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Results: 1-25 | 26-30
Results: 1-25/30
Carrier transfer between V-grooved quantum wire and vertical quantum well
Authors: Lu, W Liu, XQ Li, ZF Shen, SC Zhao, QX Fu, Y Willander, M Tan, HH Jagadish, C Zou, J Cockayne, DJH
Citation: W. Lu et al., Carrier transfer between V-grooved quantum wire and vertical quantum well, PHYS LETT A, 280(1-2), 2001, pp. 77-80
Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images
Authors: Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X
Citation: Xz. Liao et al., Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images, J APPL PHYS, 90(6), 2001, pp. 2725-2729
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Authors: Fu, Y Willander, M Liu, XQ Lu, W Shen, SC Tan, HH Jagadish, C Zou, J Cockayne, DJH
Citation: Y. Fu et al., Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire, J APPL PHYS, 89(4), 2001, pp. 2351-2356
Annealing effects on the microstructure of Ge/Si(001) quantum dots
Authors: Liao, XZ Zou, J Cockayne, DJH Wan, J Jiang, ZM Jin, G Wang, KL
Citation: Xz. Liao et al., Annealing effects on the microstructure of Ge/Si(001) quantum dots, APPL PHYS L, 79(9), 2001, pp. 1258-1260
Celebrations in pioneering electron microscopy: A symposium in honor of Professor Archie Howie - Introduction
Authors: Gai, PL Boyes, ED Carter, CB Cockayne, DJH Marks, LD Pennycook, SJ
Citation: Pl. Gai et al., Celebrations in pioneering electron microscopy: A symposium in honor of Professor Archie Howie - Introduction, MICROS MICR, 6(4), 2000, pp. 281-284
Characterization of amorphous materials by electron diffraction and atomistic modeling
Authors: Cockayne, DJH McKenzie, DR McBride, W Goringe, C McCulloch, D
Citation: Djh. Cockayne et al., Characterization of amorphous materials by electron diffraction and atomistic modeling, MICROS MICR, 6(4), 2000, pp. 329-334
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Authors: Fu, Y Willander, M Lu, W Liu, XQ Shen, SC Jagadish, C Gal, M Zou, J Cockayne, DJH
Citation: Y. Fu et al., Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire, PHYS REV B, 61(12), 2000, pp. 8306-8311
Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)Bquantum dots
Authors: Lobo, C Perret, N Morris, D Zou, J Cockayne, DJH Johnston, MB Gal, M Leon, R
Citation: C. Lobo et al., Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)Bquantum dots, PHYS REV B, 62(4), 2000, pp. 2737-2742
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantumwires
Authors: Zhao, QX Willander, M Lu, W Liu, XQ Shen, SC Tan, HH Jagadish, C Zou, J Cockayne, DJH
Citation: Qx. Zhao et al., Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantumwires, J APPL PHYS, 88(5), 2000, pp. 2519-2522
Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Authors: Russell, JJ Zou, J Moon, AR Cockayne, DJH
Citation: Jj. Russell et al., Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy, J APPL PHYS, 88(3), 2000, pp. 1307-1311
Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
Authors: Wong-Leung, J Fatima, S Jagadish, C Fitz Gerald, JD Chou, CT Zou, J Cockayne, DJH
Citation: J. Wong-leung et al., Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon, J APPL PHYS, 88(3), 2000, pp. 1312-1318
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Authors: Liu, XQ Lu, W Chen, XS Shen, SC Tan, HH Yuan, S Jagadish, C Johnston, MB Dao, LV Gal, M Zou, J Cockayne, DJH
Citation: Xq. Liu et al., Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing, J APPL PHYS, 87(3), 2000, pp. 1566-1568
Peter Goodman
Authors: Cockayne, DJH Gjonnes, J Humphreys, CJ Lehmpfuhl, G Murphy, J Shmueli, U Spence, JCH Tanaka, M Witte, NS
Citation: Djh. Cockayne et al., Peter Goodman, J APPL CRYS, 33, 2000, pp. 1302-1302
Fullerene blacks and cathode deposits derived from plasma arcing of graphite with naphthalene
Authors: Wilson, MA Moy, A Rose, H Kannangara, GSK Young, BR McCulloch, DG Cockayne, DJH
Citation: Ma. Wilson et al., Fullerene blacks and cathode deposits derived from plasma arcing of graphite with naphthalene, FUEL, 79(1), 2000, pp. 47-56
Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
Authors: Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X Leon, R
Citation: Xz. Liao et al., Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands, APPL PHYS L, 77(9), 2000, pp. 1304-1306
Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
Authors: Leon, R Wellman, J Liao, XZ Zou, J Cockayne, DJH
Citation: R. Leon et al., Adatom condensation and quantum dot sizes in InGaAs/GaAs (001), APPL PHYS L, 76(12), 2000, pp. 1558-1560
Reduced density function analysis using convergent electron illumination and iterative blind deconvolution
Authors: McBride, WE Cockayne, DJH Goringe, CM
Citation: We. Mcbride et al., Reduced density function analysis using convergent electron illumination and iterative blind deconvolution, ULTRAMICROS, 76(3), 1999, pp. 115-123
Inhibited carrier transfer in ensembles of isolated quantum dots
Authors: Lobo, C Leon, R Marcinkevicius, S Yang, W Sercel, PC Liao, XZ Zou, J Cockayne, DJH
Citation: C. Lobo et al., Inhibited carrier transfer in ensembles of isolated quantum dots, PHYS REV B, 60(24), 1999, pp. 16647-16651
Strain relaxation by alloying effects in Ge islands grown on Si(001)
Authors: Liao, XZ Zou, J Cockayne, DJH Qin, J Jiang, ZM Wang, X Leon, R
Citation: Xz. Liao et al., Strain relaxation by alloying effects in Ge islands grown on Si(001), PHYS REV B, 60(23), 1999, pp. 15605-15608
Ensemble interactions in strained semiconductor quantum dots
Authors: Leon, R Marcinkevicius, S Liao, XZ Zou, J Cockayne, DJH Fafard, S
Citation: R. Leon et al., Ensemble interactions in strained semiconductor quantum dots, PHYS REV B, 60(12), 1999, pp. R8517-R8520
Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
Authors: Zou, J Liao, XZ Cockayne, DJH Leon, R
Citation: J. Zou et al., Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate, PHYS REV B, 59(19), 1999, pp. 12279-12282
Professor Alexander F. Moodie - 75 years
Authors: Cockayne, DJH Cowley, JM Etheridge, J Gjonnes, J Kato, N Spence, JCH
Citation: Djh. Cockayne et al., Professor Alexander F. Moodie - 75 years, ACT CRYST A, 55(1), 1999, pp. 103-104
Experimental and theoretical characterization of structure in thin disordered films
Authors: McCulloch, DG McKenzie, DR Goringe, CM Cockayne, DJH McBride, W Green, DC
Citation: Dg. Mcculloch et al., Experimental and theoretical characterization of structure in thin disordered films, ACT CRYST A, 55(1), 1999, pp. 178-187
Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
Authors: Leon, R Lobo, C Liao, XZ Zou, J Cockayne, DJH Fafard, S
Citation: R. Leon et al., Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots, THIN SOL FI, 357(1), 1999, pp. 40-45
Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots(vol 82, pg 5148, 1999)
Authors: Liao, XZ Zou, J Cockayne, DJH Leon, R Lobo, C
Citation: Xz. Liao et al., Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots(vol 82, pg 5148, 1999), PHYS REV L, 83(6), 1999, pp. 1273-1273
Risultati: 1-25 | 26-30