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Results:
1-19
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Results: 19
Authors:
DANNEFAER S
KERR D
Citation: S. Dannefaer et D. Kerr, CHARACTERIZATION OF VACANCIES IN AS-GROWN AND IRRADIATED DIAMONDS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 339-341
Authors:
AVALOS V
DANNEFAER S
Citation: V. Avalos et S. Dannefaer, IMPURITY-VACANCY COMPLEXES IN ELECTRON-IRRADIATED SILICON, Physical review. B, Condensed matter, 58(3), 1998, pp. 1331-1342
Authors:
DANNEFAER S
PUFF W
KERR D
Citation: S. Dannefaer et al., POSITRON LINE-SHAPE PARAMETERS AND LIFETIMES FOR SEMICONDUCTORS - SYSTEMATICS AND TEMPERATURE EFFECTS, Physical review. B, Condensed matter, 55(4), 1997, pp. 2182-2187
Authors:
BRETAGNON T
DANNEFAER S
KERR D
Citation: T. Bretagnon et al., POSITRON-ANNIHILATION INVESTIGATIONS OF VACANCIES IN INP PRODUCED BY ELECTRON-IRRADIATION AT ROOM-TEMPERATURE, Journal of applied physics, 81(8), 1997, pp. 3446-3452
Authors:
AVALOS V
DANNEFAER S
Citation: V. Avalos et S. Dannefaer, POSITRON-ANNIHILATION INVESTIGATION OF VACANCY AGGLOMERATION IN ELECTRON-IRRADIATED FLOAT-ZONE SILICON, Physical review. B, Condensed matter, 54(3), 1996, pp. 1724-1728
Authors:
DANNEFAER S
FRIESSNEGG T
KERR D
UEDONO A
LI XH
TANIGAWA S
Citation: S. Dannefaer et al., ANNIHILATION OF POSITRONIUM IN ALPHA-SIO2 INVESTIGATED BY COMBINED ANGULAR-CORRELATION AND LIFETIME MEASUREMENTS, Physical review. B, Condensed matter, 54(21), 1996, pp. 15051-15055
Authors:
DANNEFAER S
ZHU W
BRETAGNON T
KERR D
Citation: S. Dannefaer et al., VACANCIES IN POLYCRYSTALLINE DIAMOND FILMS, Physical review. B, Condensed matter, 53(4), 1996, pp. 1979-1984
Authors:
DANNEFAER S
BRETAGNON T
KERR D
Citation: S. Dannefaer et al., A POSITRON LIFETIME INVESTIGATION OF INP ELECTRON-IRRADIATED AT 100 K, Journal of applied physics, 80(7), 1996, pp. 3750-3756
Authors:
DANNEFAER S
KERR D
CRAIGEN D
BRETAGNON T
TELIERCIO T
FOUCARAN A
Citation: S. Dannefaer et al., A POSITRON-ANNIHILATION INVESTIGATION OF POROUS SILICON, Journal of applied physics, 79(12), 1996, pp. 9110-9117
Authors:
DANNEFAER S
Citation: S. Dannefaer, POSITRON-ANNIHILATION IN DIAMOND, SILICON AND SILICON-CARBIDE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 59-63
Authors:
DANNEFAER S
CRAIGEN D
KERR D
Citation: S. Dannefaer et al., CARBON AND SILICON VACANCIES IN ELECTRON-IRRADIATED 6H-SIC, Physical review. B, Condensed matter, 51(3), 1995, pp. 1928-1930
Authors:
DANNEFAER S
BRETAGNON T
FOUCARAN A
TALIERCIO T
KERR D
Citation: S. Dannefaer et al., POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 171-173
Authors:
DANNEFAER S
BRETAGNON T
Citation: S. Dannefaer et T. Bretagnon, CHARACTER AND DISTRIBUTION OF VACANCIES IN CZOCHRALSKI-GROWN SILICON INGOTS, Journal of applied physics, 77(11), 1995, pp. 5584-5588
Authors:
DANNEFAER S
KERR D
Citation: S. Dannefaer et D. Kerr, POSITRON-LIFETIME MEASUREMENTS BETWEEN 300-K AND 800-K IN GAAS AND GAP, Physical review. B, Condensed matter, 50(19), 1994, pp. 14096-14103
Authors:
DANNEFAER S
BRETAGNON T
KERR D
Citation: S. Dannefaer et al., POSITRON LIFETIME INVESTIGATIONS OF DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 2(12), 1993, pp. 1479-1482
Authors:
DANNEFAER S
KERR D
Citation: S. Dannefaer et D. Kerr, POSITRON BINDING-ENERGIES AND SPECIFIC TRAPPING RATES FOR MONOVACANCIES IN GAAS AND INSB, Physical review. B, Condensed matter, 48(12), 1993, pp. 9142-9145
Authors:
DANNEFAER S
BRETAGNON T
KERR D
Citation: S. Dannefaer et al., VACANCY-TYPE DEFECTS IN CRYSTALLINE AND AMORPHOUS SIO2, Journal of applied physics, 74(2), 1993, pp. 884-890
Authors:
BRETAGNON T
DANNEFAER S
KERR D
Citation: T. Bretagnon et al., INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY, Journal of applied physics, 73(9), 1993, pp. 4697-4699
Authors:
DANNEFAER S
MASCHER P
KERR D
Citation: S. Dannefaer et al., ANNEALING STUDIES OF VACANCIES IN PROTON IRRADIATED SILICON, Journal of applied physics, 73(8), 1993, pp. 3740-3743
Risultati:
1-19
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