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Citation: Yw. Ho et al., Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using Raman spectroscopy, RBS and TEM, SCR MATER, 44(8-9), 2001, pp. 1291-1295
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Citation: H. Inoue et al., Effect of ball-milling with Ni and Raney Ni on surface structural characteristics of TiV2.1Ni0.3 alloy, J ALLOY COM, 325(1-2), 2001, pp. 299-303
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Citation: Hj. Lee et al., Enhancement of CO sensitivity of indium oxide-based semiconductor gas sensor through ultra-thin cobalt adsorption, SENS ACTU-B, 79(2-3), 2001, pp. 200-205
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Citation: Lk. Bera et al., High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films, IEEE ELEC D, 22(8), 2001, pp. 387-389
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Citation: Sj. Wang et al., Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics, SEMIC SCI T, 16(3), 2001, pp. L13-L16
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Citation: Sj. Wang et al., RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ions, SURF REV L, 8(5), 2001, pp. 521-526
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Citation: A. Natarajan et al., Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films, SOL ST ELEC, 45(11), 2001, pp. 1957-1961
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Citation: J. Tsubaki et al., Effects of sodium butyrate on expression of members of the ICF-binding protein superfamily in human mammary epithelial cells, J ENDOCR, 169(1), 2001, pp. 97-110
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Citation: Jh. Song et al., Twinned LaAlO3 substrate effect on epitaxially grown La-Ca-Mn-O thin film crystalline structure, J CRYST GR, 223(1-2), 2001, pp. 129-134
Citation: Wk. Choi et al., Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films, J APPL PHYS, 90(11), 2001, pp. 5819-5824
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Citation: Wk. Choi et al., Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films, J APPL PHYS, 89(3), 2001, pp. 1942-1947