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Results: 1-25 | 26-29
Results: 1-25/29
Novel method for the formation of an aluminum parting layer in the fabrication of field emitter arrays
Authors: Kang, SY Jung, MY Hwang, CS Cho, YR Song, YH Lee, SK Lee, JH Cho, KI
Citation: Sy. Kang et al., Novel method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, J VAC SCI B, 19(3), 2001, pp. 925-928
Patterning technology of carbon nanotubes for field emission displays
Authors: Cho, YR Lee, JH Song, YH Kang, SY Jung, MY Hwang, CS Cho, KI
Citation: Yr. Cho et al., Patterning technology of carbon nanotubes for field emission displays, J VAC SCI B, 19(3), 2001, pp. 1012-1015
Effect of NO(Si3N4/SiO2) layers on the electrical properties of MFISFET using SBT(SrBi2Ta2O9) materials
Authors: You, IK Lee, WJ Yang, IS Yu, BG Cho, KI Kim, SH
Citation: Ik. You et al., Effect of NO(Si3N4/SiO2) layers on the electrical properties of MFISFET using SBT(SrBi2Ta2O9) materials, INTEGR FERR, 33(1-4), 2001, pp. 177-184
Photolithography-based carbon nanotubes patterning for field emission displays
Authors: Cho, YR Lee, JH Song, YH Kang, SY Hwang, CS Jung, MY Kim, DH Lee, SK Uhm, HS Cho, KI
Citation: Yr. Cho et al., Photolithography-based carbon nanotubes patterning for field emission displays, MAT SCI E B, 79(2), 2001, pp. 128-132
Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H-2/Ar inductively coupled plasma
Authors: Lee, BY Jung, SY Lee, JL Park, YJ Paek, MC Cho, KI
Citation: By. Lee et al., Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H-2/Ar inductively coupled plasma, SEMIC SCI T, 16(6), 2001, pp. 471-473
Microfabrication and characteristics of double-rectangular spiral type thin-film inductors with an upper NiFe magnetic core
Authors: Kim, SG Yun, EJ Kim, JY Kim, J Cho, KI
Citation: Sg. Kim et al., Microfabrication and characteristics of double-rectangular spiral type thin-film inductors with an upper NiFe magnetic core, J APPL PHYS, 90(7), 2001, pp. 3533-3538
High-voltage power integrated circuit technology using SOI for driving plasma display panels
Authors: Kim, J Roh, TM Kim, SG Song, QS Lee, DW Koo, JG Cho, KI Ma, DS
Citation: J. Kim et al., High-voltage power integrated circuit technology using SOI for driving plasma display panels, IEEE DEVICE, 48(6), 2001, pp. 1256-1263
Optical characteristics of silicon semiconductor bridges under high current density conditions
Authors: Kim, J Roh, TM Cho, KI Jungling, KC
Citation: J. Kim et al., Optical characteristics of silicon semiconductor bridges under high current density conditions, IEEE DEVICE, 48(5), 2001, pp. 852-857
Etch characteristics of Cr by using Cl-2/O-2 gas mixtures with electron cyclotron resonance plasma
Authors: Kang, SY Kwon, KH Kim, SI Lee, SK Jung, MY Cho, YR Song, YH Lee, JH Cho, KI
Citation: Sy. Kang et al., Etch characteristics of Cr by using Cl-2/O-2 gas mixtures with electron cyclotron resonance plasma, J ELCHEM SO, 148(5), 2001, pp. G237-G240
Diameter-controlled growth of carbon nanotubes using thermal chemical vapor deposition
Authors: Lee, CJ Lyu, SC Cho, YR Lee, JH Cho, KI
Citation: Cj. Lee et al., Diameter-controlled growth of carbon nanotubes using thermal chemical vapor deposition, CHEM P LETT, 341(3-4), 2001, pp. 245-249
Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays
Authors: Sohn, JI Lee, S Song, YH Choi, SY Cho, KI Nam, KS
Citation: Ji. Sohn et al., Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays, APPL PHYS L, 78(7), 2001, pp. 901-903
Phase formations and electrical properties of (SrxBa1-x)Bi2Ta2O9 thin films
Authors: Lee, WJ You, IK Yang, IS Yu, BG Cho, KI
Citation: Wj. Lee et al., Phase formations and electrical properties of (SrxBa1-x)Bi2Ta2O9 thin films, JPN J A P 1, 39(9B), 2000, pp. 5469-5471
Trench formation and filling technique for dielectric isolation of plasma display panel driver integrated circuits
Authors: Kim, SG Kim, J Koo, JG Nam, KS Cho, KI Bae, IH
