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Results: 26-50/64
Authors:
RAMMOHAN K
RICH DH
MACDOUGAL MH
DAPKUS PD
Citation: K. Rammohan et al., THERMAL-PROCESSING OF STRAINED INGAAS GAAS QUANTUM-WELL HETEROSTRUCTURES BONDED TO SI VIA AN EPITAXIAL LIFT-OFF TECHNIQUE/, Applied physics letters, 70(12), 1997, pp. 1599-1601
Authors:
MACDOUGAL MH
YANG GM
BOND AE
LIN CK
TISHININ D
DAPKUS PD
Citation: Mh. Macdougal et al., ELECTRICALLY-PUMPED VERTICAL-CAVITY LASERS WITH ALXOY-GAAS REFLECTORS, IEEE photonics technology letters, 8(3), 1996, pp. 310-312
Authors:
CHENG Y
DAPKUS PD
MACDOUGAL MH
YANG GM
Citation: Y. Cheng et al., LASING CHARACTERISTICS OF HIGH-PERFORMANCE NARROW-STRIPE INGAAS-GAAS QUANTUM-WELL LASERS CONFINED BY ALAS NATIVE-OXIDE, IEEE photonics technology letters, 8(2), 1996, pp. 176-178
EFFECTS OF CURRENT SPREADING UNDER OXIDE CURRENT APERTURE IN VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors:
YANG GM
MACDOUGAL MH
DAPKUS PD
Citation: Gm. Yang et al., EFFECTS OF CURRENT SPREADING UNDER OXIDE CURRENT APERTURE IN VERTICAL-CAVITY SURFACE-EMITTING LASERS, Journal of applied physics, 80(9), 1996, pp. 4837-4840
Authors:
MATHUR A
DAPKUS PD
Citation: A. Mathur et Pd. Dapkus, FABRICATION, CHARACTERIZATION AND ANALYSIS OF LOW-THRESHOLD CURRENT-DENSITY 1.55-MU-M-STRAINED QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 32(2), 1996, pp. 222-226
Authors:
BOND AE
LIN CK
MACDOUGAL MH
DAPKUS PD
KAVIANI K
ADAMCZYK O
NOTTENBURG R
Citation: Ae. Bond et al., BACKGATING REDUCTION IN MESFETS USING AN ALAS NATIVE-OXIDE BUFFER LAYER, Electronics Letters, 32(24), 1996, pp. 2271-2273
Authors:
ZHAO HM
MACDOUGAL MH
DAPKUS PD
UPPAL K
CHENG Y
YANG GM
Citation: Hm. Zhao et al., SUBMILLIAMPERE THRESHOLD CURRENT INGAAS-GAAS-ALGAAS LASERS AND LASER ARRAYS GROWN ON NONPLANAR SUBSTRATES, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 196-202
Authors:
ZHAO HM
CHENG Y
MACDOUGAL MH
YANG GM
DAPKUS PD
Citation: Hm. Zhao et al., SUB-MILLIAMPERE SINGLE-QUANTUM-WELL INGAAS-GAAS-ALGAAS ADDRESSABLE LASER ARRAYS, IEEE photonics technology letters, 7(6), 1995, pp. 593-595
Authors:
MACDOUGAL MH
HUMMEL SG
DAPKUS PD
ZHAO HM
CHENG Y
Citation: Mh. Macdougal et al., EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES, IEEE photonics technology letters, 7(4), 1995, pp. 385-387
Authors:
MACDOUGAL MH
DAPKUS PD
PUDIKOV V
ZHAO HM
YANG GM
Citation: Mh. Macdougal et al., ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS, IEEE photonics technology letters, 7(3), 1995, pp. 229-231
Authors:
CHENG Y
YANG GM
MACDOUGAL MH
DAPKUS PD
Citation: Y. Cheng et al., LOW-THRESHOLD NATIVE-OXIDE CONFINED NARROW-STRIPE FOLDED-CAVITY SURFACE-EMITTING INGAAS-GAAS LASERS, IEEE photonics technology letters, 7(12), 1995, pp. 1391-1393
Authors:
YANG GM
MACDOUGAL MH
PUDIKOV V
DAPKUS PD
Citation: Gm. Yang et al., INFLUENCE OF MIRROR REFLECTIVITY ON LASER PERFORMANCE OF VERY-LOW-THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(11), 1995, pp. 1228-1230
Authors:
MATHUR A
DAPKUS PD
