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Citation: Pm. Lenahan et Jf. Conley, RESPONSE TO COMMENT ON A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON [J. APPL. PHYS. 83, 5591 (1998)], Journal of applied physics, 83(10), 1998, pp. 5593-5594
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Authors:
RAGLAND PC
CONLEY JF
PARKER WC
VANORMAN JA
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Citation: Jf. Conley et al., QUANTITATIVE MODEL OF RADIATION-INDUCED CHARGE TRAPPING IN SIO2, IEEE transactions on nuclear science, 44(6), 1997, pp. 1804-1809
Citation: Pc. Ragland et al., A MULTIVARIATE METHOD FOR DETERMINING THE PROVENANCE AND PROTOLITH OFMETASEDIMENTARY ROCKS - AN EXAMPLE FROM THE FORK MOUNTAIN FORMATION, SOUTHWESTERN VIRGINIA PIEDMONT, USA, Geochemical Journal, 31(5), 1997, pp. 275-288
Citation: Pm. Lenahan et Jf. Conley, A PHYSICALLY-BASED PREDICTIVE MODEL OF SI SIO2 INTERFACE-TRAP GENERATION RESULTING FROM THE PRESENCE OF HOLES IN THE SIO2/, Applied physics letters, 71(21), 1997, pp. 3126-3128
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Citation: Jf. Conley et Pm. Lenahan, HYDROGEN COMPLEXED EP (E'DELTA) CENTERS AND EP H-2 INTERACTIONS - IMPLICATIONS FOR EP STRUCTURE/, Microelectronic engineering, 28(1-4), 1995, pp. 35-38
Citation: Jf. Conley et Pm. Lenahan, ELECTRON-SPIN-RESONANCE ANALYSIS OF EP CENTER INTERACTIONS WITH H-2 -EVIDENCE FOR A LOCALIZED EP CENTER STRUCTURE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1740-1743
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Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2, Applied physics letters, 67(15), 1995, pp. 2179-2181
Citation: Jf. Conley et al., OBSERVATION AND ELECTRONIC CHARACTERIZATION OF NEW E' CENTER DEFECTS IN TECHNOLOGICALLY RELEVANT THERMAL SIO(2) ON SI - AN ADDITIONAL COMPLEXITY IN OXIDE CHARGE TRAPPING, Journal of applied physics, 76(5), 1994, pp. 2872-2880
Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE FOR AN IMPURITY-RELATED E'-LIKE HOLETRAPPING DEFECT IN THERMALLY GROWN SIO2 ON SI, Journal of applied physics, 76(12), 1994, pp. 8186-8188
Citation: Jf. Conley et al., OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI, Applied physics letters, 65(18), 1994, pp. 2281-2283
Citation: Jf. Conley et Pm. Lenahan, RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDSIN AMORPHOUS SIO2-FILMS ON SI, Microelectronic engineering, 22(1-4), 1993, pp. 215-218
Citation: Jf. Conley et Pm. Lenahan, MOLECULAR-HYDROGEN, E' CENTER HOLE TRAPS, AND RADIATION-INDUCED INTERFACE TRAPS IN MOS DEVICES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1335-1340