Citation: Sg. Kim et al., Trench formation and filling technique for dielectric isolation of plasma display panel driver integrated circuits, J VAC SCI B, 18(5), 2000, pp. 2482-2485
Dependence of substrate deflection on spacer pitch in emissive flat panel displays
Authors: Cho, YR Kim, HS Oh, JY Mun, JD Choi, JO Lee, JH Cho, KI Ahn, S
Citation: Yr. Cho et al., Dependence of substrate deflection on spacer pitch in emissive flat panel displays, MAT SCI E B, 77(1), 2000, pp. 6-10
A novel simplified process for fabricating a very high density P-channel trench gate power MOSFET
Authors: Nam, KS Lee, JW Kim, SG Roh, TM Park, HS Koo, JG Cho, KI
Citation: Ks. Nam et al., A novel simplified process for fabricating a very high density P-channel trench gate power MOSFET, IEEE ELEC D, 21(7), 2000, pp. 365-367
Well-aligned carbon nanotubes grown on a large-area Si substrate by thermal chemical-vapor deposition
Authors: Lee, CJ Han, JH Yoo, JE Kang, SY Lee, JH Cho, KI
Citation: Cj. Lee et al., Well-aligned carbon nanotubes grown on a large-area Si substrate by thermal chemical-vapor deposition, J KOR PHYS, 37(6), 2000, pp. 858-861
Highly reliable trench DMOSFET realized by using trench corner rounding
Authors: Kim, SG Kim, J Koo, JG Nam, KS Cho, KI Lee, JW Son, JS
Citation: Sg. Kim et al., Highly reliable trench DMOSFET realized by using trench corner rounding, J KOR PHYS, 37(6), 2000, pp. 882-885
High-voltage SOI power IC technology with non-RESURF n-LDMOSFET and RESURFp-LDMOSFET for PDP scan-driver applications
Authors: Roh, TM Lee, DW Kim, J Kim, SG Song, QS Kang, JY Koo, JG Nam, KS Cho, KI
Citation: Tm. Roh et al., High-voltage SOI power IC technology with non-RESURF n-LDMOSFET and RESURFp-LDMOSFET for PDP scan-driver applications, J KOR PHYS, 37(6), 2000, pp. 889-892
The effect of Pd coating on electron emission from silicon field emitter arrays
Authors: Lee, JL Oh, SP Han, SY Kang, SY Lee, JH Cho, KI
Citation: Jl. Lee et al., The effect of Pd coating on electron emission from silicon field emitter arrays, J APPL PHYS, 87(10), 2000, pp. 7349-7353
Explicit and closed-form expressions for describing magnetic behaviors of uniaxial anisotropy materials
Authors: Hur, J Paek, MC Cho, KI Shin, SC
Citation: J. Hur et al., Explicit and closed-form expressions for describing magnetic behaviors of uniaxial anisotropy materials, APPL PHYS L, 76(4), 2000, pp. 472-474
Glancing-angle electron beam bombardment for modification of GaN epilayer growth using plasma-assisted molecular beam epitaxy
Authors: Shim, KH Paek, MC Cho, KI
Citation: Kh. Shim et al., Glancing-angle electron beam bombardment for modification of GaN epilayer growth using plasma-assisted molecular beam epitaxy, JPN J A P 1, 38(4A), 1999, pp. 2007-2008
Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulators
Authors: Lee, WJ Shin, CH Cho, CR Lyu, JS Kim, BW Yu, BG Cho, KI
Citation: Wj. Lee et al., Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulators, JPN J A P 1, 38(4A), 1999, pp. 2039-2043
Multilayered tantalum-aluminum oxide films grown by atomic layer deposition
Authors: Kim, YS Kang, JS Yun, SJ Cho, KI
Citation: Ys. Kim et al., Multilayered tantalum-aluminum oxide films grown by atomic layer deposition, J KOR PHYS, 35, 1999, pp. S216-S220
Fabrication of silicon field-emitter arrays by using low-temperature processes
Authors: Kang, SY Lee, JH Song, YH Cho, KI Kim, BW Kwon, KH Kim, DK
Citation: Sy. Kang et al., Fabrication of silicon field-emitter arrays by using low-temperature processes, J KOR PHYS, 35, 1999, pp. S444-S446
Effects of RF plasma parameters on the growth of InGaN GaN heterostructures using plasma-assisted molecular beam epitaxy
Authors: Shim, KH Paek, MC Kim, KH Hong, SU Cho, KI Lee, HG Kim, J
Citation: Kh. Shim et al., Effects of RF plasma parameters on the growth of InGaN GaN heterostructures using plasma-assisted molecular beam epitaxy, J KOR PHYS, 34, 1999, pp. S350-S354
Risultati: 1-25 | 26-29