANCE OF ALGAAS DIODES CO-DOPED WITH SI AND MN, JPN J A P 2, 36(11B), 1997, pp. 1481-1482
Authors:
RYU SW
KIM IK
JEONG WG
CHOE BD
PARK SH
Citation: Sw. Ryu et al., THEORETICAL INVESTIGATION OF GAIN AND LINEWIDTH ENHANCEMENT FACTOR FOR 1.55-MU-M TENSILE-STRAINED QUANTUM-WELL LASERS, Journal of lightwave technology, 15(4), 1997, pp. 711-716
Authors:
KWON HK
CHOE BD
KWON SD
LIM H
Citation: Hk. Kwon et al., DX-CENTERS AND OTHER DEEP LEVELS IN IN0.13GA0.82AS0.28P0.72, Journal of the Korean Physical Society, 30, 1997, pp. 143-146
Authors:
KWON YH
CHO YHH
CHOE BD
PARK SK
JEONG WG
YU JS
CHOO AG
KIM TL
Citation: Yh. Kwon et al., OPTICAL INVESTIGATION OF GAAS INGAP HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of the Korean Physical Society, 30, 1997, pp. 160-162
Authors:
MOON CR
KANG DW
CHOE BD
KANG I
KWON SD
SHIN HK
LIM H
Citation: Cr. Moon et al., SELF-CONSISTENT SIMULATION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES, Journal of the Korean Physical Society, 30(1), 1997, pp. 93-98
Authors:
CHO YH
KIM DS
CHOE BD
LIM H
LEE JI
KIM D
Citation: Yh. Cho et al., DYNAMICS OF ANTI-STOKES PHOTOLUMINESCENCE IN TYPE-II ALXGA1-XAS-GAINP2 HETEROSTRUCTURES - THE IMPORTANT ROLE OF LONG-LIVED CARRIERS NEAR THE INTERFACE, Physical review. B, Condensed matter, 56(8), 1997, pp. 4375-4378
Authors:
RYU SW
JEONG WG
KIM I
KIM HD
KIM HH
CHOE BD
PARK SH
Citation: Sw. Ryu et al., REDUCTION OF AS CARRYOVER BY PH3 OVERPRESSURE IN METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 179(1-2), 1997, pp. 26-31
Authors:
KWON HK
CHOE BD
LIM H
Citation: Hk. Kwon et al., PROPERTIES OF ELECTRON TRAPS IN IN1-XGAXASYP1-Y GROWN ON GAAS0.61P0.39, Journal of applied physics, 82(6), 1997, pp. 2969-2973
Authors:
KIM I
CHOE BD
PARK SK
JEONG WG
Citation: I. Kim et al., ANALYSIS OF ABNORMAL X-RAY-DIFFRACTION PEAK BROADENING FROM INGAAS GAAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 82(10), 1997, pp. 4865-4869
Authors:
MOON CR
CHOE BD
KWON SD
LIM H
Citation: Cr. Moon et al., DIFFERENCE OF INTERFACE-TRAP PASSIVATION IN SCHOTTKY CONTACTS FORMED ON (NH4)(2)S-X-TREATED GAAS AND IN0.5GA0.5P, Journal of applied physics, 81(6), 1997, pp. 2904-2906
Authors:
CHO YH
CHOE BD
KIM Y
LIM H
Citation: Yh. Cho et al., INTERFACE STATES IN IN0.5GA0.5P ALXGA1-XAS HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/, Journal of applied physics, 81(11), 1997, pp. 7362-7366
Authors:
YU S
KIM D
KIM DS
LEE YH
CHO YH
CHOE BD
LEE JH
Citation: S. Yu et al., FEMTOSECOND DEGENERATE 4-WAVE-MIXING IN 500 MU-M UNDOPED GAAS AND 350MU-M UNDOPED INP FAR BELOW BAND-GAP, Journal of applied physics, 81(10), 1997, pp. 6928-6933
Authors:
LEE JK
CHO YH
CHOE BD
KIM KS
JEON HI
LIM H
RAZEGHI M
Citation: Jk. Lee et al., SCHOTTKY-BARRIER HEIGHTS AND CONDUCTION-BAND OFFSETS OF IN1-XGAXAS1-YPY LATTICE-MATCHED TO GAAS, Applied physics letters, 71(7), 1997, pp. 912-914
Authors:
RYU SW
CHOE BD
JEONG WG
Citation: Sw. Ryu et al., DETERMINATION OF INTERDIFFUSION COEFFICIENTS OF CATIONS AND ANIONS ININGAAS INP SUPERLATTICE/, Applied physics letters, 71(12), 1997, pp. 1670-1672