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Results:
1-18
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Results: 18
Authors:
Delemotte, P
Bue, F
Crosnier, Y
Citation: P. Delemotte et al., Simulate IMD in RF amplifiers with memory effects, MICROWAV RF, 40(8), 2001, pp. 85
Authors:
Touirat, M
Roger, M
Pesant, JC
Ajram, S
Crosnier, Y
Salmer, G
Citation: M. Touirat et al., Optimum Au/WSi 0.3 mu m-gate-length n-HIGFETs for microwave power applications in X band, IEEE ELEC D, 22(4), 2001, pp. 163-165
Authors:
Gaquiere, C
Bue, F
Delemotte, P
Crosnier, Y
Carnez, B
Pons, D
Citation: C. Gaquiere et al., Effects on the linearity in Ka band of single or double-recessed PHEMT's, IEEE MICR G, 10(7), 2000, pp. 267-269
Authors:
Gaquiere, C
Trassaert, S
Boudart, B
Crosnier, Y
Citation: C. Gaquiere et al., High-power GaN MESFET on sapphire substrate, IEEE MICR G, 10(1), 2000, pp. 19-20
Authors:
Delemotte, P
Crosnier, Y
Citation: P. Delemotte et Y. Crosnier, Predict NPR for RF modules using system simulation, MICROWAV RF, 39(7), 2000, pp. 55
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs, SOL ST ELEC, 44(9), 2000, pp. 1685-1688
Authors:
Zaknoune, M
Schuler, O
Piotrowicz, S
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30
Authors:
Hue, X
Boudart, B
Bonte, B
Crosnier, Y
Citation: X. Hue et al., Uniformity improvement of linear power pHEMTs using a very high selective wet etching, MICROW OPT, 23(3), 1999, pp. 192-194
Authors:
Allam, R
Kolanowski, C
Paillot, JM
Duvanaud, C
Crosnier, Y
Citation: R. Allam et al., Influence of the source inductance parasitic effect on the conversion gainof an HEMT gate mixer, MICROW OPT, 22(3), 1999, pp. 149-151
Authors:
Gaquiere, C
Lafont, JP
Crosnier, Y
Citation: C. Gaquiere et al., Pulsed bias pulsed RF characterization measurement system of FET at constant intrinsic voltages, MICROW OPT, 20(5), 1999, pp. 349-352
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances, ELECTR LETT, 35(6), 1999, pp. 501-502
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy, ELECTR LETT, 35(20), 1999, pp. 1776-1777
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer, ELECTR LETT, 35(19), 1999, pp. 1670-1671
Authors:
Gaquiere, C
Bollaert, S
Zaknoune, M
Cordier, Y
Theron, D
Crosnier, Y
Citation: C. Gaquiere et al., Influence on power performances at 60GHz of indium composition in metamorphic HEMTs, ELECTR LETT, 35(17), 1999, pp. 1489-1491
Authors:
Trassaert, S
Boudart, B
Gaquiere, C
Theron, D
Crosnier, Y
Huet, F
Poisson, MA
Citation: S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
Authors:
Gaquiere, C
Miraumont, P
Crosnier, Y
Citation: C. Gaquiere et al., Measurement technique for determining impact ionisation in HEMTs, ELECTR LETT, 35(14), 1999, pp. 1146-1147
Authors:
Gaquiere, C
Bourcier, E
Piotrowicz, S
Crosnier, Y
Citation: C. Gaquiere et al., High power added efficiency at 35GHz on InP DH HEMTs, ELECTR LETT, 34(25), 1998, pp. 2438-2439
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