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Results: 1-14 |
Results: 14
GRAIN-BOUNDARY-LIMITED TRANSPORT IN SEMICONDUCTING SNO2 THIN-FILMS - MODEL AND EXPERIMENTS
Authors: PRINS MWJ GROSSEHOLZ KO CILLESSEN JFM FEINER LF
Citation: Mwj. Prins et al., GRAIN-BOUNDARY-LIMITED TRANSPORT IN SEMICONDUCTING SNO2 THIN-FILMS - MODEL AND EXPERIMENTS, Journal of applied physics, 83(2), 1998, pp. 888-893
DRY-ETCHING OF ALL-OXIDE TRANSPARENT THIN-FILM MEMORY TRANSISTORS
Authors: GIESBERS JB PRINS MWJ CILLESSEN JFM VANESCH HA
Citation: Jb. Giesbers et al., DRY-ETCHING OF ALL-OXIDE TRANSPARENT THIN-FILM MEMORY TRANSISTORS, Microelectronic engineering, 35(1-4), 1997, pp. 71-74
THICKNESS DEPENDENCE OF THE SWITCHING VOLTAGE IN ALL-OXIDE FERROELECTRIC THIN-FILM CAPACITORS PREPARED BY PULSED-LASER DEPOSITION
Authors: CILLESSEN JFM PRINS MWJ WOLF RM
Citation: Jfm. Cillessen et al., THICKNESS DEPENDENCE OF THE SWITCHING VOLTAGE IN ALL-OXIDE FERROELECTRIC THIN-FILM CAPACITORS PREPARED BY PULSED-LASER DEPOSITION, Journal of applied physics, 81(6), 1997, pp. 2777-2783
DEPLETION-TYPE THIN-FILM TRANSISTORS WITH A FERROELECTRIC INSULATOR
Authors: PRINS MWJ ZINNEMERS SE CILLESSEN JFM GIESBERS JB
Citation: Mwj. Prins et al., DEPLETION-TYPE THIN-FILM TRANSISTORS WITH A FERROELECTRIC INSULATOR, Applied physics letters, 70(4), 1997, pp. 458-460
GROWTH, STRUCTURING AND CHARACTERIZATION OF ALL-OXIDE THIN-FILM DEVICES PREPARED BY PULSED-LASER DEPOSITION
Authors: CILLESSEN JFM WOLF RM GIESBERS JB BLOM PWM GROSSEHOLZ KO PASTOOR E
Citation: Jfm. Cillessen et al., GROWTH, STRUCTURING AND CHARACTERIZATION OF ALL-OXIDE THIN-FILM DEVICES PREPARED BY PULSED-LASER DEPOSITION, Applied surface science, 96-8, 1996, pp. 744-751
ELECTRICAL CHARACTERIZATION OF SEMICONDUCTING LA DOPED SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION
Authors: GROSSEHOLZ KO CILLESSEN JFM WASER R
Citation: Ko. Grosseholz et al., ELECTRICAL CHARACTERIZATION OF SEMICONDUCTING LA DOPED SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION, Applied surface science, 96-8, 1996, pp. 784-790
IMPROVED UNIFORMITY OF MULTIELEMENT THIN-FILMS PREPARED BY OFF-AXIS PULSED-LASER DEPOSITION USING A NEW HEATER DESIGN
Authors: CILLESSEN JFM DEJONG MJM CROIZE X
Citation: Jfm. Cillessen et al., IMPROVED UNIFORMITY OF MULTIELEMENT THIN-FILMS PREPARED BY OFF-AXIS PULSED-LASER DEPOSITION USING A NEW HEATER DESIGN, Review of scientific instruments, 67(9), 1996, pp. 3229-3237
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HETEROEPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS
Authors: DEKEIJSER M CILLESSEN JFM JANSSEN RBF DEVEIRMAN AEM DELEEUW DM
Citation: M. Dekeijser et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HETEROEPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS, Journal of applied physics, 79(1), 1996, pp. 393-402
A FERROELECTRIC TRANSPARENT THIN-FILM-TRANSISTOR
Authors: PRINS MWJ GROSSEHOLZ KO MULLER G CILLESSEN JFM GIESBERS JB WEENING RP WOLF RM
Citation: Mwj. Prins et al., A FERROELECTRIC TRANSPARENT THIN-FILM-TRANSISTOR, Applied physics letters, 68(25), 1996, pp. 3650-3652
FIELD-DEPENDENT PERMITTIVITY IN METAL-SEMICONDUCTING SRTIO3 SCHOTTKY DIODES
Authors: VANDERBERG RA BLOM PWM CILLESSEN JFM WOLF RM
Citation: Ra. Vanderberg et al., FIELD-DEPENDENT PERMITTIVITY IN METAL-SEMICONDUCTING SRTIO3 SCHOTTKY DIODES, Applied physics letters, 66(6), 1995, pp. 697-699
INCORPORATION OF ND IN PULSED-LASER-DEPOSITED COMPARED TO ION-IMPLANTED SRTIO3
Authors: OVERWIJK MHF CILLESSEN JFM KESSENER YARR TENNER MG
Citation: Mhf. Overwijk et al., INCORPORATION OF ND IN PULSED-LASER-DEPOSITED COMPARED TO ION-IMPLANTED SRTIO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 322-326
FERROELECTRIC SCHOTTKY DIODE
Authors: BLOM PWM WOLF RM CILLESSEN JFM KRIJN MPCM
Citation: Pwm. Blom et al., FERROELECTRIC SCHOTTKY DIODE, Physical review letters, 73(15), 1994, pp. 2107-2110
HETEROEPITAXIAL OXIDIC CONDUCTOR LA1-XSRXCOO3 PREPARED BY PULSED-LASER DEPOSITION
Authors: CILLESSEN JFM WOLF RM DEVEIRMAN AEM
Citation: Jfm. Cillessen et al., HETEROEPITAXIAL OXIDIC CONDUCTOR LA1-XSRXCOO3 PREPARED BY PULSED-LASER DEPOSITION, Applied surface science, 69(1-4), 1993, pp. 212-215
TEM AND XRD CHARACTERIZATION OF EPITAXIALLY GROWN PBTIO3 PREPARED BY PULSED-LASER DEPOSITION
Authors: DEVEIRMAN AEM TIMMERS J HAKKENS FJG CILLESSEN JFM WOLF RM
Citation: Aem. Deveirman et al., TEM AND XRD CHARACTERIZATION OF EPITAXIALLY GROWN PBTIO3 PREPARED BY PULSED-LASER DEPOSITION, Philips journal of research, 47(3-5), 1993, pp. 185-201
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