Authors:
Chien, FT
Chiu, HC
Yang, SC
Chen, CW
Chan, YJ
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Authors:
Huang, YH
Wu, JC
Chiang, TY
Chan, YJ
Huo, TI
Huang, YS
Hwang, SJ
Chang, FY
Lee, SD
Citation: Yh. Huang et al., Detection and viral nucleotide sequence analysis of transfusion-transmitted virus infection in acute fulminant and non-fulminant hepatitis, J VIRAL HEP, 7(1), 2000, pp. 56-63
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Citation: Ft. Chien et al., Monolithically integrated optoelectronic receivers by AlGaAs/InGaAs doped-channel heterostructures, MICROW OPT, 27(2), 2000, pp. 79-80
Citation: Mj. Yu et al., Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer, MICROW OPT, 26(4), 2000, pp. 232-234
Citation: Yh. Lin et Yj. Chan, 2.4 GHz single-balanced diode mixer fabricated on Al2O3 substrate by thin-film technology, MICROW OPT, 25(2), 2000, pp. 83-86
Citation: Ft. Chien et al., Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's, IEEE ELEC D, 21(2), 2000, pp. 60-62
Citation: Cp. Chen et al., Prenatal diagnosis of limb-body wall complex using two- and three-dimensional ultrasound, PRENAT DIAG, 20(12), 2000, pp. 1020-1020
Citation: Pq. Chen et Yj. Chan, Improved microwave performance on low-resistivity Si substrates by Si+ ionimplantation, IEEE MICR T, 48(9), 2000, pp. 1582-1585
Citation: Hc. Chiu et al., High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superiormicrowave power performance, ELECTR LETT, 36(23), 2000, pp. 1968-1969
Authors:
Chiu, HC
Chien, FT
Yang, SC
Kuo, CW
Chan, YJ
Citation: Hc. Chiu et al., Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer, ELECTR LETT, 36(15), 2000, pp. 1320-1322
Citation: Hh. Wu et Yj. Chan, High-Q inductors and low-loss bandpass filters on Al2O3 substrates by thin-film technology, MICROW OPT, 20(5), 1999, pp. 322-326
Citation: Ft. Chien et Yj. Chan, Improved voltage gain of transimpedance amplifier by AlGaAs InGaAs doped-channel FET's, IEEE DEVICE, 46(6), 1999, pp. 1094-1098
Citation: Ft. Chien et Yj. Chan, Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design, IEEE J SOLI, 34(8), 1999, pp. 1167-1170
Citation: Ls. Lai et al., InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching, ELECTR LETT, 35(19), 1999, pp. 1674-1676