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Results: 1-22 |
Results: 22
Laser-scanning probe microscope based nanoprocessing of electronics materials
Authors: Lu, YF Hu, B Mai, ZH Wang, WJ Chim, WK Chong, TC
Citation: Yf. Lu et al., Laser-scanning probe microscope based nanoprocessing of electronics materials, JPN J A P 1, 40(6B), 2001, pp. 4395-4398
Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures
Authors: Chim, WK Leong, KK Choi, WK
Citation: Wk. Chim et al., Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures, JPN J A P 1, 40(1), 2001, pp. 1-6
Structural characterisation of polycrystalline SiGe thin film
Authors: Teh, LK Choi, WK Bera, LK Chim, WK
Citation: Lk. Teh et al., Structural characterisation of polycrystalline SiGe thin film, SOL ST ELEC, 45(11), 2001, pp. 1963-1966
Analysis of the DCIV peaks in electrically stressed pMOSFETs
Authors: Bin Jie, B Chim, WK Li, MF Lo, KF
Citation: B. Bin Jie et al., Analysis of the DCIV peaks in electrically stressed pMOSFETs, IEEE DEVICE, 48(5), 2001, pp. 913-920
Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100)surfaces underneath the tip of a scanning tunneling microscope
Authors: Mai, ZH Lu, YF Huang, SM Chim, WK Pan, JS
Citation: Zh. Mai et al., Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100)surfaces underneath the tip of a scanning tunneling microscope, J VAC SCI B, 18(4), 2000, pp. 1853-1857
Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces
Authors: Lu, YF Mai, ZH Song, WD Chim, WK
Citation: Yf. Lu et al., Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces, APPL PHYS A, 70(4), 2000, pp. 403-406
Random telegraphic signals in rapid thermal annealed silicon-silicon oxidesystem
Authors: Chim, WK Choi, WK Leong, KK Teh, LK
Citation: Wk. Chim et al., Random telegraphic signals in rapid thermal annealed silicon-silicon oxidesystem, MAT SCI E B, 72(2-3), 2000, pp. 135-137
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
Authors: Yue, JMP Chim, WK Cho, BJ Chan, DSH Qin, WH Kim, YB Jang, SA Yeo, IS
Citation: Jmp. Yue et al., Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure, IEEE ELEC D, 21(3), 2000, pp. 130-132
Nano-modification on hydrogen-passivated Si surfaces by a laser-assisted scanning tunneling microscope operating in air
Authors: Mai, ZH Lu, YF Song, WD Chim, WK
Citation: Zh. Mai et al., Nano-modification on hydrogen-passivated Si surfaces by a laser-assisted scanning tunneling microscope operating in air, APPL SURF S, 154, 2000, pp. 360-364
Effects of high current conduction in sub-micron Ti-silicided films
Authors: Gan, CL Pey, KL Chim, WK Siah, SY
Citation: Cl. Gan et al., Effects of high current conduction in sub-micron Ti-silicided films, SOL ST ELEC, 44(10), 2000, pp. 1837-1845
Can physical analysis aid in device characterization?
Authors: Chan, DSH Chim, WK Phang, JCH Liu, YY Ng, TH Xiao, H
Citation: Dsh. Chan et al., Can physical analysis aid in device characterization?, J CRYST GR, 210(1-3), 2000, pp. 323-330
Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
Authors: Chim, WK Lim, PS
Citation: Wk. Chim et Ps. Lim, Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing, IEEE DEVICE, 47(2), 2000, pp. 473-481
Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing
Authors: Lim, PS Chim, WK
Citation: Ps. Lim et Wk. Chim, Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing, APPL PHYS L, 77(17), 2000, pp. 2719-2721
Stress-induced leakage current and lateral nonuniform charge generation inthermal oxides subjected to negative-gate-voltage impulse stressing
Authors: Lim, PS Chim, WK
Citation: Ps. Lim et Wk. Chim, Stress-induced leakage current and lateral nonuniform charge generation inthermal oxides subjected to negative-gate-voltage impulse stressing, JPN J A P 1, 38(4B), 1999, pp. 2652-2655
Electromagnetic calculations of the near field of a tip under polarized laser irradiation
Authors: Lu, YF Mai, ZH Chim, WK
Citation: Yf. Lu et al., Electromagnetic calculations of the near field of a tip under polarized laser irradiation, JPN J A P 1, 38(10), 1999, pp. 5910-5915
DC voltage-voltage method to measure the interface traps in sub-micron MOSTs
Authors: Jie, BB Li, MF Chim, WK Chan, DSH Lo, KF
Citation: Bb. Jie et al., DC voltage-voltage method to measure the interface traps in sub-micron MOSTs, SEMIC SCI T, 14(7), 1999, pp. 621-627
Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films
Authors: Choi, WK Han, KK Chim, WK
Citation: Wk. Choi et al., Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films, THIN SOL FI, 344, 1999, pp. 108-110
The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate (vol 14, pg 1563, 1999)
Authors: Liu, X Phang, JCH Chan, DSH Chim, WK
Citation: X. Liu et al., The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate (vol 14, pg 1563, 1999), J PHYS D, 32(21), 1999, pp. 2832-2832
The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate
Authors: Liu, X Phang, JCH Chan, DSH Chim, WK
Citation: X. Liu et al., The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate, J PHYS D, 32(14), 1999, pp. 1563-1569
An improved drain-current-conductance method with substrate back-biasing
Authors: Tan, CB Chim, WK Chan, DSH Lou, CL
Citation: Cb. Tan et al., An improved drain-current-conductance method with substrate back-biasing, IEEE DEVICE, 46(2), 1999, pp. 431-433
Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip
Authors: Lu, YF Mai, ZH Qiu, G Chim, WK
Citation: Yf. Lu et al., Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip, APPL PHYS L, 75(16), 1999, pp. 2359-2361
Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence
Authors: Liu, X Chan, DSH Chim, WK Phang, JCH
Citation: X. Liu et al., Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence, APPL PHYS L, 73(24), 1998, pp. 3548-3549
Risultati: 1-22 |