Citation: A. Mathur et Pd. Dapkus, 1.55-MU-UM DUAL-POLARIZATION LASERS IMPLEMENTED WITH COMPRESSIVE-STRAINED AND TENSILE-STRAINED QUANTUM-WELLS, IEEE photonics technology letters, 7(11), 1995, pp. 1243-1245
Authors:
CHENG Y
YANG GM
DAPKUS PD
Citation: Y. Cheng et al., FOLDED-CAVITY SURFACE-EMITTING INGAAS-GAAS LASERS WITH LOW-THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY, IEEE photonics technology letters, 7(10), 1995, pp. 1104-1106
Authors:
UPPAL K
MATHUR A
DAPKUS PD
Citation: K. Uppal et al., STRAIN EFFECTS ON INGAP-INGAASP-GAASP TENSILE-STRAINED QUANTUM-WELL LASERS, IEEE photonics technology letters, 7(10), 1995, pp. 1128-1130
Authors:
JOW MY
MAA BY
MORISHITA T
DAPKUS PD
Citation: My. Jow et al., GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(1), 1995, pp. 25-29
Authors:
YANG GM
MACDOUGAL MH
ZHAO H
DAPKUS PD
Citation: Gm. Yang et al., MICROCAVITY EFFECTS ON THE SPONTANEOUS EMISSION FROM INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 78(6), 1995, pp. 3605-3609
Authors:
FRATESCHI NC
DAPKUS PD
OU SS
YANG JJ
JANSEN M
Citation: Nc. Frateschi et al., ANALYSIS OF NONPLANAR WAVE-PROPAGATION THROUGH MULTILAYER BRAGG REFLECTORS FOR FOLDED CAVITY AND VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES, IEEE journal of quantum electronics, 31(4), 1995, pp. 627-635
Authors:
HUMMEL SG
MACDOUGAL MH
DAPKUS PD
Citation: Sg. Hummel et al., EXTREMELY WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING CHIRPED SEMICONDUCTOR OXIDE PAIRS/, Electronics Letters, 31(12), 1995, pp. 972-973
ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION
Authors:
YANG GM
MACDOUGAL MH
DAPKUS PD
Citation: Gm. Yang et al., ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION, Electronics Letters, 31(11), 1995, pp. 886-888
Authors:
DUBOVITSKY S
DAPKUS PD
MATHUR A
STEIER WH
Citation: S. Dubovitsky et al., WAVELENGTH CONVERSION IN A QUANTUM-WELL POLARIZATION-INSENSITIVE AMPLIFIER, IEEE photonics technology letters, 6(7), 1994, pp. 804-807
Authors:
SIALA S
ZHAO HM
GOVINDARAJAN M
NOTTENBURG RN
DAPKUS PD
Citation: S. Siala et al., HIGH-SPEED LARGE-SIGNAL DIGITAL MODULATION OF 3-TERMINAL LOW-THRESHOLD STRAINED INGAAS GAAS LASERS/, IEEE photonics technology letters, 6(6), 1994, pp. 687-689
Authors:
ZHAO HM
MACDOUGAL MH
FRATESCHI NC
SIALA S
DAPKUS PD
NOTTENBURG RN
Citation: Hm. Zhao et al., HIGH-EFFICIENCY INGAAS GAAS SINGLE-QUANTUM-WELL LASERS USING SINGLE-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, IEEE photonics technology letters, 6(4), 1994, pp. 468-470
Authors:
DUBOVITSKY S
MATHUR A
STEIER WH
DAPKUS PD
Citation: S. Dubovitsky et al., GAIN SATURATION PROPERTIES OF A POLARIZATION-INSENSITIVE SEMICONDUCTOR AMPLIFIER IMPLEMENTED WITH TENSILE AND COMPRESSIVE STRAIN QUANTUM-WELLS, IEEE photonics technology letters, 6(2), 1994, pp. 176-178
Authors:
COLEMAN JJ
DAPKUS PD
Citation: Jj. Coleman et Pd. Dapkus, SPECIAL ISSUE ON THE 1993 WORKSHOP ON ORGANOMETALLIC VAPOR-PHASE EPITAXY - FOREWORD, Journal of electronic materials, 23(2), 1994, pp. 67-67