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Results:
1-13
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Results: 13
Authors:
FLUERARU C
COBIANU C
DASCALU D
FLUERARU M
Citation: C. Flueraru et al., MICROSCALE FRICTION INVESTIGATION OF POLYSILICON SURFACE USING SCANNING FORCE MICROSCOPY, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 29-33
Authors:
KOLEV SD
ADAM M
BARSONY I
VANDENBERG A
COBIANU C
KULINYI S
Citation: Sd. Kolev et al., MATHEMATICAL-MODELING OF A POROUS SILICON-BASED PELLISTOR-TYPE CATALYTIC FLAMMABLE-GAS SENSOR, Microelectronics, 29(4-5), 1998, pp. 235-239
Authors:
COBIANU C
SAVANIU C
BUIU O
DASCALU D
ZAHARESCU M
PARLOG C
VANDENBERG A
PECZ B
Citation: C. Cobianu et al., TIN DIOXIDE SOL-GEL DERIVED THAN FILMS DEPOSITED ON POROUS SILICON, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 114-120
Authors:
FLUERARU C
COBIANU C
COSMIN P
DASCALU D
Citation: C. Flueraru et al., SURFACE STUDIES OF CHEMICALLY VAPOR-DEPOSITED SILICON FILMS USING FRICTION FORCE MICROSCOPY, Thin solid films, 303(1-2), 1997, pp. 117-121
Authors:
PLUGARU R
VASILE E
COBIANU C
DASCALU D
Citation: R. Plugaru et al., INVESTIGATION OF THE SURFACE OF P-IMPLANTED LPCVD SILICON FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 240-242
Authors:
ONTALUS V
COBIANU C
VASILIU F
PARLOG C
Citation: V. Ontalus et al., CRYSTALLIZATION BEHAVIOR AND PHASE COEXISTENCE AT MORPHOTROPHIC PHASEBOUNDARIES IN PZT THIN-FILMS PREPARED BY SOL-GEL PROCESSING, Journal of Materials Science, 31(14), 1996, pp. 3639-3642
Authors:
COBIANU C
REM JB
KLOOTWIJK JH
WEUSTHOF MHH
HOLLEMAN J
WOERLEE PH
Citation: C. Cobianu et al., LPCVD SIO2 LAYERS PREPARED FROM SIH4 AND O-2 AT 450-DEGREES-C IN A RAPID THERMAL-PROCESSING REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 1005-1011
Authors:
REM JB
KLOOTWIJK JH
COBIANU C
HOLLEMAN J
VERWEIJ JF
Citation: Jb. Rem et al., ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2, Journal de physique. IV, 5(C5), 1995, pp. 113-118
Authors:
REM JB
KLOOTWIJK JH
COBIANU C
HOLLEMAN J
VERWEIJ JF
Citation: Jb. Rem et al., ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2, Journal de physique. IV, 5(C5), 1995, pp. 113-118
Authors:
GARDENIERS JGE
SMITH A
COBIANU C
Citation: Jge. Gardeniers et al., CHARACTERIZATION OF SOL-GEL PZT FILMS ON PT-COATED SUBSTRATES, Journal of micromechanics and microengineering, 5(2), 1995, pp. 153-155
Authors:
COBIANU C
POPA O
DASCALU D
Citation: C. Cobianu et al., ELECTRICAL-PROPERTIES OF INTERLEVEL DEPOSITED OXIDES RELATED TO POLYSILICON PREPARATION, Journal de physique. IV, 3(C3), 1993, pp. 467-473
Authors:
COBIANU C
POPA O
DASCALU D
Citation: C. Cobianu et al., ON THE ELECTRICAL-CONDUCTION IN THE INTERPOLYSILICON DIELECTRIC LAYERS, IEEE electron device letters, 14(5), 1993, pp. 213-215
Authors:
GAISEANU F
COBIANU C
DASCALU D
Citation: F. Gaiseanu et al., DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT, Journal of materials science letters, 12(20), 1993, pp. 1652-1653
Risultati:
1-13
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